BERT - Circuit Electromigration Simulator

B.K. Liew, P. Fang, Nathan W. Cheung and Chenming Hu

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M90/3
January 1990

http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/ERL-90-3.pdf

Models for predicting interconnect and intermeta1lic contact reliability under arbitrary current waveforms have been developed [1-3]. These models are incorporated in the Circuit Electromigration Simulator module in BErkeley Reliability Tool (BERT). The simulator can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative failure percent of a layout design.


BibTeX citation:

@techreport{Liew:M90/3,
    Author = {Liew, B.K. and Fang, P. and Cheung, Nathan W. and Hu, Chenming},
    Title = {BERT - Circuit Electromigration Simulator},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1990},
    Month = {Jan},
    URL = {http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1382.html},
    Number = {UCB/ERL M90/3},
    Abstract = {Models for predicting interconnect and intermeta1lic contact reliability under arbitrary current waveforms have been developed [1-3]. These models are incorporated in the Circuit Electromigration Simulator module in BErkeley Reliability Tool (BERT). The simulator can (1) generate layout advisory for width and length of each interconnect, the safety factor of each contact and via in a circuit to meet user-specified reliability requirements and (2) estimate the overall circuit electromigration failure rate and/or cumulative failure percent of a layout design.}
}

EndNote citation:

%0 Report
%A Liew, B.K.
%A Fang, P.
%A Cheung, Nathan W.
%A Hu, Chenming
%T BERT - Circuit Electromigration Simulator
%I EECS Department, University of California, Berkeley
%D 1990
%@ UCB/ERL M90/3
%U http://www2.eecs.berkeley.edu/Pubs/TechRpts/1990/1382.html
%F Liew:M90/3