Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

4H-Silicon Carbide PN Diode for Harsh Environment Temperature Sensing Applications

Nuo Zhang

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2014-103
May 16, 2014

http://www.eecs.berkeley.edu/Pubs/TechRpts/2014/EECS-2014-103.pdf

Temperature sensing under harsh environments is important to various industrial applications. Among different types of temperature sensors, semiconductor diode sensor has the advantages of high sensitivity and compatibility with integrated circuits. In this work, a temperature sensor based on 4H-SiC pn diode is theoretically and experimentally investigated. The device is capable of stable operation in a temperature range from 20 °C up to 600 °C. In the forward biased region, the forward voltage of the 4H-SiC pn diode shows linear dependence on temperature at a constant current. This dependence is utilized to sense temperature variations and the proposed device achieves a sensitivity of 3.5 mV/°C. These results indicate that an integrated circuit compatible temperature sensor based on 4H-SiC pn diode is a promising technology for harsh environment sensing applications.

Advisor: Albert Pisano


BibTeX citation:

@mastersthesis{Zhang:EECS-2014-103,
    Author = {Zhang, Nuo},
    Title = {4H-Silicon Carbide PN Diode for Harsh Environment Temperature Sensing Applications},
    School = {EECS Department, University of California, Berkeley},
    Year = {2014},
    Month = {May},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2014/EECS-2014-103.html},
    Number = {UCB/EECS-2014-103},
    Abstract = {Temperature sensing under harsh environments is important to various industrial applications. Among different types of temperature sensors, semiconductor diode sensor has the advantages of high sensitivity and compatibility with integrated circuits. In this work, a temperature sensor based on 4H-SiC pn diode is theoretically and experimentally investigated. The device is capable of stable operation in a temperature range from 20 °C up to 600 °C. In the forward biased region, the forward voltage of the 4H-SiC pn diode shows linear dependence on temperature at a constant current. This dependence is utilized to sense temperature variations and the proposed device achieves a sensitivity of 3.5 mV/°C. These results indicate that an integrated circuit compatible temperature sensor based on 4H-SiC pn diode is a promising technology for harsh environment sensing applications.}
}

EndNote citation:

%0 Thesis
%A Zhang, Nuo
%T 4H-Silicon Carbide PN Diode for Harsh Environment Temperature Sensing Applications
%I EECS Department, University of California, Berkeley
%D 2014
%8 May 16
%@ UCB/EECS-2014-103
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2014/EECS-2014-103.html
%F Zhang:EECS-2014-103