Articles in journals or magazines
C. K. Dabhi, D. Nandi, K. Nandan, D. Rajasekharan, G. Pahwa, N. Karumuri, S. Turuvekere, A. Dutta, B. Swaminathan, S. Srihari, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Symmetric BSIM-SOI—Part II: A Compact Model for Partially Depleted SOI MOSFETs," IEEE Transactions on Electron Devices , pp. 1-8, 2024.
C. K. Dabhi, D. Rajasekharan, G. Pahwa, D. Nandi, N. Karumuri, S. Turuvekere, A. Dutta, B. Swaminathan, S. Srihari, Y. S. Chauhan, S. Salahuddin, and C. Hu, "Symmetric BSIM-SOI—Part I: A Compact Model for Dynamically Depleted SOI MOSFETs," IEEE Transactions on Electron Devices , pp. 1-9, Feb. 2024.
A. I. Khan, K. Chatterjee, B. Wang, S. Drapcho, L. You, C. Serrao, S. R. Bakaul, R. Ramesh, and S. Salahuddin, "Negative capacitance in a ferroelectric capacitor ," Nature materials , vol. 14, no. 2, pp. 182--186, Jan. 2015.
D. Bhowmik, L. You, and S. Salahuddin, "Spin Hall effect clocking of nanomagnetic logic without a magnetic field ," Nature Nanotechnology , 2013.
S. Salahuddin, "Solid-state physics: A new spin on spintronics ," Nature , vol. 494, no. 7435, pp. 43--44, 2013.
M. R. Esmaeili-Rad and S. Salahuddin, "High Performance Molybdenum Disulfide Amorphous Silicon Heterojunction Photodetector ," Scientific Reports , vol. 3, Aug. 2013.
Y. Yoon, K. Ganapathi, and S. Salahuddin, "How Good Can Monolayer MoS2 Transistors Be? ," Nano Letters , vol. 11, no. 9, pp. 3768-3773, 2011.
Y. Yoon, D. E. Nikonov, and S. Salahuddin, "Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green's function method with real space approach ," Applied Physics Letters , vol. 98, no. 20, pp. 203503, 2011.
J. T. Heron, M. Trassin, K. Ashraf, M. Gajek, Q. He, S. Y. Yang, D. E. Nikonov, Y. Chu, S. Salahuddin, and R. Ramesh, "Electric-Field-Induced Magnetization Reversal in a Ferromagnet-Multiferroic Heterostructure ," Phys. Rev. Lett. , vol. 107, pp. 217202, Nov. 2011.
A. I. Khan, D. Bhowmik, P. Yu, S. J. Kim, X. Pan, R. Ramesh, and S. Salahuddin, "Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures (Cover Story) ," Applied Physics Letters , vol. 99, no. 11, pp. 113501, Sep. 2011.
K. Ganapathi and S. Salahuddin, "Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current ," Electron Device Letters, IEEE , vol. 32, no. 5, pp. 689 -691, May 2011.
H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S. Chen, M. Madsen, A. C. Ford, Y. Chueh, S. Krishna, S. Salahuddin, and A. Javey, "Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors ," Nature , vol. 468, no. 7321, pp. 286-289, Nov. 2010.
Y. Yoon and S. Salahuddin, "Barrier-free tunneling in a carbon heterojunction transistor (Cover Story) ," Applied Physics Letters , vol. 97, no. 3, pp. 033102, July 2010.
B. Behin-Aein, D. Datta, S. Salahuddin, and S. Datta, "Proposal for an all-spin logic device with built-in memory ," Nature Nanotechnology , vol. 5, no. 4, pp. 266--270, Feb. 2010.
S. Salahuddin and S. Datta, "Use of negative capacitance to provide voltage amplification for low power nanoscale devices (Issue Cover Story) ," Nanoletters , vol. 8, no. 2, pp. 405-410, Feb. 2008.
S. Salahuddin, M. Lundstrom, and S. Datta, "Transport effects on signal propagation in quantum wires," Electron Devices, IEEE Transactions on , vol. 52, no. 8, pp. 1734--1742, 2005.
Technical Reports
S. Smith, "Quantum Transport and Phase-Field Modeling for Next-Generation Logic Devices ," S. Salahuddin, J. Bokor, and J. Neaton, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2017-128, July 2017.
Patents
B. Behin-Aein, S. Srinivasan, A. Sarkar, S. Datta, and S. Salahuddin, "All-spin logic devices ," U.S. Patent 8,558,571. Oct. 2013.
S. Datta and S. Salahuddin, "Transistor including paramagnetic impurities and having anti-parallel ferromagnetic contacts ," U.S. Patent 7,626,236. Dec. 2009.
Ph.D. Theses
J. C. Hsu, "Investigation of Energy Efficient Magnetic Switching in Novel Materials and Device Structures for Spintronics Application," S. Salahuddin, E. Yablonovitch, J. Analytis, and F. Hellman, Eds., 2023.
Y. Liao, "Modeling and Design of Nanoscale Ferroelectric and Negative-Capacitance Gate Transistors ," S. Salahuddin, C. Hu, and J. Wu, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2022-32, May 2022.
A. Tan, "Towards High-Endurance, Nonvolatile, CMOS-Compatible Ferroelectric Memories for Next-Generation Computing ," S. Salahuddin, C. Hu, and J. Wu, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2022-17, May 2022.
V. Mishra, "2-D Materials: Low Power Electronics and Novel Device Possibilities ," S. Salahuddin, V. Subramanian, T. King Liu, and J. Wu, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2019-13, May 2019.
K. Chatterjee, "Design and Characterization of Ferroelectric Negative Capacitance ," S. Salahuddin, C. Hu, and R. Ramesh, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2018-131, Sep. 2018.
Masters Reports
N. Shenoy, "Modeling EOL Degradation for NBTI Reliability of Low EOT Negative Capacitance p-SOI MOSFETs ," S. Salahuddin, Ed., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2023-175, May 2023.
D. Patnaik, "Three-Dimensional Structure Formation via Inkjet-printed Metal Nanoparticles: Ink and Application Development ," V. Subramanian and S. Salahuddin, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2018-96, Aug. 2018.
Z. Lu, "Exploration of surface states in a monolayer MoS2 transistor by pulsed gating ," S. Salahuddin and J. Bokor, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2016-188, Dec. 2016.
H. Abdel-Raziq, "Enhancement of the Spin Hall Effect in Heavy Metal Bilayers ," S. Salahuddin and J. Bokor, Eds., EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2016-29, May 2016.
J. Wong and S. Salahuddin, "Piezoelectric Negative Capacitance ," EECS Department, University of California, Berkeley, Tech. Rep. UCB/EECS-2015-57, May 2015.