3-Dimensional Simulation of Line Edge Roughness and Random Dopant Fluctuation Effects in Sub-45 nm MOSFETs
Xin Sun and Tsu-Jae King Liu
For ultra-scaled MOSFETs, line edge roughness (LER) and random dopant fluctuation are important sources of variation in device performance, thus affecting the parametric yield. LER and random dopant effects in sub-45 nm MOSFETs are investigated via Sentaurus 3-dimensional process and device simulations . Different channel doping and lithography methods are discussed and compared to generate optimized nanoscale CMOS device design.
- Sentaurus User's Manual, Vol. 2005.10, Synopsys, Inc.