Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

   

2010 Research Summary

Tunneling Field Effect Transistors

View Current Project Information

Peter Matheu1, Reinaldo Vega, Alex Guo Li, Chenming Hu and Tsu-Jae King Liu

Defense Advanced Research Projects Agency

CMOS power supply voltage scaling has slowed in recent years due to the non-scalability of the MOSFET threshold voltage. Transistor designs which utilize band-to-band tunneling as the carrier injection mechanism should in theory allow for reduced threshold voltage (hence lower supply voltage) for the same off-state leakage current as a MOSFET. The overall goal of this research is to investigate methods for achieving tunnel transistors (TFETs) with steeper switching characteristics than can be achieved by a MOSFET, for low-voltage electronics applications. Semiconductor device simulations calibrated to experimental results are used to guide device design optimization.

1Applied Science & Technology Graduate Group