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Tsu-Jae King Liu
Professor
Research Areas
Research Centers
Biography
Tsu-Jae King Liu received the B.S., M.S. and Ph.D. degrees in Electrical Engineering from Stanford University in 1984, 1986 and 1994, respectively. She joined the Xerox Palo Alto Research Center as a Member of Research Staff in 1992 to research and develop polycrystalline-silicon thin-film transistor technologies for high-performance flat-panel display and imaging applications. During her tenure with Xerox PARC, she served as a Consulting Assistant Professor of Electrical Engineering at Stanford University. In August 1996 she joined the faculty of the UC Berkeley with a Guest Faculty appointment at the Lawrence Berkeley National Laboratory. She is presently the Faculty Director of the UC Berkeley Microfabrication Laboratory. From 2003 to 2004, she served as Vice Chair for Graduate Matters in the EECS Department.
Her awards include the Ross M. Tucker AIME Electronics Materials Award (1992) for seminal work in polycrystalline silicon-germanium thin films, an NSF CAREER Award (1998) for research in thin-film transistor technology, the DARPA Significant Technical Achievement Award (2000) for development of the FinFET, the Electrical Engineering Award for Outstanding Teaching at UC Berkeley (2003), and the NAE Lillian M. Gilbreth Lectureship (2006). Her research activities are presently in nanoscale silicon devices and technology, and thin-film materials and devices for integrated microsystems and large-area electronics. She has authored or co-authored over 300 publications and holds over 60 U.S. patents. From July 2004 through June 2006 she was on industrial leave of absence from the university, as Senior Director of Engineering in the Advanced Technology Group of Synopsys, Inc. (Mountain View, CA).
Dr. Liu is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) and a past member of The Electrochemical Society (ECS), the Society for Information Display (SID), and the Materials Research Society (MRS).
Selected Publications
- S. Xiong, T. King Liu, and J. Bokor, "A comparison study of symmetric ultrathin-body double-gate devices with metal source/drain and doped source/drain," IEEE Trans. Electron Devices, vol. 52, no. 8, pp. 1859-1867, Aug. 2005.
- Z. Guo, S. Balasubramanian, R. Zlatanovici, T. King Liu, and B. Nikolic, "FinFET-based SRAM design," in Proc. ISLPED '05, Piscataway, NJ: IEEE, 2005, pp. 2-7.
- M. Eyoum and T. King Liu, "Low resistance silicon-germanium contact technology for modular integration of MEMS with electronics," J. Electrochemical Society, vol. 151, no. 3, pp. J21-J25, Feb. 2004.
- P. Xuan, M. She, B. Harteneck, A. Liddle, J. Bokor, and T. King Liu, "FinFET SONOS flash memory for embedded applications," in 2003 Intl. Electron Devices Meeting (IEDM '03). Technical Digest, Piscataway, NJ: IEEE Press, 2003, pp. 609-612.
- A. E. Franke, J. M. Heck, T. King Liu, and R. T. Howe, "Polycrystalline silicon-germanium films for integrated microsystems," J. Microelectromechanical Systems, vol. 12, no. 2, pp. 160-171, April 2003.
- M. She, H. Takeuchi, and T. King Liu, "Improved SONOS-type flash memory using HfO2 as trapping layer," in 19th IEEE Non-Volatile Semiconductor Memory Workshop Digest, Piscataway, NJ: IEEE, 2003, pp. 53-55.
- B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, Q. Xiang, T. King Liu, J. Bokor, C. Hu, M. Lin, and D. Kyser, "FinFET scaling to 10nm gate length," in 2002 IEEE Intl. Electron Devices Meeting Technical Digest, Piscataway, NJ: IEEE Press, 2002, pp. 251-254.
- B. Yu, L. Chang, S. Ahmed, H. Wang, S. Bell, C. Yang, C. Tabery, C. Ho, T. King Liu, J. Bokor, M. Lin, and D. Kyser, "FinFET scaling: Towards 10nm gate length," in IEDM '02 Technical Digest, Piscataway, NJ: IEEE Press, 2002, pp. 251-254.
- C. Kuo, T. King Liu, and C. Hu, "A capacitorless double-gate DRAM cell," IEEE Electron Device Letters, vol. 23, no. 6, pp. 345-347, June 2002.
- Y. Choi, T. King Liu, and C. Hu, "A spacer patterning technology for nanoscale CMOS," IEEE Trans. Electron Devices, vol. 49, no. 3, pp. 436-441, March 2002.
- Y. Yeo, V. Subramanian, J. Kedzierski, P. Xuan, T. King Liu, J. Bokor, and C. Hu, "Paul Rappaport Award for 2002: Design and fabrication of 50-nm thin-body p-MOSFETs with a SiGe heterostructure channel," IEEE Trans. Electron Devices, vol. 49, no. 2, pp. 279-286, Feb. 2002.
- D. Hisamoto, W. Lee, J. Kedzierski, H. Takeuchi, K. Asano, C. Kuo, E. Anderson, T. King Liu, J. Bokor, and C. Hu, "FinFET--A self-aligned double-gate MOSFET scalable to 20 nm," IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320-2325, Dec. 2000.
- S. D. Theiss, P. G. Carey, P. M. Smith, P. Wickboldt, T. W. Sigmon, Y. J. Tung, and T. King Liu, "Polysilicon thin film transistors fabricated at 100°C on a flexible plastic substrate," in International Electron Devices Meeting 1998 Technical Digest, Piscataway, NJ: IEEE, 1998, pp. 257-260.
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