Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

Determination of Process Simulation Parameters From Experiment: Plasma Etching and Photoresist Dissolution

W.R. Bell II

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M87/47
1987

http://www.eecs.berkeley.edu/Pubs/TechRpts/1987/ERL-87-47.pdf

Two I.C. fabrication process steps and the extraction of simulation model parameters for them are investigated. Plasma etching of tantalum polycide using chlorinated freons and sulfur hexaflouride is studied. It is shown that nearly vertical gate structures are achieved using these gasses, without the need for chlorine gas. Photoresist dissolution is also studied. A suite of software, PAREX, has been written which allows the automatic extraction of model parameters from experimental data gathered on a Perkin-Elmer Development Rate Monitor. An example using Kodak 820 photoresist developed in Kodak 809 is given, and the derived parameters are compared to previous characterization values. Lower values are found for high exposures, likely due to the lower level of agitation in the developer bath than in the previous measurement system. In addition, the surface retardation effect is much more difficult to extract due to noise in the data and it does not seem to be as pronounced possibly due to the lower level of agitation and to noise in the experimental data.


BibTeX citation:

@techreport{Bell II:M87/47,
    Author = {Bell II, W.R.},
    Title = {Determination of Process Simulation Parameters From Experiment: Plasma Etching and Photoresist Dissolution},
    Institution = {EECS Department, University of California, Berkeley},
    Year = {1987},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1987/909.html},
    Number = {UCB/ERL M87/47},
    Abstract = {Two I.C. fabrication process steps and the extraction of simulation
model parameters for them are investigated. Plasma etching of
tantalum polycide using chlorinated freons and sulfur hexaflouride
is studied. It is shown that nearly vertical gate structures
are achieved using these gasses, without the need for chlorine 
gas. Photoresist dissolution is also studied.  A suite of software,
PAREX, has been written which allows the automatic extraction of
model parameters from experimental data gathered on a Perkin-Elmer
Development Rate Monitor. An example using Kodak 820 photoresist
developed in Kodak 809 is given, and the derived parameters are
compared to previous characterization values. Lower values are found
for high exposures, likely due to the lower level of agitation in the
developer bath than in the previous measurement system. In addition,
the surface retardation effect is much more difficult to extract
due to noise in the data and it does not seem to be as pronounced
possibly due to the lower level of agitation and to noise in the
experimental data.}
}

EndNote citation:

%0 Report
%A Bell II, W.R.
%T Determination of Process Simulation Parameters From Experiment: Plasma Etching and Photoresist Dissolution
%I EECS Department, University of California, Berkeley
%D 1987
%@ UCB/ERL M87/47
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1987/909.html
%F Bell II:M87/47