Forrest G. Sedgwick

EECS Department, University of California, Berkeley

Technical Report No. UCB/EECS-2008-15

February 14, 2008

http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.pdf

Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.

Advisors: Constance Chang-Hasnain

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BibTeX citation:

@phdthesis{Sedgwick:EECS-2008-15,
    Author= {Sedgwick, Forrest G.},
    Title= {Slow and Fast Light in Semiconductors},
    School= {EECS Department, University of California, Berkeley},
    Year= {2008},
    Month= {Feb},
    Url= {http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html},
    Number= {UCB/EECS-2008-15},
    Abstract= {Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.},
}

EndNote citation:

%0 Thesis
%A Sedgwick, Forrest G. 
%T Slow and Fast Light in Semiconductors
%I EECS Department, University of California, Berkeley
%D 2008
%8 February 14
%@ UCB/EECS-2008-15
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html
%F Sedgwick:EECS-2008-15