Ultra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects
Michael Roe
EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2012-123
May 27, 2012
http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-123.pdf
Advisor: Eli Yablonovitch
BibTeX citation:
@mastersthesis{Roe:EECS-2012-123,
Author = {Roe, Michael},
Title = {Ultra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects},
School = {EECS Department, University of California, Berkeley},
Year = {2012},
Month = {May},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-123.html},
Number = {UCB/EECS-2012-123}
}
EndNote citation:
%0 Thesis %A Roe, Michael %T Ultra-sensitive SiGe Bipolar Phototransistors for Optical Interconnects %I EECS Department, University of California, Berkeley %D 2012 %8 May 27 %@ UCB/EECS-2012-123 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/2012/EECS-2012-123.html %F Roe:EECS-2012-123
