Daniel C Huang

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2009-74

May 20, 2009

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-74.pdf

Pentacene has one of the highest carrier mobility among organic semiconductors. Unfortunately, due to its tight packing density, giving it its high mobility, pentacene does not readily dissolve in common solvents, making it difficult to incorporate into printed electronics. Solution processable pentacene through a precursor route is a promising method of incorporating pentacene into printed electronics. Here, the thin film formation of pentacene through a precursor route is detailed. Specifically, the thin film formation of pentacene on oxide is compared with thin film formation of pentacene on oxide through evaporation methods. Then thin film formation of pentacene through the precursor is detailed and compared on different substrates important to printed electronics. Finally, the performance of pentacene thin film transistors is tested by using different heat treatments for processing the pentacene precursor. The heat treatments were based on the thin film studies of pentacene thin film formation and seek to optimize pentacene TFT performance.

Advisors: Vivek Subramanian

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BibTeX citation:

@phdthesis{Huang:EECS-2009-74,
    Author= {Huang, Daniel C},
    Title= {Thin Film Formation of a Solution Processed Pentacene},
    School= {EECS Department, University of California, Berkeley},
    Year= {2009},
    Month= {May},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-74.html},
    Number= {UCB/EECS-2009-74},
    Abstract= {Pentacene has one of the highest carrier mobility among organic semiconductors.  Unfortunately, due to its tight packing density, giving it its high mobility, pentacene does not readily dissolve in common solvents, making it difficult to incorporate into printed electronics.  Solution processable pentacene through a precursor route is a promising method of incorporating pentacene into printed electronics.  Here, the thin film formation of pentacene through a precursor route is detailed.  Specifically, the thin film formation of pentacene on oxide is compared with thin film formation of pentacene on oxide through evaporation methods.   Then thin film formation of pentacene through the precursor is detailed and compared on different substrates important to printed electronics.  Finally, the performance of pentacene thin film transistors is tested by using different heat treatments for processing the pentacene precursor.  The heat treatments were based on the thin film studies of pentacene thin film formation and seek to optimize pentacene TFT performance.},
}

EndNote citation:

%0 Thesis
%A Huang, Daniel C 
%T Thin Film Formation of a Solution Processed Pentacene
%I EECS Department, University of California, Berkeley
%D 2009
%8 May 20
%@ UCB/EECS-2009-74
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-74.html
%F Huang:EECS-2009-74