The Effect of Surface Nano-Textures on Silicon Wafer Bonding*

Eric Liu
(Professor Nathan W. Cheung)
(NSF) DMI-0088145 and (UC-SMART) SM-97-01

Wafer bonding is an enabling technology for materials integration in microelectronics, optoelectronics, and MEM systems [1]. Although most published work focuses on forming a permanent bond between two wafers, a growing aspect of bonding involves the use of temporary or controlled bonding, so called "post-it" style bonding. Surface nano-texturing could be a way to engineer the bond to a prescribed strength. Recently, we described the surface textures produced by low energy Ar ion sputtering under various experimental conditions. An important feature is that nanometer scale ripples can be formed, with a wave vector either parallel or perpendicular to the projected direction of ion beam. The surface topography is characterized by atomic force microscopy (AFM), and topography parameters are extracted as functions of incidence angle, ion energy, and dose .In 2003, we will focus on the correlation of the delamination energy (measured by the crack opening method) with the topography parameters.

Q. Y. Tong and U. Goesele, Semiconductor Wafer Bonding: Science and Technology, John Wiley and Sons, Inc., 1999.

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