Slow and Fast Light in Semiconductors
Forrest G. Sedgwick
EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2008-15
February 14, 2008
http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.pdf
Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.
Advisor: Constance Chang-Hasnain
BibTeX citation:
@phdthesis{Sedgwick:EECS-2008-15,
Author = {Sedgwick, Forrest G.},
Title = {Slow and Fast Light in Semiconductors},
School = {EECS Department, University of California, Berkeley},
Year = {2008},
Month = {Feb},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html},
Number = {UCB/EECS-2008-15},
Abstract = {Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.}
}
EndNote citation:
%0 Thesis %A Sedgwick, Forrest G. %T Slow and Fast Light in Semiconductors %I EECS Department, University of California, Berkeley %D 2008 %8 February 14 %@ UCB/EECS-2008-15 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html %F Sedgwick:EECS-2008-15