Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts
N. Kepler
EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M85/104
1985
BibTeX citation:
@techreport{Kepler:M85/104,
Author = {N. Kepler},
Title = {Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts},
Institution = {EECS Department, University of California, Berkeley},
Year = {1985},
URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html},
Number = {UCB/ERL M85/104}
}
EndNote citation:
%0 Report %A Kepler, N. %T Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-Alloyed Ohmic Contacts %I EECS Department, University of California, Berkeley %D 1985 %@ UCB/ERL M85/104 %U http://www.eecs.berkeley.edu/Pubs/TechRpts/1985/622.html %F Kepler:M85/104