Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

Slow and Fast Light in Semiconductors

Forrest G. Sedgwick

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2008-15
February 14, 2008

http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.pdf

Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.

Advisor: Constance Chang-Hasnain


BibTeX citation:

@phdthesis{Sedgwick:EECS-2008-15,
    Author = {Sedgwick, Forrest G.},
    Title = {Slow and Fast Light in Semiconductors},
    School = {EECS Department, University of California, Berkeley},
    Year = {2008},
    Month = {Feb},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html},
    Number = {UCB/EECS-2008-15},
    Abstract = {Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.}
}

EndNote citation:

%0 Thesis
%A Sedgwick, Forrest G.
%T Slow and Fast Light in Semiconductors
%I EECS Department, University of California, Berkeley
%D 2008
%8 February 14
%@ UCB/EECS-2008-15
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html
%F Sedgwick:EECS-2008-15