Faculty Publications - William G. Oldham

Books

• S. E. Schwarz and W. G. Oldham, Electrical Engineering: An Introduction, 2nd ed., Saunders College Publishing Electrical Engineering, Fort Worth: Saunders College Pub., 1993. [abstract]
• S. E. Schwarz and W. G. Oldham, Electrical Engineering: An Introduction, HRW Series in Electrical and Computer Engineering, New York: Holt, Rinehart, and Winston, 1984. [abstract]
• S. E. Schwarz and W. G. Oldham, Electrical Engineering: An Introduction, 1st ed., HRW Series in Electrical and Computer Engineering, New York, NY: Holt, Rinehart, and Winston, 1984. [abstract]
• P. Antognetti, D. A. Antoniadis, R. W. Dutton, and W. G. Oldham, Eds., Process and Device Simulation for MOS-VLSI Circuits, NATO Advanced Study Institute Series. Series E: Applied Sciences; No. 62, The Hague, Netherlands: Martinus Nijhoff Publishers, 1983. [abstract]
• W. G. Oldham and S. E. Schwarz, An Introduction to Electronics, New York: Holt, 1972. [abstract]

Book chapters or sections

• Y. Chen, C. H. Chu, Y. Shroff, J. Wang, and W. G. Oldham, "Design and fabrication of tilting and piston micromirrors for maskless lithography," in Emerging Lithographic Technologies IX, R. S. Mackay, Ed., Proceedings of the SPIE, Vol. 5751, SPIE, 2005, pp. 1023-1037.
• Y. A. Shroff, Y. Chen, and W. G. Oldham, "Image optimization for maskless lithography," in Emerging Lithographic Technologies VIII, R. S. Mackay, Ed., Proceedings of the SPIE, Vol. 5374, SPIE, 2004, pp. 637-647.
• Y. A. Shroff, Y. Chen, and W. G. Oldham, "Optical analysis of mirror based pattern generation," in Emerging Lithographic Technologies VII, R. L. Engelstad, Ed., Proceedings of the SPIE, Vol. 5037, SPIE, 2003, pp. 550-559.

Articles in journals or magazines

• W. G. Oldham and Y. Shroff, "Mirror-based pattern generation for maskless lithography," Microelectronic Engineering, vol. 73-74, no. 1, pp. 42-47, June 2004.
• Y. Shroff, Y. Chen, and W. G. Oldham, "Fabrication of parallel-plate nanomirror arrays for extreme ultraviolet maskless lithography," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 19, no. 6, pp. 2412-2415, Nov. 2001.
• S. H. Lee, P. Naulleau, K. A. Goldberg, F. Piao, W. G. Oldham, and J. Bokor, "Phase-shifting point-diffraction interferometry at 193 nm," Applied Optics, vol. 39, no. 31, pp. 5768-5772, Nov. 2000.
• F. Piao, W. G. Oldham, and E. Haller, "Ultraviolet-induced densification of fused silica," J. Applied Physics, vol. 87, no. 7, pp. 3287-3293, April 2000.
• N. Choksi, D. S. Pickard, M. McCord, R. F. W. Pease, Y. Shroff, Y. Chen, W. G. Oldham, and D. Markle, "Maskless extreme ultraviolet lithography," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 17, no. 6, pp. 3047-3051, Nov. 1999.
• F. Piao, W. G. Oldham, and E. E. Haller, "Thermal annealing of deep ultraviolet (193 nm) induced compaction in fused silica," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 6, pp. 3419-3421, Nov. 1998.
• C. H. Fields, W. G. Oldham, A. K. Ray-Chaudhuri, K. D. Krenz, and R. H. Stulen, "Direct aerial image measurements to evaluate the performance of an extreme ultraviolet projection lithography system," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 14, no. 6, pp. 4000-4003, Nov. 1996.
• J. Bokor, A. R. Neureuther, and W. G. Oldham, "Advanced lithography for ULSI," IEEE Circuits and Devices Magazine, vol. 12, no. 1, pp. 11-15, Jan. 1996.
• Y. Shih, G. Zhang, C. Hu, and W. G. Oldham, "Thin dielectric degradation during silicon selective epitaxial growth process," Applied Physics Letters, vol. 67, no. 14, pp. 2040-2042, Oct. 1995.
• Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham, "Copper transport in thermal SiO2," J. Electrochemical Society, vol. 140, no. 8, pp. 2427-2432, Aug. 1993.
• W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar, "A general simulator for VLSI lithography and etching processes: Part II--Application to deposition and etching," IEEE Trans. Electron Devices, vol. 27, no. 8, pp. 1455-1459, Aug. 1980.
• W. G. Oldham, S. N. Nandgaonkar, A. R. Neureuther, and M. O'Toole, "A general simulator for VLSI lithography and etching processes: Part I--Application to projection lithography," IEEE Trans. Electron Devices, vol. 26, no. 4, pp. 717-722, April 1979.
• W. G. Oldham, "The fabrication of microelectronic circuits," Scientific American, vol. 237, no. 3, pp. 111-114, Sep. 1977.

Articles in conference proceedings

• B. Nikolic, B. Wild, V. Dai, Y. A. Shroff, B. Warlick, A. Zakhor, and W. G. Oldham, "Layout decompression chip for maskless lithography," in Proc. SPIE: Emerging Lithographic Technologies VIII, R. S. Mackay, Ed., Vol. 5374, Bellingham, WA: SPIE, 2004, pp. 1092-1099.
• Y. Chen, Y. Shroff, and W. G. Oldham, "Transient optimization of an electrically-damped cantilever-supported microactuator and the pull-in analysis," in Proc. ASME Intl. Mechanical Engineering Congress and Exposition: MEMS 2000, A. P. Lee, A. P. Malshe, F. K. Forster, Q. Tan, and R. S. Keynton, Eds., New York, NY: ASME, 2000, pp. 319-324.
• Y. Chen, Y. Shroff, and W. G. Oldham, "Switching of a double-comb microactuator by time-lag modulation and electrical-damping control," in Proc. ASME Intl. Mechanical Engineeering Congress and Exposition: MEMS 2000, A. P. Lee, A. P. Malshe, F. K. Forster, Q. Tan, and R. S. Keynton, Eds., New York, NY: ASME, 2000, pp. 157-160.

Technical Reports

• W. G. Oldham and A. R. Neureuther, "Investigation of Process Technology Elements," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M91/66, 1991.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Electrical Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/39, 1988.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Visual Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/38, 1988.
• W. G. Oldham, A. R. Neureuther, Y. Shacham, and F. Dupois, "Berkeley CMOS Process: A User Guide," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/84, 1984.
• W. G. Oldham, A. R. Neureuther, and Y. Shacham, "Berkeley CMOS Process Test Patterns," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/26, 1984.

Patents

• W. N. Partlo, A. I. Ershov, I. V. Fomenkov, D. W. Myers, and W. Oldham, "EUV light source collector erosion mitigation," U.S. Patent 7,141,806. Nov. 2006.
• W. G. Oldham, Y. Chen, and Y. Shroff, "Double hidden flexure microactuator for phase mirror array," U.S. Patent 7,075,699. July 2006.
• W. N. Partlo, R. L. Sandstrom, I. V. Fomenkov, A. I. Ershov, W. Oldham, W. F. Marx, and O. Hemberg, "EUV collector debris management," U.S. Patent Application. May 2006.
• W. N. Partlo and W. G. Oldham, "Method and means for reducing speckle in coherent laser pulses," U.S. Patent 5,233,460. Aug. 1993.
• W. G. Oldham, "Monolithically integrated read-only memory," U.S. Patent 4,450,537. May 1984.
• W. G. Oldham, "Monolithically integrated circuit with connectible and/or disconnectible circuit portions," U.S. Patent 4,441,036. April 1984.
• W. G. Oldham, "Monolithic static memory cell and method for its operation," U.S. Patent 4,396,996. Aug. 1983.
• W. G. Oldham, "Process for forming a low resistance interconnect in MOS n-channel silicon gate integrated circuit," U.S. Patent 4,013,489. March 1977.