Experimental and Simulation Study of Resistive Switches for Memory Applications

Feng Pan

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2012-192
September 4, 2012

http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.pdf


BibTeX citation:

@techreport{Pan:EECS-2012-192,
    Author = {Pan, Feng},
    Title = {Experimental and Simulation Study of Resistive Switches for Memory Applications},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {2012},
    Month = {Sep},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html},
    Number = {UCB/EECS-2012-192}
}

EndNote citation:

%0 Report
%A Pan, Feng
%T Experimental and Simulation Study of Resistive Switches for Memory Applications
%I EECS Department, University of California, Berkeley
%D 2012
%8 September 4
%@ UCB/EECS-2012-192
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html
%F Pan:EECS-2012-192