BSIM3v3.2.1 MOSFET Model Users' Manual
W. Liu, X. Jin, J. Chen, M-C. Jeng, Z. Liu, Y. Cheng, K. Chen, M. Chan, K. Hui, J. Huang, R. Tu, P.K. Ko and Chenming Hu
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M99/19
1999
http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/ERL-99-19.pdf
BSIM3v3 is the latest industry-standard MOSFET model for deep-submicron digital and analog circuit designs from the BSIM Group at the University of California at Berkeley. BSIM3v3.2.1 is based on its predecessor, BSIM3v3.2, with the following changes:
* A bias-dependent Vfb is kept in the capacitance models, capMod=l and 2.
* A version number checking is added; a warning message will be given if user-specified version number is different from its default value of 3.2.1.
* Known bugs are fixed.
BibTeX citation:
@techreport{Liu:M99/19,
Author = {W. Liu and X. Jin and J. Chen and M-C. Jeng and Z. Liu and Y. Cheng and K. Chen and M. Chan and K. Hui and J. Huang and R. Tu and P.K. Ko and Chenming Hu},
Title = {BSIM3v3.2.1 MOSFET Model Users' Manual},
Institution = {EECS Department, University of California, Berkeley},
Year = {1999},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/3629.html},
Number = {UCB/ERL M99/19}
}
EndNote citation:
%0 Report %A Liu, W. %A Jin, X. %A Chen, J. %A Jeng, M-C. %A Liu, Z. %A Cheng, Y. %A Chen, K. %A Chan, M. %A Hui, K. %A Huang, J. %A Tu, R. %A Ko, P.K. %A Hu, Chenming %T BSIM3v3.2.1 MOSFET Model Users' Manual %I EECS Department, University of California, Berkeley %D 1999 %@ UCB/ERL M99/19 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/3629.html %F Liu:M99/19