As packing density increases in the fabrication of semiconductors, the fine control of dry etching is strongly required for transferring the fine patterns from weak and thin photo resist. The dry etching is well known to be controlled by ion energy, ion flux, radical flux, and radical species. These control parameters are strongly related to the electron temperature, electron density, and sheath potential of the bulk plasma. In our research, independent control of electron temperature, electron density, and sheath potential of the bulk plasma will be demonstrated through simulations of a circuit model and a global model for the CW and pulse modulated dual frequency capacitively coupled plasma (CCP). This research is focused on the roles of frequency, electrode gap, shape of pulse, chemistry, etc.