Electrically Detected Magnetic Resonance of Neutral Antimony Donors in Silicon FETs
Cheuk Chi Lo and Jeffrey Bokor
National Science Foundation and Western Instituite of Nanoelectronics
Spin-state read-out for silicon-based quantum computers can be achieved by using field-effect transistor (FET) architectures, with donor atom qubits positioned in the channel of the FET. The donor electron spin states can be detected by exploiting spin-dependent scattering in an electron spin-resonance (ESR) setting. Accumulation mode field-effect transistors have been fabricated for this purpose, and electrically detected magnetic resonance (EDMR) signals have been detected for micron-scale devices. FinFETs built on isotopically enriched 28-Si SOI wafers have also been fabricated and measurements are in progress.
This work is in collaboration with Dr. Thomas Schenkel (LBL) and Prof. Steve Lyon (Princeton University).
Figure 1: An accumulation-mode FinFET with 121-Sb channel implants built on isotopically enriched 28-Si SOI