Faculty Publications - Andrew R. Neureuther

Book chapters or sections

• D. T. Blackston, J. Demmel, A. R. Neureuther, and B. Wu, "Integration of an adaptive parallel N-body solver into a particle by particle electron-beam interaction simulator," in Proc. SPIE: Charged Particle Optics IV, E. Munro, Ed., Vol. 3777, Bellingham, WA: SPIE -- The International Society for Optical Engineering, 1999, pp. 228-239.

Articles in journals or magazines

• A. R. Neureuther, R. F. W. Pease, L. Yuan, K. Baghbani Parizi, H. Esfandyarpour, W. J. Poppe, J. A. Liddle, and E. H. Anderson, "Shot noise models for sequential processes and the role of lateral mixing," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 24, no. 4, pp. 1902-1908, July 2006.
• A. R. Neureuther and D. Ceperley, "Invited Paper: Modeling and simulation for nanometrics," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 23, no. 6, pp. 2578-2583, Nov. 2005.
• C. F. R. Mateus, M. C. Y. Huang, Y. Deng, A. R. Neureuther, and C. Chang-Hasnain, "Ultrabroadband mirror using low-index cladded subwavelength grating," IEEE Photonics Technology Letters, vol. 16, no. 2, pp. 518-520, Feb. 2004.
• G. Robins, K. Adam, and A. R. Neureuther, "Measuring optical image aberrations with pattern and probe based targets," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 1, pp. 338-343, Jan. 2002.
• N. Rau, F. Stratton, C. Fields, T. Ogawa, A. R. Neureuther, R. Kubena, and G. Willson, "Shot-noise and edge roughness effects in resists patterned at 10 nm exposure," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 16, no. 6, pp. 3784-3788, Nov. 1998.
• J. Bokor, A. R. Neureuther, and W. G. Oldham, "Advanced lithography for ULSI," IEEE Circuits and Devices Magazine, vol. 12, no. 1, pp. 11-15, Jan. 1996.
• R. Guerrieri, K. H. Tadros, J. Gamelin, and A. R. Neureuther, "Massively parallel algorithms for scattering in optical lithography," IEEE Trans. Computer-Aided Design of Integrated Circuits and Systems, vol. 10, no. 9, pp. 1091-1100, Sep. 1991.
• A. R. Neureuther and C. G. Willson, "Reduction in x-ray lithography shot noise exposure limit by dissolution phenomena," J. Vacuum Science & Technology B: Microelectronics -- Processing and Phenomena, vol. 6, no. 1, pp. 167-173, Jan. 1988.
• A. R. Neureuther, P. Flanner, III, and S. Shen, "Coherence of defect interactions with features in optical imaging," J. Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol. 5, no. 1, pp. 308-312, Jan. 1987.
• W. G. Oldham, A. R. Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar, "A general simulator for VLSI lithography and etching processes: Part II--Application to deposition and etching," IEEE Trans. Electron Devices, vol. 27, no. 8, pp. 1455-1459, Aug. 1980.
• W. G. Oldham, S. N. Nandgaonkar, A. R. Neureuther, and M. O'Toole, "A general simulator for VLSI lithography and etching processes: Part I--Application to projection lithography," IEEE Trans. Electron Devices, vol. 26, no. 4, pp. 717-722, April 1979.
• A. R. Neureuther, R. M. White, and C. Wright, "Introduction to electronics: Sophomore self-study course," IEEE Trans. Education, vol. 22, no. 1, pp. 17-20, Feb. 1979.
• A. R. Neureuther, R. M. White, and C. Wright, "Introduction to electronics: Sophomore self-study course," IEEE Trans. Education, vol. E-22, no. 1, pp. 17-20, Feb. 1979.
• F. H. Dill, A. R. Neureuther, J. A. Tuttle, and E. J. Walker, "Modeling projection printing of positive photoresists," IEEE Trans. Electron Devices, vol. ED-22, no. 7, pp. 456-464, July 1975.

Articles in conference proceedings

• M. Miller, A. R. Neureuther, and D. P. Ceperley, "Characterization and monitoring of photomask edge effects (Conference Proceedings Paper)," in Proceedings of the SPIE,, Vol. 6730, 2007.
• W. J. Poppe, L. Capodieci, and A. R. Neureuther, "Platform for collaborative DFM," in Proc. SPIE: Design and Process Integration for Microelectronic Manufacturing IV, A. K. K. Wong and V. K. Singh, Eds., Vol. 6156, Bellingham, WA: SPIE, 2006, pp. 61560E1-10.
• G. McIntyre, A. R. Neureuther, S. Slonaker, V. Vellanki, and P. Reynolds, "Experimental verification of PSM polarimetry: Monitoring polarization at 193nm high-NA with phase shift masks," in Proc. SPIE: Optical Microlithography XIX, D. G. Flagello, Ed., Vol. 6154, Bellingham, WA: SPIE, 2006, pp. 61540D1-12.
• L. Yuan, S. Nagahara, and A. R. Neureuther, "Applying double exposed sharp tip technique (DEST) to characterize material phenomena in DUV photoresist," in Proc. SPIE: Advances in Resist Technology and Processing XXII, J. L. Sturtevant, Ed., Vol. 5753, Bellingham, WA: SPIE, 2005, pp. 1108-1118.
• M. C. Lam and A. R. Neureuther, "Fast simulation methods for defective EUV mask blank inspection," in Proc. SPIE: 24th Annual BACUS Symp. on Photomask Technology, W. Staud and J. T. Weed, Eds., Vol. 5567, Bellingham, WA: SPIE, 2004, pp. 741-750.
• G. C. Robins and A. R. Neureuther, "Conference Best Paper Award: Characterizing the demons in high-NA phase-shifting masks," in Proc. SPIE: 24th Annual BACUS Symp. on Photomask Technology, W. Staud and J. T. Weed, Eds., Vol. 5567, Bellingham, WA: SPIE, 2004, pp. 445-455.
• K. Adam and A. R. Neureuther, "Methodology for accurate and rapid simulation of large arbitrary 2D layouts of advanced photomasks," in Proc. SPIE: 21st Annual BACUS Symp. on Photomask Technology, G. T. Dao and B. J. Grenon, Eds., Vol. 4562, Bellingham, WA: SPIE, 2002, pp. 1051-1067.
• F. E. Gennari and A. R. Neureuther, "Aberrations are a big part of OPC for phase-shifting masks," in Proc. SPIE: 21st Annual BACUS Symp. on Photomask Technology, G. T. Dao and B. J. Grenon, Eds., Vol. 4562, Bellingham, WA: SPIE, 2002, pp. 1077-1086.
• K. Adam and A. R. Neureuther, "Simplified models for edge transitions in rigorous mask modeling," in Proc. SPIE: Optical Microlithography XIV, C. J. Progler, Ed., Vol. 4346, Bellingham, WA: SPIE, 2001, pp. 331-344.
• A. R. Neureuther, R. H. Wang, J. J. Helmsen, J. F. Sefler, E. W. Scheckler, R. Gunturi, and R. Winterbottom, "3D topography simulation using surface representation and central utilities," in 3-Dimensional Process Simulation: Proc. Intl. Workshop on 3D Process Simulation, J. Lorenz, Ed., Wien, Austria: Springer-Verlag, 1995, pp. 57-76.
• K. H. Toh and A. R. Neureuther, "Identifying and monitoring effects of lens aberrations in projection printing," in Proc. SPIE: Optical Microlithography VI, H. L. Stover, Ed., Vol. 772, Bellingham, WA: SPIE, 1987, pp. 202-209.
• M. D. Prouty and A. R. Neureuther, "Optical imaging with phase shift masks," in Proc. of the SPIE: Optical Microlithography III: Technology for the Next Decade, H. L. Stover, Ed., Vol. 470, Bellingham, WA: SPIE, 1984, pp. 228-232.
• A. R. Neureuther and K. Zaki, "Numerical methods for the analysis of scattering from non-planar periodic structures," in Selected Papers from the URSI Symp. on Electromagnetic Waves, Alta Frequenza, Special Issue, Vol. 38, Maggio, 1969, pp. 282-285.

Technical Reports

• D. Lee, D. Newmark, K. Toh, P. Flanner, and A. R. Neureuther, "SPLAT v5.0 User's Guide," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M95/13, 1995.
• A. R. Neureuther, C. J. Spanos, M. Hatzilambrou, and C. Yu, "White Paper Concurrent Circuit Design/ Process Engineering in a Flexible Manufacturing Environment," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M93/91, 1993.
• W. G. Oldham and A. R. Neureuther, "Investigation of Process Technology Elements," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M91/66, 1991.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Electrical Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/39, 1988.
• A. R. Neureuther, W. G. Oldham, R. Anderson, D. Drako, W. Haller, B. Huynh, D. Lyons, G. Misium, D. Sutija, K. Toh, and B. Uathavikul, "Test Structures for the Visual Characterization of Optical Lithography," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M88/38, 1988.
• W. G. Oldham, A. R. Neureuther, Y. Shacham, and F. Dupois, "Berkeley CMOS Process: A User Guide," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/84, 1984.
• W. G. Oldham, A. R. Neureuther, and Y. Shacham, "Berkeley CMOS Process Test Patterns," EECS Department, University of California, Berkeley, Tech. Rep. UCB/ERL M84/26, 1984.

Patents

• G. R. McIntyre and A. R. Neureuther, "A method to monitor the state of polarization incident on a photomask in projection printing is presented. The method includes a series of phase-shifting mask patterns that take advantage of high NA e," U.S. Patent 7224458. May 2007.
• A. R. Neureuther, K. Adam, G. C. Robins, and E. F. Gennari, "Characterizing aberrations in an imaging lens and applications to visual testing and integrated circuit mask analysis," U.S. Patent 7,030,997. April 2006.
• G. R. McIntyre and A. R. Neureuther, "Phase-shifting test mask patterns for characterizing illumination polarization balance in image forming optical systems," U.S. Patent Application. Feb. 2006.
• A. R. Neureuther and G. R. McIntyre, "Phase shifting test mask patterns for characterizing illumination and mask quality in image forming optical systems," U.S. Patent Application. Feb. 2005.
• M. Cheng and A. R. Neureuther, "Method and apparatus for enhancing resist sensitivity and resolution by application of an alternating electric field during post-exposure bake," U.S. Patent 6,686,132. Feb. 2004.
• Y. Liu, A. Zakhor, and A. Neureuther, "Method for making masks," U.S. Patent 5,326,659. July 1994.