Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor

Sapan Agarwal, James Teherani, Judy Hoyt, Dimitri Antoniadis and Eli Yablonovitch

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2013-249
December 31, 2013

http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.pdf

The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.


BibTeX citation:

@techreport{Agarwal:EECS-2013-249,
    Author = {Agarwal, Sapan and Teherani, James and Hoyt, Judy and Antoniadis, Dimitri and Yablonovitch, Eli},
    Title = {Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {2013},
    Month = {Dec},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html},
    Number = {UCB/EECS-2013-249},
    Abstract = {The electron-hole (EH) Bilayer Tunneling Field-Effect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for a given on-state conductance, Si, Ge, and InAs all have similar gate efficiency, around 40-50%. Unlike Si & Ge, only the InAs case allows a manageable work function difference for EH Bilayer Transistor operation.}
}

EndNote citation:

%0 Report
%A Agarwal, Sapan
%A Teherani, James
%A Hoyt, Judy
%A Antoniadis, Dimitri
%A Yablonovitch, Eli
%T Engineering the Electron-Hole Bilayer Tunneling Field-Effect Transistor
%I EECS Department, University of California, Berkeley
%D 2013
%8 December 31
%@ UCB/EECS-2013-249
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2013/EECS-2013-249.html
%F Agarwal:EECS-2013-249