Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma
D.A. Carl, D.W. Hess, Michael A. Lieberman, T.D. Nguyen and R. Gronsky
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M91/5
1991
BibTeX citation:
@techreport{Carl:M91/5,
Author = {D.A. Carl and D.W. Hess and Michael A. Lieberman and T.D. Nguyen and R. Gronsky},
Title = {Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma},
Institution = {EECS Department, University of California, Berkeley},
Year = {1991},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html},
Number = {UCB/ERL M91/5}
}
EndNote citation:
%0 Report %A Carl, D.A. %A Hess, D.W. %A Lieberman, Michael A. %A Nguyen, T.D. %A Gronsky, R. %T Effects of DC Bias on the Kinetics and Electrical Properties of Silicon Dioxide Grown in an Electron Cyclotron Resonance Plasma %I EECS Department, University of California, Berkeley %D 1991 %@ UCB/ERL M91/5 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1991/1679.html %F Carl:M91/5