Experimental and Simulation Study of Resistive Switches for Memory Applications
Feng Pan
EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2012-192
September 4, 2012
http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.pdf
BibTeX citation:
@techreport{Pan:EECS-2012-192,
Author = {Pan, Feng},
Title = {Experimental and Simulation Study of Resistive Switches for Memory Applications},
Institution = {EECS Department, University of California, Berkeley},
Year = {2012},
Month = {Sep},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html},
Number = {UCB/EECS-2012-192}
}
EndNote citation:
%0 Report %A Pan, Feng %T Experimental and Simulation Study of Resistive Switches for Memory Applications %I EECS Department, University of California, Berkeley %D 2012 %8 September 4 %@ UCB/EECS-2012-192 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-192.html %F Pan:EECS-2012-192