Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences


UC Berkeley


2009 Research Summary

Post-Decomposition Assessment of Double Patterning Layout

View Current Project Information

Juliet Alison Rubinstein and Andrew R. Neureuther

FLCC and Semiconductor Research Corporation Grant 1443

Pattern matching methods are examined as fast-CAD tools for full-chip across process window examination of post-decomposition double patterning layouts. The goal is to demonstrate the ability to anticipate lithographic weakness due to many sources. This includes the decomposition strategy itself, OPC of individual sub-layers, focus-exposure process window and illumination. This study is an intermediate step to using fast-CAD assessment tools within pattern decomposition algorithms to guide decisions based on lateral influences instead of rules. Pattern decomposition for double patterning is a largely heuristic-based procedure, and this project investigates a fast method to determine the quality of the split.

This project examines split layouts for lithographic weakness using the fast-CAD technique of pattern matching. This study uses examples from the literature such as those presented by Drapeau [1], and are examined under annular illumination. Match factors are introduced for various image quality metrics and sensitivities to lithography parameters. First-cut accurate linear and quadratic edge placement error models are then applied. The match factors and edge placement models are extensions for those introduced by McIntyre [2] and Holwill [3]. Once expected hot-spots are found, a local image simulation is carried out to compare the first-cut edge placement estimate with that from image simulation.

M. Drapeau, V. Wiaux, E. Hendrickx, S. Verhaegen, and T. Macida, "Double Patterning Design Split Implementation and Validation for the 32 nm Node," Proceedings of the SPIE, Vol. 6521, 2007, pp. 652109.
G. Mcintyre, J. Holwill, and A. R. Neureuther, "Screening Layouts for High-Numerical Aperture and Polarization Effects Using Pattern Matching," Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 23, Issue 6, November 2005, pp. 2646-2652.
J. Holwill, G. Mcintyre, W. Poppe, and A. R. Neureuther, "Layout 'Hot Spots' for Advancing Optical Technologies," Proceedings of the SPIE, Vol. 6154, 2006, pp. 1212-1220.