Hei Kam

PhD Candidate

Device.bmp

University of California, Berkeley
Department of Electrical Engineering and Computer Sciences

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Curriculum Vitae

“I learned very early the difference between knowing the name of something and knowing something.”

- Richard Feynman.

 

Hei Kam is currently pursuing his PhD degree under the supervision of Professor Tsu-Jae King-Liu and Professor Elad Alon. Hei Kam's research focuses on MOSFET replacements devices for energy-efficient digital integrated circuits. His interests include sub-60mV/dec logic devices, micro-electromechanical systems (MEMS) and low temperature fabrication process.

Project Areas:

* Nano-Electro-Mechanical Integrated Circuit Technology

In this project, we aim at designing nanoscale electromechanical devices and circuits for ultra-low-energy electronics applications

Publications

  1. F. Chen, M. Spencer, R. Nathanael, C. Wang, H. Fariborzi, A. Gupta, H. Kam, V. Pott, J. Jeon, T.-J. King Liu, D. Markovic, V. Stojanovic, E. Alon, “Demonstration of Integrated Electro-Mechanical Switch Circuits for VLSI Applications,” to be presented at ISSCC 2010
  2. D. Lee, V. Pott, H. Kam, R. Nathanael and T.-J. King Liu, “AFM characterization of adhesion force in micro-relays,” to be presented at MEMS 2010
  3. H. Kam, V. Pott, R. Nathanael, J. Jeon, E. Alon, and T.-J. King Liu, “Design and reliability of a micro-relay technology for zero-standby-power digital logic applications,” to be presented at the 2009 IEEE International Electron Devices Meeting.
  4. R. Nathanael, V. Pott, H. Kam, J. Jeon, and T.-J. King Liu, “4-terminal relay technology for complementary logic,” to be presented at the 2009 IEEE International Electron Devices Meeting.
  5. V. Pott, H. Kam, J. Jeon, and T.-J. King Liu, “Improvement in mechanical contact reliability with ALD TiO2 coating,” to be presented at the American Vacuum Society 56th International Symposium (San Jose, CA, USA), November 2009.
  6. F. Chen, H. Kam, D. Markovic, T.-J. King Liu, V. Stojanovic, and E. Alon, "Integrated Circuit Design with NEM Relays," IEEE International Conference on Computer-Aided Design, Nov. 2008.
  7. W. Y. Choi, H. Kam, J. Lai, D. Lee and T.-J. King Liu “Compact Nano-Electro-Mechanical Non-Volatile Memory (NEMory) for 3D Integration”, in 2007 International Electron Device Meeting.

 

* Circuit Driven Requirements for CMOS-replacement Devices

Alternative logic devices with subthreshold slope (SS) less than 60mV/dec, like the impact-ionization MOS (IMOS), the tunneling transistor (TFET), the ferroelectric FETs (FeFET), the feedback FET, the nano-electromechanical FET (NEMFET) and nano-relay have been proposed to replace conventional MOSFET. In this project, we aim at developing simple guidelines to assess the promise of these MOSFET replacement devices.

Publications

 

1.    Hei Kam, Elad Alon, Tsu-Jae King Liu and Mark Horowitz, “Circuit Driven Requirements for CMOS-replacement Devices”, in 2008 International Electron Device Meeting.

2.    Sung Hwan Kim, Hei Kam, Chenming Hu and Tsu-Jae King Liu, “Germanium-Source Tunnel Field Effect Transistors with Record High ION/IOFF”, accepted for 2009 VLSI Symposium on VLSI Technology.

 

* Nano-Electro-Mechanical Field Effect Transistor (NEMFET)

The subthreshold slope of the MOSFET is limited by the fundamental kBT/q thermal limit. In this work, we utilize the motion of the suspended-gate to improve the on-to-off transition of the MOSFET.

Publications

 

1.    Hei Kam, Donovan Lee, Roger Howe and Tsu-Jae King-Liu, “A New Nano-Electro-Mechanical Field Effect Transistor (NEMFET) design for ultra-low-power electronics”, in 2005 International Electron Device Meeting.

2.    Hei Kam, Tsu-Jae King-Liu, “Pull-in and Release Voltage design in the Nano-Electro-Mechanical Field Effect Transistor (NEMFET)”, manuscript submitted to TED.