Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model

William G. En

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M96/35
1996

Advisor: Nathan W. Cheung

---

BibTeX citation:

@phdthesis{En:M96/35,
    Author = {En, William G.},
    Title = {Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model},
    School = {EECS Department, University of California, Berkeley},
    Year = {1996},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1996/3034.html},
    Number = {UCB/ERL M96/35}
}

EndNote citation:

%0 Thesis
%A En, William G.
%T Oxide Charging Damage in Integrated Circuit Processing Investigated with a Coupled Plasma/IC Device Model
%I EECS Department, University of California, Berkeley
%D 1996
%@ UCB/ERL M96/35
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1996/3034.html
%F En:M96/35

---

Home

|      © UC Berkeley EECS

|      Oct 11, 2012 11:22

|      Contact Webteam