An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2
W. Liu, X. Jin, Y-C. King and Chenming Hu
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M98/47
1998
BibTeX citation:
@techreport{Liu:M98/47,
Author = {Liu, W. and Jin, X. and King, Y-C. and Hu, Chenming},
Title = {An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2},
Institution = {EECS Department, University of California, Berkeley},
Year = {1998},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html},
Number = {UCB/ERL M98/47}
}
EndNote citation:
%0 Report %A Liu, W. %A Jin, X. %A King, Y-C. %A Hu, Chenming %T An Accurate MOSFET Intrinsic Capacitance Model Considering Quantum Mechanic Effect for BSIM 3v3.2 %I EECS Department, University of California, Berkeley %D 1998 %@ UCB/ERL M98/47 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1998/3477.html %F Liu:M98/47