Ana Claudia Arias
- Berkeley Wireless Research Center (BWRC)
- SWARM Lab
Prof. Arias received her PhD in Physics from the University of Cambridge, UK in 2001. Prior to that, she received her master and bachelor degrees in Physics from the Federal University of Paraná in Curitiba, Brazil in 1997 and 1995 respectively.
She joined the University of California, Berkeley in January of 2011. Prof. Arias was the Manager of the Printed Electronic Devices Area and a Member of Research Staff at PARC, a Xerox Company. She went to PARC, in 2003, from Plastic Logic in Cambridge, UK where she led the semiconductor group.
Her research focuses on the use of electronic materials processed from solution in flexible electronic systems. She uses printing techniques to fabricate flexible large area electronic devices and sensors.
- L. L. Lavery, G. L. Whiting, and A. C. Arias, "All ink-jet printed polyfluorene photosensor for high illuminance detection," Organic Electronics, vol. 12, pp. 682-685, Feb. 2011.
- A. C. Arias, J. D. MacKenzie, I. McCulloch, J. Rivnay, and A. Salleo, "Materials and Applications for Large Area Electronics: Solution-Based Approaches," Chem. Rev, vol. 110, pp. 3-24, Jan. 2010.
- G. L. Whiting and A. C. Arias, "Chemically modified ink-jet printed silver electrodes for organic field-effect transistors," Applied Physics Letters, vol. 95, pp. 253302, Dec. 2009.
- T. Ng, B. Russo, and A. C. Arias, "Degradation mechanisms of organic ferroelectric field-effect transistors used as nonvolatile memory," Journal of Applied Physics, vol. 106, pp. 094505, Nov. 2009.
- S. Sambandan, R. Kist, R. Lujan, T. Ng, A. C. Arias, and R. Street, "Compact model for forward subthreshold characteristics in polymer semiconductor transistors," Journal of Applied Physics, vol. 106, pp. 084501, Oct. 2009.
- T. Ng, S. Sambandan, R. Lujan, A. C. Arias, C. Newman, H. Yan, and A. Facchetti, "Electrical stability of inkjet-patterned organic complementary inverters measured in ambient conditions," Applied Physics Letters, vol. 94, pp. 233307, June 2009.
- V. Sholin, R. Street, S. Carter, and A. C. Arias, "High work function materials for source/drain contacts in printed polymer thin film transistors," Applied Physics Letters, vol. 92, pp. 063307, Feb. 2008.
- T. Ng, J. Daniel, S. Sambandan, A. C. Arias, M. Chabinyc, and R. Street, "Gate bias stress effects due to polymer gate dielectrics in organic thin-film transistors," Journal of Applied Physics, vol. 103, pp. 044506, Feb. 2008.
- A. C. Arias, S. Ready, R. Lujan, W. S. Wong, K. Paul, A. Salleo, M. Chabinyc, R. Apte, R. Street, Y. Wu, P. Liu, and B. Ong, "All jet-printed polymer thin-film transistor active-matrix backplanes," Applied Physics Letters, vol. 85, pp. 3304, Aug. 2004.
- C. Ramsdale, J. Barker, A. C. Arias, J. MacKenzie, R. Friend, and N. Greenham, "The origin of the open-circuit voltage in polyfluorene-based photovoltaic devices," Journal of Applied Physics, vol. 92, pp. 4266, July 2002.