The goal of this project is to optimize the SiGe film deposition process with laser thermo annealing and make 3 mm SiGe film possible for post CMOS radio frequency MEMS resonators. Economical growth rate, low thermal budget, small stress gradient, and high quality factor are the requirements for the SiGe film. Reducing capacitance feedthrough and expanding the frequency limit of the electronics will be essential in high frequency signal detection.