# A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure

### T. Sakurai and A. Richard Newton

###
EECS Department

University of California, Berkeley

Technical Report No. UCB/ERL M90/19

1990

### http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-19.pdf

A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.

BibTeX citation:

@techreport{Sakurai:M90/19, Author = {Sakurai, T. and Newton, A. Richard}, Title = {A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure}, Institution = {EECS Department, University of California, Berkeley}, Year = {1990}, URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1429.html}, Number = {UCB/ERL M90/19}, Abstract = {A simple, general and realistic MOSFET model is introduced. The model can express the current characteristics of short-channel MOSFETs at least down to .25 micro meter channel length, GaAs FET, and resistance inserted MOSFETs. The model evaluation time is about 1/3 of the evaluation time of the SPICE3 MOS LEVEL3 model. The model parameter extraction is done by solving single variable equations and thus can be done within a second, being different from the fitting procedure with expensive numerical iterations employed for the conventional models. The model also enables analytical treatments of circuits in short-channel region and makes up for a missing link between a complicated MOSFET current characteristics and circuit behaviors in the deep submicron region.} }

EndNote citation:

%0 Report %A Sakurai, T. %A Newton, A. Richard %T A Simple MOSFET Model for Circuit Analysis and Its Application to CMOS Gate Delay Analysis and Series-Connected MOSFET Structure %I EECS Department, University of California, Berkeley %D 1990 %@ UCB/ERL M90/19 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1990/1429.html %F Sakurai:M90/19