Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

A Statistical Flicker Noise Analytical Model in Scaled Bulk MOSFETs

Tianjiao Zhang

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2009-18
January 27, 2009

http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-18.pdf

The low frequency 1/f noise in CMOS impacts the performance of analog and RF circuits such as high performance operational ampliers, low IF mixers and VCO phase noise. As the transistor area is scaled down, low frequency noise is Lorenztian-like and it exhibits more device-to-device variations. The variability in flicker noise is becoming increasingly important for circuits using very small transistors. It is thus necessary to develop a statistical compact model for flicker noise to enable a robust design of analog circuits. In this report, such a model is developed to describe statistical flicker noise behavior. The Statistical Flicker Noise Analytical Model is developed which includes analytical mean and standard deviation with a new model parameter. The model will predict noise magnitudes at given frequencies and yield percentiles.

Advisor: Chenming Hu


BibTeX citation:

@mastersthesis{Zhang:EECS-2009-18,
    Author = {Zhang, Tianjiao},
    Title = {A Statistical Flicker Noise Analytical Model in Scaled Bulk MOSFETs},
    School = {EECS Department, University of California, Berkeley},
    Year = {2009},
    Month = {Jan},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-18.html},
    Number = {UCB/EECS-2009-18},
    Abstract = {The low frequency 1/f noise in CMOS impacts the performance of analog and RF circuits such as high performance operational ampliers, low IF mixers and VCO phase noise.  As the transistor area is scaled down, low frequency noise is Lorenztian-like and it exhibits more device-to-device variations.  The variability in flicker noise is becoming increasingly important for circuits using very small transistors.  It is thus necessary to develop a statistical compact model for flicker noise to enable a robust design of analog circuits.  In this report, such a model is developed to describe statistical flicker noise behavior.  The Statistical Flicker Noise Analytical Model is developed which includes analytical mean and standard deviation with a new model parameter.    The model will predict noise magnitudes at given frequencies and yield percentiles.}
}

EndNote citation:

%0 Thesis
%A Zhang, Tianjiao
%T A Statistical Flicker Noise Analytical Model in Scaled Bulk MOSFETs
%I EECS Department, University of California, Berkeley
%D 2009
%8 January 27
%@ UCB/EECS-2009-18
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-18.html
%F Zhang:EECS-2009-18