Experimental and Simulation Study of Resistive Switches for Memory Applications

Feng Pan

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2013-38
May 1, 2013

http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.pdf

Advisor: Vivek Subramanian


BibTeX citation:

@phdthesis{Pan:EECS-2013-38,
    Author = {Pan, Feng},
    Title = {Experimental and Simulation Study of Resistive Switches for Memory Applications},
    School = {EECS Department, University of California, Berkeley},
    Year = {2013},
    Month = {May},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.html},
    Number = {UCB/EECS-2013-38}
}

EndNote citation:

%0 Thesis
%A Pan, Feng
%T Experimental and Simulation Study of Resistive Switches for Memory Applications
%I EECS Department, University of California, Berkeley
%D 2013
%8 May 1
%@ UCB/EECS-2013-38
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-38.html
%F Pan:EECS-2013-38