Electrical Engineering
      and Computer Sciences

Electrical Engineering and Computer Sciences

COLLEGE OF ENGINEERING

UC Berkeley

About EECS
EECS Overview
History / Impact
Diversity / Outreach
Map and Directions
Administration
Academics
Degree Programs
Undergrad Admissions
Graduate Admissions
Student Information
Courses/Objectives & Outcomes
Research
Areas
Centers
Projects
Publications
Visiting Scholars
People
Directory
Faculty
Staff
Students
Alumni
External Relations
Memberships
Student Recruitment
Entrepreneurial Activities
Calendar
Seminars
Conferences
Colloquium
News
   

SIMPL SYSTEM 5 and SIMPL SYSTEM 6

SIMPL System 5 and 6 are collections of software, running under the X11 Window System, that generate device cross-sections from layout and process-flow information. Both release tapes include SIMPL-DIX, a menu-based graphical user interface running the X11 Window System. SIMPL-DIX includes the design tools HUNCH, WORST, and CRITIC for locating and identifying problem areas on layouts and cross-sections. SIMPL-DIX also includes a number of utilities to assist the designer in running process simulations. A layout and profile viewer can magnify sections of the display, identify various regions, obtain a doping profile along a line in the cross-section, overlay a scaled grid, force the ratio of X:Y scales to be 1:1, and show individual doping profiles of the supported attributes as well as the net doping profile.

The primary CAD tool for creating device cross-sections is SIMPL-2, which can generate cross-sectional profiles with two-dimensional effects such as "bird's beak," lateral diffusion, undercutting, and sidewall coverage. More rigorous simulation can also be performed using SIMPL-2 as an interface to invoke other process simulators. Currently, SIMPL-2 invokes the topography simulator, SAMPLE, for deposition, etching of multiple nonplanar layers, and lithography on a planar substrate. In SIMPL-2 there is a SUPREM-IV interface for simulating implantation supporting the attributes Boron, Arsenic, Phosphorus, and Antimony, as well for simulating diffusion. Both versions of SIMPL-2 also have a SUPREM-III command file writer that can be used to generate SUPREM-III input files from SIMPL-2 process descriptions for a given point on a layout. Links to the CREEP program, for simulating reflow and shrink-back of spun-on films, and to PISCES-II, for planar MOSFET analysis, also exist.

A region of a layout may be selected with SIMPL-DIX and sent to SPLAT, a 2D projection lithography aerial imaging program, for further analysis. In addition, RACPLE, a program for estimating the resistance and capacitance of thin films, can be invoked automatically from SIMPL-DIX. The FANG geometry manipulation package is also included.

The SIMPL System 5 tape includes parts of C SAMPLE 1.8b, SPLAT 3.0, Contour, Drawmask, Drawplot, and SIMTOT source code. Both tapes include the FANG geometry manipulation package. Neither tape, however, includes the other programs on the SAMPLE 1.8b tape: EEDP, REFLOP, nor the online user's guides and examples for 1.8b and SPLAT.

New in SIMPL-DIX (v. 6) are a number of new user interface features. The user now has the ability to outline, flash identify, and hide layout masks. Layers in the cross-section can also be identified by flashing. A new Zoom/View menu has been added to allow the user more flexibility when viewing cross-sections especially when equal aspect ratio views are required.

New in SIMPL-2 (v. 6) are a number of new features and code improvements. A new rigorous non-planar etching module with an etch rate library has been implemented to allow etching of up to 20 non-planar layers. The regular etching routines have also been made more robust, and allow the simulation of stringers. A new polygon data structure has been implemented allowing for more material boundaries and easier code development.

Documentation Included with the Program:

  1. User's Guide and Installation Notes. Available separately for $5.00

Additional Documentation Available:

Special Licensing/Distribution Restrictions: