EE 143. Microfabrication Technology
Current Schedule (Fall 2016)
Catalog Description: (4 units) Integrated circuit device fabrication and surface micromatching technology. Thermal oxidation, ion implantation, dopant diffusion, film deposition, epitaxy, lithography, etching, contacts and interconnections, and process integration issues. Device design and mask layout, relation between physical structure and electrical/mechanical performance. MOS transistors and MEMS microstructures will be fabricated in the laboratory and characterized.
Prerequisites: Physics 7B, EECS 40.
Course objectives: Process integration design of MOS and MEMS devices based on fabrication modules. To establish relationships between process parameters and device parameters. Implementation of fabrication and testing methodologies in laboratory.
- Fabrication of monolithic integrated circuits and surface microstructures, with emphasis on silicon planar technology: consideration of mask layout, photolithography, thermal oxidation, ion implantation, dopant diffusion, film deposition, epitaxy, etching, contacts and interconnections, and process integration issues.
- Electrical properties of semiconductor materials and integrated circuit devices; characterization of diodes, capacitors and MOS transistors, including effects of parasitic elements. Mechanical properties of polycrystalline silicon and oxide films; characterization of surface microstructures to evaluate Young's modulus, residual stress and quality factor.
- Last two weeks of lectures are selected modules by the instructor on nanofabrication techniques, future trends, green manufacturing, and electronic products of current interest.
- A four-mask process will be carried out in the laboratory to fabricate functional semiconductor devices, simple IC circuits, and surface microstructures. The process and devices will be characterized by electrical or mechanical testing.