Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

   

Research Projects

Electrically Detected Magnetic Resonance of Neutral Antimony Donors in Silicon FETs

Cheuk Chi Lo and Jeffrey Bokor

National Science Foundation and Western Instituite of Nanoelectronics

Spin-state read-out for silicon-based quantum computers can be achieved by using field-effect transistor (FET) architectures, with donor atom qubits positioned in the channel of the FET. The donor electron spin states can be detected by exploiting spin-dependent scattering in an electron spin-resonance (ESR) setting. Accumulation mode field-effect transistors have been fabricated for this purpose, and electrically detected magnetic resonance (EDMR) signals have been detected for micron-scale devices. FinFETs built on isotopically enriched 28-Si SOI wafers have also be fabricated and measurements are in progress. [In collaboration with Dr. Thomas Schenkel (LBL) and Prof. Steve Lyon (Princeton University)]

Figure 1
Figure 1: An accumulation-mode FinFET with 121-Sb channel implants built on isotopically enriched 28-Si SOI.