Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties
D.A. Carl, D.W. Hess and Michael A. Lieberman
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M89/98
1989
BibTeX citation:
@techreport{Carl:M89/98,
Author = {Carl, D.A. and Hess, D.W. and Lieberman, Michael A.},
Title = {Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties},
Institution = {EECS Department, University of California, Berkeley},
Year = {1989},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html},
Number = {UCB/ERL M89/98}
}
EndNote citation:
%0 Report %A Carl, D.A. %A Hess, D.W. %A Lieberman, Michael A. %T Oxidation of Silicon in an ECR Oxygen Plasma: Kinetics, Physico-Chemical and Electrical Properties %I EECS Department, University of California, Berkeley %D 1989 %@ UCB/ERL M89/98 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1989/1305.html %F Carl:M89/98