Slow and Fast Light in Semiconductors

Forrest G. Sedgwick

EECS Department
University of California, Berkeley
Technical Report No. UCB/EECS-2008-15
February 14, 2008

http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.pdf

Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.

Advisor: Constance Chang-Hasnain


BibTeX citation:

@phdthesis{Sedgwick:EECS-2008-15,
    Author = {Sedgwick, Forrest G.},
    Title = {Slow and Fast Light in Semiconductors},
    School = {EECS Department, University of California, Berkeley},
    Year = {2008},
    Month = {Feb},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html},
    Number = {UCB/EECS-2008-15},
    Abstract = {Theoretical treatments and experimental results demonstrating slow and fast light in semiconductors are presented. Three different physical mechanisms are examined: electromagnetically induced transparency, coherent population oscillations, and intraband effects, e.g. carrier heating and spectral hole burning.}
}

EndNote citation:

%0 Thesis
%A Sedgwick, Forrest G.
%T Slow and Fast Light in Semiconductors
%I EECS Department, University of California, Berkeley
%D 2008
%8 February 14
%@ UCB/EECS-2008-15
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/2008/EECS-2008-15.html
%F Sedgwick:EECS-2008-15