Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

   

2008 Research Summary

3-Dimensional Simulation of Line Edge Roughness and Random Dopant Fluctuation Effects in Sub-45 nm MOSFETs

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Xin Sun and Tsu-Jae King Liu

For ultra-scaled MOSFETs, line edge roughness (LER) and random dopant fluctuation are important sources of variation in device performance, thus affecting the parametric yield. LER and random dopant effects in sub-45 nm MOSFETs are investigated via Sentaurus 3-dimensional process and device simulations [1]. Different channel doping and lithography methods are discussed and compared to generate optimized nanoscale CMOS device design.

[1]
Sentaurus User's Manual, Vol. 2005.10, Synopsys, Inc.