H. Wong, X.Y. Qian, D. Carl, Nathan W. Cheung, Michael A. Lieberman, I.G. Brown and K.M. Yu

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/23
March 1990

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-23.pdf

We have demonstrated gettering of metallic impurities in silicon wafers with plasma immersion ion implantation (PIII). Ar or Ne gas was ionized in an electron cyclotron resonance (ECR) plasma chamber. The positive charged ions were accelerated by a negative voltage applied to the wafer and implanted into the wafer. Metallic impurities were intentionally introduced into Si through thermal diffusion as marker impurities before implantation. The as-implanted dose was around 1x10 to the 16th cm-2. After an annealing step at 1000 degrees centigrade for 1 hour in a N2 ambient, the retained doses and the amount of gettered impurities were measured with Rutherford backscattering spectrometry (RBS). With a retained Ar dose in the 3.0x10 to the 14th cm-2, 3.0x10 to the 14th cm-2 and 4.4x10 to the 13th cm-2 respectively. A discrepancy between implanted Ar dose and estimated Ar dose from charge integration was found and a model is proposed to explain this discrepancy. The Ar loss mechanism during gettering annealing has also been investigated.

BibTeX citation:

@techreport{Wong:M90/23,
    Author = {Wong, H. and Qian, X.Y. and Carl, D. and Cheung, Nathan W. and Lieberman, Michael A. and Brown, I.G. and Yu, K.M.},
    Title = {Plasma Immersion Ion Implantation for Impurity Gettering in Silicon Plasma Immersion Ion Implantation and Dose Loss in Impurity Gettering Experiment},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1990},
    Month = {Mar},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1438.html},
    Number = {UCB/ERL M90/23},
    Abstract = {We have demonstrated gettering of metallic impurities in silicon wafers with plasma immersion ion implantation (PIII).  Ar or Ne gas was ionized in an electron cyclotron resonance (ECR) plasma chamber.  The positive charged ions were accelerated by a negative voltage applied to the wafer and implanted into the wafer.  Metallic impurities were intentionally introduced into Si through thermal diffusion as marker impurities before implantation.  The as-implanted dose was around 1x10 to the 16th cm-2. After an annealing step at 1000 degrees centigrade for 1 hour in a N2 ambient, the retained doses and the amount of gettered impurities were measured with Rutherford backscattering spectrometry (RBS).  With a retained Ar dose in the 3.0x10 to the 14th cm-2, 3.0x10 to the 14th cm-2 and 4.4x10 to the 13th cm-2 respectively.  A discrepancy between implanted Ar dose and estimated Ar dose from charge integration was found and a model is proposed to explain this discrepancy.  The Ar loss mechanism during gettering annealing has also been investigated.}
}

EndNote citation:

%0 Report
%A Wong, H.
%A Qian, X.Y.
%A Carl, D.
%A Cheung, Nathan W.
%A Lieberman, Michael A.
%A Brown, I.G.
%A Yu, K.M.
%T Plasma Immersion Ion Implantation for Impurity Gettering in Silicon Plasma Immersion Ion Implantation and Dose Loss in Impurity Gettering Experiment
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/23
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1438.html
%F Wong:M90/23