Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2

W. Liu, X. Jin, Y-C. King and Chenming Hu

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M98/47
1998


BibTeX citation:

@techreport{Liu:M98/47,
    Author = {Liu, W. and Jin, X. and King, Y-C. and Hu, Chenming},
    Title = {An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1998},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html},
    Number = {UCB/ERL M98/47}
}

EndNote citation:

%0 Report
%A Liu, W.
%A Jin, X.
%A King, Y-C.
%A Hu, Chenming
%T An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2
%I EECS Department, University of California, Berkeley
%D 1998
%@ UCB/ERL M98/47
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html
%F Liu:M98/47