Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII.

Laszlo Petho

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2009-163
December 7, 2009

http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.pdf

This report details the fifth six-inch baseline run, CMOS192, fabricated in the UC Berkeley Microlab. A moderately complex 0.35 µm twin-well process, developed and fine-tuned in earlier runs, was used. Different research circuits were placed in the drop-in area: ring oscillators, different memory circuits, a MEMS design, features for carbon nanotube integration and nanowire-based molecular sensors.


BibTeX citation:

@techreport{Petho:EECS-2009-163,
    Author = {Petho, Laszlo},
    Title = {0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII.},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {2009},
    Month = {Dec},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.html},
    Number = {UCB/EECS-2009-163},
    Abstract = {This report details the fifth six-inch baseline run, CMOS192, fabricated in the UC Berkeley Microlab. A moderately complex 0.35 µm twin-well process, developed and fine-tuned in earlier runs, was used. Different research circuits were placed in the drop-in area: ring oscillators, different memory circuits, a MEMS design, features for carbon nanotube integration and nanowire-based molecular sensors.}
}

EndNote citation:

%0 Report
%A Petho, Laszlo
%T 0.35 µm CMOS PROCESS ON SIX-INCH WAFERS, Baseline Report VII.
%I EECS Department, University of California, Berkeley
%D 2009
%8 December 7
%@ UCB/EECS-2009-163
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2009/EECS-2009-163.html
%F Petho:EECS-2009-163