BSIM3v3.2.2 MOSFET Model Users' Manual
W. Liu, X. Jin, J. Chen, M-C. Jeng, Z. Liu, Y. Cheng, K. Chen, M. Chan, K. Hui, J. Huang, R. Tu, P.K. Ko and Chenming Hu
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M99/18
1999
http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/ERL-99-18.pdf
BSIM3v3 is the latest industry-standard MOSFET model for deep-submicron digital and analog circuit designs from the BSIM Group at the University of California at Berkeley. BSIM3v3.2.2 is based on its predecessor, BSIM3v3.2, with the following changes: * A bias-independent Vfb is used in the capacitance models, capMod=l and 2 to eliminate small negative capacitance of C(gs) and C(gd) in the accumulation-depletion regions. * A version number checking is added; a warning message will be given if user-specified version number is different from its default value of 3.2.2. * Known bugs are fixed.
BibTeX citation:
@techreport{Liu:M99/18,
Author = {Liu, W. and Jin, X. and Chen, J. and Jeng, M-C. and Liu, Z. and Cheng, Y. and Chen, K. and Chan, M. and Hui, K. and Huang, J. and Tu, R. and Ko, P.K. and Hu, Chenming},
Title = {BSIM3v3.2.2 MOSFET Model Users' Manual},
Institution = {EECS Department, University of California, Berkeley},
Year = {1999},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/3616.html},
Number = {UCB/ERL M99/18},
Abstract = {BSIM3v3 is the latest industry-standard MOSFET model for
deep-submicron digital and analog circuit designs from the BSIM
Group at the University of California at Berkeley. BSIM3v3.2.2 is
based on its predecessor, BSIM3v3.2, with the following changes:
* A bias-independent Vfb is used in the capacitance models,
capMod=l and 2 to eliminate small negative capacitance of
C(gs) and C(gd) in the accumulation-depletion regions.
* A version number checking is added; a warning message will
be given if user-specified version number is different from
its default value of 3.2.2.
* Known bugs are fixed.}
}
EndNote citation:
%0 Report %A Liu, W. %A Jin, X. %A Chen, J. %A Jeng, M-C. %A Liu, Z. %A Cheng, Y. %A Chen, K. %A Chan, M. %A Hui, K. %A Huang, J. %A Tu, R. %A Ko, P.K. %A Hu, Chenming %T BSIM3v3.2.2 MOSFET Model Users' Manual %I EECS Department, University of California, Berkeley %D 1999 %@ UCB/ERL M99/18 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1999/3616.html %F Liu:M99/18