Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas
D.L. Flamm
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/41
1990
Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.
BibTeX citation:
@techreport{Flamm:M90/41,
Author = {Flamm, D.L.},
Title = {Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas},
Institution = {EECS Department, University of California, Berkeley},
Year = {1990},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html},
Number = {UCB/ERL M90/41},
Abstract = {Silicon can be etched in fluorine- and chlorine- containing plasmas in many ways. This article discusses some of the basic chemical and physical phenomena which play a role and more complicated interactions and side effects found in commercial process equipment.}
}
EndNote citation:
%0 Report %A Flamm, D.L. %T Mechanisms of Silicon Etching in Fluorine- and Chlorine-Containing Plasmas %I EECS Department, University of California, Berkeley %D 1990 %@ UCB/ERL M90/41 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1487.html %F Flamm:M90/41