Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

MOSFET Model Parameter Extraction Based on Fast Simulated Diffusion

T. Sakurai and A. Richard Newton

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/20
1990

A new algorithm, namely a Fast Simulated Diffusion (FSD) is proposed to solve a multiminimal optimization problem on multi-dimensional continuous space. The algorithm performs a greedy search and random search alternately and can give the global minimum with a practical success rate. A new efficient hill-descending method which is employed as the greedy search in the FSD is proposed. When the FSD is applied to a set of standard test functions, it shows an order of magnitude faster speed than the conventional simulated diffusion. Some of the optimization problems encountered in system and VLSI designs are classified into the multi-optimal problems. A MOSFET parameter extraction problem is one of them and the proposed FSD is successfully applied to the problem with a deep sub-micron MOSFET. A program listings are also attached.


BibTeX citation:

@techreport{Sakurai:M90/20,
    Author = {Sakurai, T. and Newton, A. Richard},
    Title = {MOSFET Model Parameter Extraction Based on Fast Simulated Diffusion},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1990},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1431.html},
    Number = {UCB/ERL M90/20},
    Abstract = {A new algorithm, namely a Fast Simulated Diffusion (FSD) is proposed to solve a multiminimal optimization problem on multi-dimensional continuous space.  The algorithm performs a greedy search and random search alternately and can give the global minimum with a practical success rate.  A new efficient hill-descending method which is employed as the greedy search in the FSD is proposed.  When the FSD is applied to a set of standard test functions, it shows an order of magnitude faster speed than the conventional simulated diffusion.  Some of the optimization problems encountered in system and VLSI designs are classified into the multi-optimal problems.  A MOSFET parameter extraction problem is one of them and the proposed FSD is successfully applied to the problem with a deep sub-micron MOSFET.  A program listings are also attached.}
}

EndNote citation:

%0 Report
%A Sakurai, T.
%A Newton, A. Richard
%T MOSFET Model Parameter Extraction Based on Fast Simulated Diffusion
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/20
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1431.html
%F Sakurai:M90/20