An Inversion-Layer Mobility Model for CODECS
D.A. Gates
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/96
1990
http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-96.pdf
Inversion-layer mobility in MOS transistor channels has been investigated in order to improve its modelling in the CODECS mixed-level circuit and device simulator. Several scattering mechanisms that affect this mobility are reviewed. The inversion-layer mobility can be modelled by its dependencies on the normal and lateral components of the electric field in the channel. Based on this approach, an inversion-layer-specific mobility model has been added to CODECS. A new empirical relation is used to describe the normal-field dependence of the mobility. The new expression has been tested by comparison to experimental data. The accuracy of simulation of MOSFET I(DS)-V(GS) characteristics in the linear region is improved by the new model.
BibTeX citation:
@techreport{Gates:M90/96,
Author = {D.A. Gates},
Title = {An Inversion-Layer Mobility Model for CODECS},
Institution = {EECS Department, University of California, Berkeley},
Year = {1990},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html},
Number = {UCB/ERL M90/96}
}
EndNote citation:
%0 Report %A Gates, D.A. %T An Inversion-Layer Mobility Model for CODECS %I EECS Department, University of California, Berkeley %D 1990 %@ UCB/ERL M90/96 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html %F Gates:M90/96