Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges
Y.T. Lee
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M96/63
1996
BibTeX citation:
@techreport{Lee:M96/63,
Author = {Lee, Y.T.},
Title = {Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges},
Institution = {EECS Department, University of California, Berkeley},
Year = {1996},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html},
Number = {UCB/ERL M96/63}
}
EndNote citation:
%0 Report %A Lee, Y.T. %T Modeling of Cl_2-He Polysilicon Etching with a Global Model for High Pressure Electronegative Radio-Frequency Discharges %I EECS Department, University of California, Berkeley %D 1996 %@ UCB/ERL M96/63 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1996/3100.html %F Lee:M96/63