Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation

J.H. Huang, Z.H. Liu, M.C. Jeng, P.K. Ko and Chenming Hu

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M93/57
1993

http://www.eecs.berkeley.edu/Pubs/TechRpts/1993/ERL-93-57.pdf

We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications. BSIM3 can also be suitable for statistical modeling.


BibTeX citation:

@techreport{Huang:M93/57,
    Author = {Huang, J.H. and Liu, Z.H. and Jeng, M.C. and Ko, P.K. and Hu, Chenming},
    Title = {A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1993},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html},
    Number = {UCB/ERL M93/57},
    Abstract = {We present a physical, predictive and efficient model (BSIM3) for deep-submicrometer MOSFETs with emphasis on both digital and analog applications.  BSIM3 can also be suitable for statistical modeling.}
}

EndNote citation:

%0 Report
%A Huang, J.H.
%A Liu, Z.H.
%A Jeng, M.C.
%A Ko, P.K.
%A Hu, Chenming
%T A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation
%I EECS Department, University of California, Berkeley
%D 1993
%@ UCB/ERL M93/57
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1993/2399.html
%F Huang:M93/57