Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source

Erin C. Jones

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M96/36
May 1996

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/ERL-96-36.pdf

Advisor: Nathan W. Cheung

BibTeX citation:

@phdthesis{Jones:M96/36,
    Author = {Jones, Erin C.},
    Title = {Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source},
    School = {EECS Department, University of California, Berkeley},
    Year = {1996},
    Month = {May},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3035.html},
    Number = {UCB/ERL M96/36}
}

EndNote citation:

%0 Thesis
%A Jones, Erin C.
%T Ultra-Shallow Junction Fabrication Using Plasma Immersion Ion Implantation and Epitaxial Cobalt Disilicide as a Dopant Source
%I EECS Department, University of California, Berkeley
%D 1996
%@ UCB/ERL M96/36
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1996/3035.html
%F Jones:M96/36