Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

An Inversion-Layer Mobility Model for CODECS

D.A. Gates

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/96
1990

http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-96.pdf

Inversion-layer mobility in MOS transistor channels has been investigated in order to improve its modelling in the CODECS mixed-level circuit and device simulator. Several scattering mechanisms that affect this mobility are reviewed. The inversion-layer mobility can be modelled by its dependencies on the normal and lateral components of the electric field in the channel. Based on this approach, an inversion-layer-specific mobility model has been added to CODECS. A new empirical relation is used to describe the normal-field dependence of the mobility. The new expression has been tested by comparison to experimental data. The accuracy of simulation of MOSFET I(DS)-V(GS) characteristics in the linear region is improved by the new model.


BibTeX citation:

@techreport{Gates:M90/96,
    Author = {Gates, D.A.},
    Title = {An Inversion-Layer Mobility Model for CODECS},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1990},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html},
    Number = {UCB/ERL M90/96},
    Abstract = {Inversion-layer mobility in MOS transistor channels has been
investigated in order to improve its modelling in the CODECS
mixed-level circuit and device simulator. Several scattering
mechanisms that affect this mobility are reviewed. The
inversion-layer mobility can be modelled by its dependencies
on the normal and lateral components of the electric field in
the channel. Based on this approach, an inversion-layer-specific
mobility model has been added to CODECS. A new empirical relation is
used to describe the normal-field dependence of the mobility. The new
expression has been tested by comparison to experimental data. The
accuracy of simulation of MOSFET I(DS)-V(GS) characteristics in the
linear region is improved by the new model.}
}

EndNote citation:

%0 Report
%A Gates, D.A.
%T An Inversion-Layer Mobility Model for CODECS
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/96
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1611.html
%F Gates:M90/96