Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

Simulation of Dry Etched Line-Edge Profiles

John L. Reynolds

EECS Department
University of California, Berkeley
Technical Report No. UCB/ERL M81/2
1981

http://www.eecs.berkeley.edu/Pubs/TechRpts/1981/ERL-81-2.pdf

Computer simulation of plasma etched two-dimensional profiles is explored. The model divides the process into three rate components: isotropic or chemically reactive etching, anisotropic or directional etching, and orientationally dependent ion beam etching. The algorithm extends the user-oriented computer program for Simulation And Modelling of Profiles in Lithography and Etching (SAMPLE) which simulates the time evolution of line-edge profiles by advancing nodes on a string. Applications here include residue left at a step using anisotropic etching and undercut produced using arsenic implanted poly-silicon layers.


BibTeX citation:

@mastersthesis{Reynolds:M81/2,
    Author = {Reynolds, John L.},
    Title = {Simulation of Dry Etched Line-Edge Profiles},
    School = {EECS Department, University of California, Berkeley},
    Year = {1981},
    URL = {http://www.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html},
    Number = {UCB/ERL M81/2},
    Abstract = {Computer simulation of plasma etched two-dimensional profiles
is explored.  The model divides the process into three rate
components: isotropic or chemically reactive etching, anisotropic
or directional etching, and orientationally dependent ion beam
etching.  The algorithm extends the user-oriented computer program
for Simulation And Modelling of Profiles in Lithography and Etching
(SAMPLE) which simulates the time evolution of line-edge profiles
by advancing nodes on a string.  Applications here include residue
left at a step using anisotropic etching and undercut produced
using arsenic implanted poly-silicon layers.}
}

EndNote citation:

%0 Thesis
%A Reynolds, John L.
%T Simulation of Dry Etched Line-Edge Profiles
%I EECS Department, University of California, Berkeley
%D 1981
%@ UCB/ERL M81/2
%U http://www.eecs.berkeley.edu/Pubs/TechRpts/1981/9611.html
%F Reynolds:M81/2