Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

Solution Processed Silver Sulfide Thin Films for Filament Memory Applications

Shong Yin

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2010-166
December 17, 2010

http://www.eecs.berkeley.edu/Pubs/TechRpts/2010/EECS-2010-166.pdf

Filament Memories based on resistive switching have been attracting attention in recent years as a potential replacement for flash memory in CMOS technology and as a potential candidate memory for low-cost, large-area electronics. These memories operate at low voltages with fast switching speeds. These devices are based on ionic conduction through an electrolyte layer and differ fundamentally in operation from conventional flash memory, which is based on the field effect transistor. To facilitate development of this technology, effects of film structure on ionic and electronic conducting properties and the filament formation processes must be studied. In this work, silver sulfide, a mixed ionic-electronic conductor, is used as a model material for studying the solution processing of filament memories, and to study the impact of film structure on conducting and switching properties. Three different solution processing methods are investigated for depositing silver sulfide: sulfidation of elemental silver films, and sintering of two types of silver sulfide nanoparticles. Effects of nanoparticle sintering conditions on electrolyte structured and mixed conducting properties are investigated by a combination of X-ray diffraction, electrical impedance spectroscopy and thermo-gravimetric analysis. Impact of forming voltage and time on filament morphology is examined to provide an overall view of the impact of electrical and material parameters on device operation.

Advisor: Vivek Subramanian


BibTeX citation:

@phdthesis{Yin:EECS-2010-166,
    Author = {Yin, Shong},
    Editor = {Subramanian, Vivek},
    Title = {Solution Processed Silver Sulfide Thin Films for Filament Memory Applications},
    School = {EECS Department, University of California, Berkeley},
    Year = {2010},
    Month = {Dec},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2010/EECS-2010-166.html},
    Number = {UCB/EECS-2010-166},
    Abstract = {Filament Memories based on resistive switching have been attracting attention in recent years as a potential replacement for flash memory in CMOS technology and as a potential candidate memory for low-cost, large-area electronics.  These memories operate at low voltages with fast switching speeds.  These devices are based on ionic conduction through an electrolyte layer and differ fundamentally in operation from conventional flash memory, which is based on the field effect transistor.  To facilitate development of this technology, effects of film structure on ionic and electronic conducting properties and the filament formation processes must be studied.

In this work, silver sulfide, a mixed ionic-electronic conductor, is used as a model material for studying the solution processing of filament memories, and to study the impact of film structure on conducting and switching properties.  Three different solution processing methods are investigated for depositing silver sulfide: sulfidation of elemental silver films, and sintering of two types of silver sulfide nanoparticles.  Effects of nanoparticle sintering conditions on electrolyte structured and mixed conducting properties are investigated by a combination of X-ray diffraction, electrical impedance spectroscopy and thermo-gravimetric analysis.  Impact of forming voltage and time on filament morphology is examined to provide an overall view of the impact of electrical and material parameters on device operation.}
}

EndNote citation:

%0 Thesis
%A Yin, Shong
%E Subramanian, Vivek
%T Solution Processed Silver Sulfide Thin Films for Filament Memory Applications
%I EECS Department, University of California, Berkeley
%D 2010
%8 December 17
%@ UCB/EECS-2010-166
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2010/EECS-2010-166.html
%F Yin:EECS-2010-166