WILLIAM
G. OLDHAM
RESEARCH
PUBLICATIONS 1963-2004
1. "N-n
Semiconductor Heterojunctions,"Solid State Elec.,Vol.
6, p. 121 (1963) (with A. G. Milnes).
2. "
3.
"Semiconductor Heterojunctions,"(Ph.D. thesis) Office of Technical
Services AD 412-297.
4.
"Chemical Polishing of GaP,"Electrochem. Tech.,Vol. 3, p. 57 (1965).
5.
"Vapor Growth of GaP on GaAs
Substrates,"J. Appl. Phys.,Vol. 36, p. 2887 (1965).
6.
"Resistivity Control of Ge Grown by GeI2Disproportionation,"
(Communication) J. Appl. Phys., Vol. 36, p. 3685
(1965) (with A.
R. Riben and D. L. Feucht).
7.
"Preparation of Ge/Si and Ge/GaAs
Heterojunctions," J. Electrochem. Soc., Vol.
113, p. 245 (1966) (with
A. R. Riben and D. L. Feucht).
8
."The Growth and
Etching of Silicon Through Windows in SiO2," J. Electrochem Soc., Vol. 114, p. 381 (1967) (with R. Holmstrom).
9. "Elipsometry Using a Retardation Plate as Compensator,"
J. Opt. Soc. of Amer., Vol. 57, p. 617 (1967).
10. "Electrooptic Junction Modulators," J. Quantum
Electronics, QE-3, p. 278 (1967) (with Ali Bahraman).
11.
"Diffusion of Impurities in Irradiated Silicon, "Trans. AIME,Vol. 245, p. 505 (1969).
12.
"Numerical Techniques for Lossy Films, "Surface Science, Vol. 16, pp.
97-103 (1969).
13
."Lifetime in Neutron-Irradiated Silicon Application to Devices, "IEEE
Trans. Nucl. Sci.,NS-17, pp. 26-33 (1970).
14.
"Neutron Radiation Effects in Junction
Field-Effect Transistors," IEEE Trans. on Nucl.
Sci., NS-18
(1971) (with S. S. Naik).
15. An
Introduction to Electronics, Holt, Rinehart and
16. "Neutron
Produced Trapping Centers in Junction Field
Effect Transistor," IEEE Trans. Nuc.
Sci., NS-18, 6, pp.
50-59 (1971) (with B. L. Gregory and S.
S. Naik).
17.
"A New Method for Voltage Breakdown
Determination in pn Junctions,"
Appl. Phys. Lett.,
19, 11, pp. 466-467 (1971) (with
P. Antognetti and R. R. Samuelson).
18.
"Role of Copper in the Degradation of GaAs Luminescent
Diodes," J. Appl. Phys., 43, 5, pp.
2383-2387 (1972) (with A. Bahraman).
19.
"The Temperature Variation of the Electron
Diffusion Length and the Internal Quantum Efficiency in GaAs Electroluminescent Diodes,"
20.
"Triggering Phenomena in Avalanche Diodes," IEEE
Trans. Elec. Devices, ED-19, pp. 1056-1060
(1972) (with R. R. Samuelson and
P. Antognetti).
21.
"Radiation Produced Trapping Effects in Devices," IEEE
Trans. Nuc. Sci., NS-19, pp. 347-354 (1972).
22.
"A One Transistor Memory Cell with Non-Destructive
Readout," Digest of Technical Papers,
23.
"Optical Properties of Pb1-xSnxTe Alloys," (with P. S. Cross), presented at the
International Conference on Narrow Gap Semiconductors, Nice (September
1973).
24.
"Measurement of Neutral Base Lifetime in
Neutron-Irradiated Transistors," IEEE Trans. on Nuclear
Science, NS-20, No. 6, pp. 266-273 (December 1973) (with M. M. Sanga).
25.
"Properties of Heavily Irradiated MOSFETS," IEEE
Trans. on Nuclear Science, NS-21, No. 6, pp.
124-129 (December 1974) (with E. T. Gaw).
26.
"Monolithic Measurement of Optical Gain and
Absorption in PbTe," J. Appl. Phys., Vol. 46, No. 2, pp. 952-954 (February
1975) (with P. S. Cross).
27.
"Theory of Optical-Gain Measurements," IEEE Jour.
Quantum Electronics, Vol. QE-11, No. 5, pp.
190-197 (May 1975) (with P. S. Cross).
28.
"Enter the 16,384-Bit RAM," Electronics, AR-20, pp. 116-121 (February 19, 1976) (with
J. E. Coe).
29.
"16K RAM Technology,"
30.
"A 16,384-Bit Dynamic RAM," IEEE Jour. Solid State
Circuits, Vol. SC-11, No. 5, pp. 570-574 (October 1976) (with C. N.
Ahlquist, J. R. Breivogel,
J. T. Koo, J. L. McCollum, and A. L. Renninger).
31.
"Get Ready for the New Generation of Dynamic RAM's,"
Evaluation Engineering, 32-35
(January/February 1977) (with R. Abbot, C. Barrett, J. Coe, and P. Spiegel).
32.
"Process for Forming a Low Resistance Interconnect in MOS N-Channel Silicon Gate Integrated
Circuits," U.S. Patent #4,013,489, issued
33.
"Si Materials Advances - The Challenge of High Resolution,"
AIME Annual Electronic Materials Symp.
(
34.
"The Fabrication of Microelectronics Circuits,"
Scientific American, 110-126 (September
1977).
35.
"Use of Simulation to Optimize Projection Printing Profiles,"
Proc. of the Symp. on
Electron and Ion Beam Science and Technology, Eighth International
Conference, The Electrochemical Society, Vol. 78-5, pp. 206-216 (1978)
(with A. R. Neureuther, M. O'Toole, and S. N. Nandgaonkar).
36.
"In-Situ Characterization of Positive Resist Development,"
Optical Engineering, Vol. 18, pp. 59-62
(January 1979).
37.
"A General Simulator for VLSI Lithography and Etching
Processes: Part I -
Application to Projection Lithography," IEEE Trans. of Elec.
Devices, Vol. ED-26, pp. 717-722 (April 1979) (with S. N. Nandgaonkar,
A. R. Neureuther, and M. M. O'Toole).
38.
"Carrier Recombination through Donors/Acceptors in Heavily Doped
Silicon", Appl. Phys. Lett. 35, pp. 636-639 (
39.
"The Oxidation of Polysilicon," presented in Spring Meeting,
Electrochemical Society,
40.
"Simulation and Modeling of Profiles in Lithography and Etching,"
published in IEEE Conference Record, Third Biennial
University/Industry/Government Microelectronics Symposium, pp. 116-122
(May 1979) (with A. R. Neureuther).
41.
"Simulation of Dry Etched Line Edge Profiles," J. Vac. Sci. Technol.,
16(6), pp. 1767-1771 (November/December 1979) (with J. L. Reynolds
and A. R. Neureuther).
42.
"A Study of a High Performance Projection Stepper Lens,"
International Conference on Microcircuit Engineering 79 -
Microstructure Fabrication,
43.
"A Study of a High Performance Projection Stepper Lens," Kodak Microelectronics Seminar,
44.
"A MESFET Model for Circuit Analysis," Solid-State
Electronics, Vol. 23, pp. 121-126 (February 1980) (with C. D. Hartgring and T-Y Chiu).
45.
"The Limits of Optical Lithography," in Device
Impact of New Microfabrication Technologies, Summer Course, Katholieke Universitat, Leuven, Vol. II (June 1980).
46.
"New Dimensions in Optical Lithography," Device Research Conference, IEEE
Electron Device Society,
47.
"A General Simulator for VLSI Lithography and Etching
Processes: Part II -
Application to Deposition and Etching," IEEE Trans. Electron
Devices, Vol. ED-27, No. 8, pp. 1455-1459 (August 1980) (with A. R.
Neureuther, C. Sung, J. L. Reynolds, and S. N. Nandgaonkar).
48.
"AZ 1350H as a Negative Electron Resist by Image Reversal,"
Proceedings, Microcircuit Engineering 80 (September
1980).
49.
"Soft Failures in Electronic Systems from Ionizing Radiation," ECS Meeting,
50.
"A High Resolution Negative Electron Resist by Image Reversal,"
IEEE Electron Device Letters, Vol. EDL-1,
No. 10, pp. 217-219 (October 1980) (with
51.
"A 1 um Process: Linewidth
Control Using 10:1 Projection Lithography," Technical Digest, International Electron Device Meeting, pp. 429-432
(December 1980) (with R. Sigusch, K. H. Horninger, W. A. Mueller, and D. Widmann).
52.
"Factors Affecting Linewidth Control Including Multiple
Wavelength Exposure and Chromatic Aberration,"
Semiconductor Microlithography VI, SPIE Vol. 275, pp. 110-116 (May
1981) (with P. K. Jain and A. R. Neureuther).
53.
"Projection Lithography with High Numerical Aperture Optics,"
54.
"Optical Requirements for Projection Lithography,"
Solid-State Electronics, Vol. 24, No. 10,
pp. 975-980 (1981) (with A. R. Neureuther and
55.
"Selective Oxidation Technologies for High Density MOS,"
IEEE Electron Device Letters, Vol. EDL-2,
No. 10, pp. 244-247 (1981) (with J. Hui, T. Y.
Chiu, and S. Wong).
56.
"Sheet Resistance Junction Depth Relationships in Implanted Arsenic
Diffusion," IEEE Electron Device Letters,
Vol. EDL-2, No. 10, pp. 275-277 (1981) (with T. M. Liu).
57.
"Contrast in High-Performance Projection Optics,"
2 Proceedings, Kodak Microelectronics Seminar, Interface 81,
58.
"Alignment Signals from Symmetrical Silicon Marks for Electron Beam
Lithography," Proceedings, Kodak Microelectronics Seminar,
Interface 81,
59.
"Influence of Axial Chromatic Aberration in Projection
Printing," IEEE Trans. on Electron Devices, Vol. ED-28, No.
11, pp. 1410-1416 (1981) (with P. Jain and A. R. Neureuther).
60.
"Reduction of Linewidth Variations in Optical Projection
Printing," Proceedings, Microcircuit Engineering (Sept
1981) (with L. Mader and D. Widmann).
61.
"Sealed-Interface Local Oxidation Technology,"
Digest, International Electron Devices Meeting,
62.
"Soft Error Studies Using a Scanning Source,"
Proceedings, International Reliability Physics Symposium,
63.
"Sealed-Interface Local Oxidation Technology," IEEE
Trans. Electron Dev., ED-29, pp. 554-560 (1982) (with J. C-H. Hui, T-Y.
Chiu, and S-W. S. Wong).
64.
"Resist Characterization: Procedures, Parameters,
and Profiles," SPIE Vol 334 Optical Lithography-Technology for the
Mid-1980s, pp. 182-187 (1982) (with M. Exterkamp,
W. Wong, H. Damar, C. H. Ting and A. R.
Neureuther).
65. "Towards
Finer Lines: Process Control in Optical Lithography," Semicon West 1982 Technical Program Proceedings, pp.
108-113 (May 1982) (with P. Antognetti and C. Fasce).
66. "A
JMOS Transistor Fabricated with 100 Angstrom Low Pressure Nitrided-Oxide Gate Dielectric," 40th Annual
Device Research Conference, Fort Collins (June 21-23, 1982) (with C.
G. Sodini, S. S. Wong, and T. W. Ekstedt).
67. "Optical
and Deep UV Lithography," 2 Nato
Advanced Study Institute on Process and Device Simulation For
MOS-VLSI, Urbino (July 1982).
68. "Low
Energy Implantation of Nitrogen and Ammonia
into Silicon," 4th International Conference on Ion
Implantation, Berchtesgaden (Sept,
1982) (with T. Y. Chiu and C. Hovland).
69. "Alpha
Particle Collimator for Micron-sized Beam," Rev. Sci. Instrum 53, pp.
1581-1585 (Oct 1982) (with F. J. Henley).
70. "Process
Parameter Control in Optical Lithography,"
Digest of
Technical Papers, 14th International Conf on Solid State Devices,
Tokyo (Sept 1982) (with C. Fasce and P. Antognetti).
71. "Characterization
of Resist Development: Models, Equipment, Method, and Experimental
Results," Proceedings, Kodak Microelectronics Seminar,
Interface 82, pp. 100-104, San Diego (Oct 1982) (with D. J. Kim and
A. R. Neureuther).
72. "Optical
Lithography, Directions and Limits," Bull. Amer. Physical
Soc., Vol 27, No. 8, Part 1, p. 870 (Oct
1982).
73. "Isolation
Technology for Scaled MOS VLSI," Digest, International Electron
Devices Meeting (Dec 1982).
74. "Electrical
Properties of Sealed-Interface Local-Oxidation Isolated
Devices," Digest, International Electron Devices
Meeting (Dec. 1982) (with J. Hui, T. Y.
Chiu, and S. Wong).
75. "Channeling
Effect of Low Energy Boron Implant in (100) Silicon," IEEE
Electron Device Letters, Vol. EDL-4, pp. 59-62 (March 1983) (with
T. M. Liu).
76. "CMOS
Latch-Up Characterization Using a Laser Scanner," Proceedings,
21st Annual International Reliability Physics Symposium, Phoenix, Arizona,
pp. 122-130 (April 1983) (with F. J. Henley and M. H. Chi).
77. "Two
Dimensional Oxidation Mechanisms in Local Oxidation
Processes," Electrochemical Society Spring Meeting 1983,
Extended Abstracts, pp. 591-592 (May 1983) (with J. C. H. Hui).
78. "Very
Shallow Ion-Implanted Boron Junction," Electrochemical Society
Spring Meeting 1983, Extended Abstracts, pp. 631-632 (May 1983) (with
T. M. Liu).
79. "Low-Energy
Implantation of Nitrogen and Ammonia into
Silicon," Electrochemical Society Spring Meeting 1983, Extended
Abstracts pp. 204-205 (May 1983) (with T. Y. Chiu).
80. "Threshold
Shift from As Implantation of SiO2," Electrochemical
Society Spring Meeting 1983, Extended Abstracts, pp. 629-630 (May
1982) (with R. Kazerounian).
81. "Composition,
Electrical Conduction, and Charge-Trapping Properties of Nitrided-Oxide and Re-Oxidized Nitrided-Oxide," Electrochemical
Society Spring Meeting 1983, Extended Abstracts, pp. 200-201 (May
1983) (with S. S. Wong, S. H. Kwan, and H. R. Grinolds).
82. "Isolation
Technology for Scaled MOS VLSI," Technical Proceedings, Semicon West, pp. 33-39 (May 1983).
83. "Alignment
Signals from Symmetrical Silicon Marks for Electron Beam
Lithography," J. Electrochem. Soc.:
Solid-State Science & Technology, pp. 939-944 (April 1983) (with Y-C
Lin and A.R. Neureuther).
84. "CODMOS
- A Depletion Load Technology with Fixed Oxide Charge," IEEE
Device Research Conference, Burlington VT (June 1984) (with R. Kazerounian).
85. "Low
Pressure Nitrided-Oxide as a Thin Gate Dielectric for
MOSFET's," J. Electrochem.
Soci: Solid-State Science & Technology, pp.
1139-1144 (May 1983) (with S.S. Wong, C.G. Sodini,
T.W. Ekstedt, H.R. Grinolds,
K.H. Jackson, and S.H. Kwan).
86. "Contrast
Studies in High-Performance Projection Optics," IEEE Trans. Elec Devices, pp. 1474-1479 (November 1983) (with
W. Arden H. Binder and C. Ting).
87. "Characterization
and Modeling of a Resist With Built-In
Induction Effect," Proceedings, Kodak Microelectronics
Seminar, Interface 82, San Diego, pp. 112-117 (October 1983) (with D.J.
Kim and A.R. Neureuther).
88. "Anodic
Si3N4 Grown in a New Plasma
Reactor," Digest, Technical Proceedings, 1983 Symposium on VLSI
Technology, Maui, pp. 88-89 (with S.S. Wong and H.R. Grinolds).
89. "Citation
Classic - Interface States in Abrupt Semiconductor
Heterojunctions," Current Contents, p. 22 (November 14,
1983) (with A.G. Milnes).
90. "A
JMOS Transistor Fabricated with 100A Low Pressure Nitrided-Oxide
Gate Dielectric," IEEE Trans Elec
Dev., pp. 17-21 (January 1984) (with C. G. Sodini,
S. S. Wong, T. W. Ekstedt, and H. R. Grinolds).
91. Process
and Device Simulation for MOS-VLSI Circuits, (book), (Co-edited: D.A.
Antoniadis, R.W. Dutton, and D. Antognetti), Martinus Nijhoff Publishers
(1983).
92. "Composition
and Electrical Properties of Nitrided-Oxide and
Re-Oxidized Nitrided-Oxide," Silicon
Nitride Thin Insulating Films, (Eds. V.J. Kapoor
and H.J. Stein), Electrochemical Society, Pennington NJ (1983) (with
S.S. Wong, S.H. Kwan and H.R. Grinolds).
93. "Low
Energy Implantation of Nitrogen and Ammonia into
Silicon," Silicon Nitride Thin Insulating Films, (Eds.
V.J. Kapoor and H.J. Stein), Electrochemical
Society, Pennington NJ, pp. 366-381 (1983) (with T.Y. Chiu).
94. "Low
Energy Implantation of Nitrogen and Ammonia into
Silicon," Springer Series in Electrophysics, Volume
II: Ion Implantation: Equipment and
Techniques, (Eds. H. Ryssel and H. Glawischnig), Springer-Verlag
Berlin Heidelberg, Germany, pp. 465-472 (1983) (with T.Y. Chiu and C.
Hovland).
95. "1
um Lithography, Optical and Resist-Limited Control," Session I,
Patterning - SEMICON/Europa Semiconductor Proc.
& Equip. Symposium, Zurich (March 13-15, 1984) (with I.S. Hsu and D.J.
Kim).
96. "A
Multi-Wafer Plasma System for Anodic Nitridation and
Oxidation," Electron Device Letters, pp. 175-177 (May
1984) (with S.S. Wong).
97. "Determining
Specific Contact Resistivity from Contact End Resistance
Measurements," IEEE Electron Device Letters, Vol. EDL-5,
No. 5, pp. 178-180 (May 1984) (with J.G.J. Chern).
98. "Anodic
Nitridation of Silicon-Dioxide," Electronic
Materials Conference (June 15, 1984) (with S.S. Wong).
99. Electrical
Engineering: An Introduction, (book), CBS College
Publishing, (1984) (with S.E. Schwarz).
100. "Shallow
Boron Junctions Implanted in Silicon Through a Surface Oxide,"
Electron Device Letters, Vol. EDL-5, pp. 299-301 (Aug. 1984) (with
T.M. Liu).
101. "Development of Positive
Photoresist," IEEE Transactions on Elect. Devices, Vol.
ED-31, pp. 11730-1735 (Dec. 1984) (with D.J. Kim, and A.R.
Neureuther).
102. "Contact
Electromigration Induced Leakage Failure in
Al/N+ SI and P+SI Contacts," 2 The Electrochemical
Society, Symposium on Electromigration of
Metals, October 7-12 (1984) (with J. Chern and
N. Cheung).
103. "The
Material Properties of Silicon Nitride Formed by Low Energy Nitrogen Ion-Implantation," J.
Electrochemical Society, Vol 131, pp. 2110-2115
(Sept. 1984) (with T. Chiu and C. Hovland).
104. "MOS
Isolation Technology," 1985 European Solid State Device
Conference Lille (Sept. 1985) (with Y. Shacham-Diamand, P.L. Pai, K.
Young and P. Sutardja).
105. "Planarization with Spin-on-Glass/LPCVD
Composite Films," 3 Digest of Papers, 1985
International Symposium on VLSI Technology, Uobe,
Japan, pp. 52-53 (May 14-16, 1985) (with F. Dupuis and Y. Shacham-Diamand).
106. "Anodic
Nitridation of Silicon and Silicon
Dioxide," IEEE Transactions on Electron Devices, Vol.
ED-32, No. 5, pp. 978-982 (May 1985) (with S. Simon Wong).
107. "Resist
Modeling and Profile Simulation," Solid State
Technology, pp. 139-144 (May 1985) (with A.R. Neureuther).
108. "Plasma-Enhanced
Nitridation of SiO2--Bias
Effects," Proceedings of Technical Papers, 1985
International Symposium on VLSI Technology, Systems and
Applications, Taipei, Taiwan, pp. 291-294 (May 8-10, 1985) (with K.
Young).
109. "Proximity
Effects and Printability of Defects in GexSe1- x
Resist," J. Vac. Sci.
Technology, Vol. 3, No 1, pp. 310-313 (January/February, 1985) (with W.
Leung and A.R. Neureuther).
110. "The
Electrical Properties of Hg-sensitized PHOTOX Deposited at 80 C," 1985
Electronics Materials Conference, Boulder, Colorado (June 19-21, 1985)
(with T. Chuh, Y. Shacham-Diamand
and Pei-Lin Pai).
111. "The
Effect of Hydrogen on Boron Diffusion in SiO2," 1985
Electronics Materials Conference, Boulder, Colorado (June 19-21,
1985) (with Y. Shacham-Diamand).
112. "Simulation
of Lithography," Chapter 3 in Process and Device
Modeling, W. L. Engl, Editor, Elsevier Science
Publishers B.V. (1986) (with A.R. Neureuther).
113. "Contact-Electromigration Induced Leakage Failure
in Aluminum-Silicon to Silcon
Contacts," IEEE Trans. Elec. Devices, Vol. ED-32, No. 7,
(July 1985) (with J. Chern and N. Cheung).
114. "High
Resolution Additive Thin Film Patterning," 2 Interface
85, Kodak Microelectronics Seminar, San Diego, CA (November,
1985) (with P.L. Pai and Y. Shacham-Diamand).
115. "The
Advanced Berkeley CMOS Process," VLSI Workshop on Test
Structures, Long Beach, CA (February 1986) (with Y. Shacham-Diamand and A.R. Neureuther).
116. "Inorganic
Resist Phenomena and Their Applications to Projection
Lithography," IEEE Trans. on Electron Devices, Vol. ED-33,
No. 2 (February 1986) (with W. Leung and A.R. Neureuther).
117. "The
Properties of Sub-100 A Thin-gate Oxide-Nitride Stacked
Films," VLSI Symposium, San Diego, CA (May 1986) (with K.
Young).
118. "Two-Dimensional Simulation
of Glass Reflow and Silicon Oxidation," VLSI
Symposium, San Diego, CA (May 1986) (with P. Sutardja
and Y. Shacham-Diamand).
119. "A
new 10:1 Photomask Reduction
Camera," SPIE Symposium on Microlithography, Santa Clara,
CA (March 1986) (with K. Voros and P. Sutardja).
120. "The
Effect of Hydrogen on Boron Diffusion in SiO2," Transactions
of the Metallurgical Society of AIME (1986) (with Y. Shacham-Diamand).
121. "A
High Resolution Lift-Off Technology for
VLSI Interconnections," 1986 Proceedings Third
International IEEE VLSI Multilevel Interconnection
Conference, Santa Clara, CA (June 9-10, 1986) (with P.L. Pai and Y. Shacham-Diamand).
122. "Electromigration in Al/SI Contacts--Induced Open-Circuit Failure," IEEE
Trans on Electron Devices, Vol. ED-33, No. 9 (September 1986) (with
J.G.J. Chern and N. Cheung).
123. "Electrical Properties
of Hg-Sensitized 'Photox' Oxide Layers Deposited
at 80C", Solid-State Electronics, Vol. 30, No. 2, pp.
227-233 (1987) (with Y. Shacham-Diamand and T. Chuh).
124. "The
Use of Contrast Enhancement Layers to Improve the Effective Contrast of
Positive Photoresist," IEEE Transactions of Electron
Devices, Vol. ED-34, No. 2 (February 1987).
125. "Get
Submicrometer Resolution with Optical
Lithography," Research & Development, pp. 92-95,
(January 1987) (with James A. Schoeffel).
126. "Modeling
of Stress-Effects in Silicon Oxidation including the Non-Linear Viscosity
of Oxide", IEDM Digest of Technical Papers, pp. 264-267,
(December 1987) (with Pantas Sutardja,
D.B. Kao).
127. "Charge
Transport and Trapping Model for Scaled Nitride-Oxide Stacked
Films", Applied Surface Science 30, North-Holland,
Amsterdam, pp. 171-179 (1987) (with K.K. Young, C. Hu).
128. "Silicon
Epitaxy in an LPCVD Furnace", IEEE VLSI International Technical
Digest, pp. 79-80, VLSI Symposium, San Diego (May 1988) (with Carl Galewski).
129. "A
Lift-off Process Using Edge Detection (LOPED)", IEEE
Transactions on Semiconductor Manufacturing", Vol. 1, Number 1, pp.
3-9 (Feb. 1988) (with Pei-Lin Pai).
130. "High-Resolution
Imaging Using Focused-Image Holography with
Wave-Front Conjugation", Proceedings of SPIE - The
International Society of Optical Engineering, Vol. 922, pp. 18-25 (March
1988) with Ginetto Addiego).
131. "A
Compact Optical Imaging System for Resist Process and
Lithography Research", Proceedings of SPIE, Vol.
92a, pp. 471-475 (March 1988) (with John H. Bruning).
132. "A
Framework for Multilevel Interconnection Technology", VLSI
Multilevel Interconnection Conference", pp. 108-114 (June 1988) (with
Pei-Lin Pai, Chiu H.
Ting).
133. "Ion
Transit Through Capacitively Coupled Ar Sheaths: Ion Current and Energy
Distribution", Journal of Applied Physics, pp. 1367-1371,
(February 1988) (with W.M. Greene, D.W. Hess).
134. "Comparison
of Low-Pressure and Plasma-Enhanced Chemical Vapor Deposited Tungsten-Thin
Films", Applied Physics Letters, pp. 113-115, (Mar/Apr
1988) (with W.M. Greene, D.W. Hess)
135. "Test
Patterns and Simulation Software for Characterization of
Optical Projection Printing", Proceedings of KTI
Microelectronics Seminar pp. 113-122, (November 1988) (with A.R.
Neureuther, B. Huynh, K.K.H. Toh, R. Ferguson,
W.E. Haller and D. Sutija).
136. "Simulation
of Back-Of-The-Line Processes with SAMPLE", Proceedings of KTI
Microelectronics Seminar pp. 261-281, (November 1988) (with Don E. Lyons,
Stephen F. Meier, LeRoy Winemberg,
A.R. Neureuther).
137. "Ion-bombardment-enhanced
Plasma Etching of Tungsten with NF3O2," J.
Vac. Sci., Technol. B6 pp.
1570-1572, Sep/Oct 1988, (with S.M. Greene and D.W. Hess).
138. "Plasma-
and Gas-surface Interactions During the Chemical Vapor Deposition of
Tungsten from H2WF6," Journal of Applied Physcis, 64 (9), pp. 4696-4703, November
1988, (with W.M. Greene, and D.W. Hess).
139. "Ion
Current, Energy Distribution, and Radical Species Detection in RF Plasmas
by Cylindrical Mirror Analyzer Quadrupole Mass
Spectroscopy", Materials Research Society Symposium
Proceedings, vol. 117, pp. 61-65, 1988.
140. "Low
Temperature Selective Epitaxy in a Hot-Wall
Reactor", Proceedings of SEMICON/EUROPA, pp.
67-77, (March 1989) (with Carl Galewski).
141. "Automated
Resist Modeling and Simulation-Calibrated Test Patterns for Characterization
of Optical Projection Printing", Proceedings of SRC Techcon '88 pp. 304-307, 1988 (with A.R. Neureuther,
B. Huynh, K.K.H. Toh, W.R. Bell, C. Zee, G. Misium, R. Ferguson, W.E. Haller and D. Sutija). Oct.
12, 1988.
142. "The
Diffusion of Ion-implanted Arsenic in thermally Grown SiO2" Journal
of Electronic Materials, Jan 1989. (with Yosi Shacham-Diamand and Reza Kazerounian)
143. "Deep-UV
Photolithography with a Small-Field, 0.6 N.A.
Microstepper", SPIE Optical/Laser Microlithography II
Proceedings, vol. 1088, pp. 471-475, 1989, (with C.A. Spence, W.N. Partlo, J.H. Bruning, D.A. Markle
and R. Hsu.)
144. "Diffraction
Limited Imaging Using Incoherently Illuminated
Holographic Masks", SPIE Optical/Laser Microlithography II
Proceedings, vol. 1088, pp. 296-303, March 1989 (with G. Addiego)
145, "Effects
of Line Narrowing and Collimation on Excimer Radiation at 248
nm", SPIE Optical/Laser Microlithography II, vol. 1088,
pp. 448-461, March 1989, (with W.N. Partlo, C.A.
Spence).
146. "Characterization
of Deep-UV Pellicles for 248 nm Excimer Exposure", Proceedings
of the KTI Microelectronics Seminar, pp. 107-121, San Diego, Nov. 6-7,
1989 (with W.N. Partlo, S. Flynn).
147. "Process
Simulation and Experiment for RC-Parasitics in
Multilevel Metallization", IEEE VLSI Multilevel
Interconnect Conference Proceedings, , pp. 299-305, Santa Clara, June
11-14, 1989, (with E.W. Scheckler, D.E. Lyons,
and A.R. Neureuther).
148. "An
Experimental Characterization System for Deep Ultra-Violet (UV) Photoresists", SPIE,
Advances in Resist Technology and Processing VI, vol. 1086, pp. 282-288,
1989, (with D.M. Drako, W.N. Partlo
and A.R. Neureuther).
149. "Characterization
and Modeling of Materials for Photolithography
Simulation", Solid State Electronics, vol. 33, no. 6, pp.
625-638, June 1990. (with C.A. Spence, R.A. Ferguson, and A.R.
Neureuther).
150. "Exploratory
Test Structures for Image Evaluation in Optical
Projection Printing", SPIE Optical/Laser Microlithography
II Proceedings, vol. 1088, pp. 83-87 March 1989, (with A.R. Neureuther,
K.K.H. Toh, J.E. Fleischman, D. Yu, G. Misium, B. Huynh, and B. Uathavikul).
151. "Characterization
of UV Resist for 248nm Lithography", SPIE Proceedings, Advances
in Resist Technology and Processing VI, vol. 1086, pp. 502-506, 1989,
(with Yosi Y. Shacham-Diamand,
and W.N. Partlo).
152. "Characterization
Methods for Excimer Exposure of Deep-UV Pellicles", SPIE 1990
Symposium on Microlithography, March 1990, (with W.N. Partlo).
153. "Modeling
of Stress Effects in Silicon Oxidation", IEEE Transactions on
Electron Devices, vol. 36, no. 11, pp. 2415-2421, November 1989, (with P. Sutardja)
154. "Dynamic
Measurements of Film Thickness Over Local Topography in
Spin Coating", 1990 International Symposium on the Mechanics
of Thin-Film Coating (AlChE, Spring National
Meeting, Orlando, FL, March 1990, & Applied Physics
Letters, June 1990 (with L.M. Manske and D.B.
Graves).
155. "Silicon
Wafer Preparation for Low-Temperature Selective Epitaxial
Growth", IEEE Transactions on Semiconductor
Manufacturing, vol. 3, no. 3, pp. 93-98, August 1990, (with C. Galewski and J.C. Lou.)
156. "Construction
and Characterization of a High-NA Deep-UV Projection Lithography
System", SRC TECHCON '90 Technical Program's Extended Abstract
Volume, pp. 171-174, October 16-18, 1990, San Jose, CA, (with
C. A. Spence, R. Hsu and A. Pfau).
157. "A
General Approach to the Modeling and Simulation of Advanced
Deep-UV Resists", SRC TECHCON '90 Technical Program's
Extended Abstract Volume, pp. 175-178, October 16-18, 1990, San Jose,
CA, (with R.A. Ferguson, C.A. Spence, J.M. Hutchinson, and A.R.
Neureuther).
158. Carl
Galewski, Jen-Chung Lou, and William G.
Oldham, "Silicon Wafer Preparation for Low-Temperature Selective Epitaxial Growth", IEEE Trans. on
Semiconductor Manufacturing, Vol 3, No 3,
pp93-98, August 1990
159. Jen-Chung
Lou, Carl Galewski, and William G.
Oldham, "Dichlorsilane effects on
low-temperature selective silicon epitaxy", Appl. Phys. Lett, 58, pp59-61,
Jan, 1991
160. William
N. Partlo and William G.
Oldham, "Transmission Measurements of Pellicles for Deep-UV
Lithography" IEEE Trans. on Semiconductor Manufacturing, Vol 4, no. 2, pp128-133, May 1991
161. William
G. Oldham, Christopher A. Spence, Richard Hsu, and Anton Pfau, "Construction
and Characterization of a High-NA Deep-UV Projection Lithography
System," SRC TECHCON '90 San Jose, CA pp 171-174, Extended
Abstracts Volume, Oct 16, 1990.
162. Richard
A. Ferguson, Chris A. Spence, John M. Hutchinson, Andrew R.
Neureuther, and William G. Oldham, "A General Approach to the
Modeling and Simulation of Advanced Deep-UV Resists", SRC
TECHCON '90 San Jose, CA pp 175-178, Extended Abstracts Volume, Oct 16,
1990.
163. A.K.Pfau, W. G. Oldham, A. R. Neureuther, "Exploration
of Fabrication Techniques for Phase-Shifting Masks" PROCEEDINGS
SPIE 1991 SYMPOSIUM ON MICROLITHOGRAPHY, San Jose CA, March 1991
164. Jen-Chung
Lou, William G. Oldham, Harry Kawoyoshi, and Peiching Ling, "The Selective Epitaxy of Silicon
at Low Temperatures," 1991 Spring Meeting Material Research
Society, Pittsburgh, May 1, 1991
165. William
N. Partlo, and William G. Oldham, "Reducing
coherence in a 5th harmonic YAG source (213nm) for use in
microlithography" 35th Internation
Symposium on Electron, Ion, and Photon Beams, Seattle WA, May 28,
1991.
166. J.
E. Moon, C. Galewski, T. Garfinkel,
M. Wong, W. G. Oldham, P. K. Ko, and C. Hu "A Deep-Submicrometer
Raised Source/Drain LDD Structure Fabricated Using Hot-Wall
Epitaxy" 1991 International Symposium on VLSI Technology,
Systems, and Applications, Proceedings, pp117-121, May 22-24, 1991
167. A.
K. Pfau, W. G. Oldham, and A. R.
Neureuther, "Effects of Sizing, Alignment, and Defects on Projection
Printing with Phase-Shifting Masks", Digest, 1991
Symposium on VLSI Technology, pp 93-94, Oiso
Japan, May 1991
168. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham "Reliability of
Copper Metallization on Silicon-Dioxide", Proceedings IEEE VLSI
Multilevel Interconnection Conference, pp 109-115, June 1991
169. Jen-Cheung
Lou, William G. Oldham, Harry Kawayoshi and Peiching Ling, "Process and Defect Studies in
Low-Temperature Selective Epitaxial
Silicon", 1991 Electronic Material Conference, Boulder
Colorado, June, 1991.
170. A.
R. Neureuther, and W. G. Oldham "Resist Characterization and
Lithography Simulation" (invited presentation) Workshop on
Soft X-Ray and Projection Lithography, Monterey, Ca April 1991
171. W.
N. Partlo and W. G. Oldham, "Reducing Coherence
in a 5th Harmonic YAG Source (213nm) for Use in Microlithography,"
J. Vac. Sci.
Tech. B, pp3126-3131, Nov 1991.
172. W.
N. Partlo and W. G. Oldham, "213nm
Lithography," presented at the IEEE Workshop on Advanced Lithography,
Hawaii, August 1991,
173. A.
K. Pfau, R. Hsu, W. G. Oldham, "A
Two-Dimensional High-Resolution Stepper Image
Monitor", Proceedings, SPIE Symposium on Optical/Laser
Microlithography V, SPIE VOL 1674, pp 182-192, 1992.
174. J.
C. Lou, W. G. Oldham, H. Kawayoshi, and P. C.
Ling, "The Surface Morphology of Selectively Grown Epitaxial Silicon", J. Appl.
Phys. V70, pp685-692, July 15, 1991.
175. C. Galewski and W. G. Oldham "A Hot-Wall
Low-Pressure Reactor for Selective Silicon Epitaxy - Reactor Design and
Experimental Results", J. Electrochem.
Soc. V139, pp 543-548, Feb 1992.
176. J.
C. Lou, W. G. Oldham, H. Kawayoshi, and P. C.
Ling, "Plasma Etch Effects on Low-Temperature Selective Epitaxial Growth of Silicon" J. Appl. Phys. V71, pp3225-3230, April 1992.
177. J.
C. Lou, W. G. Oldham, H. Kawayoshi, and P. C.
Ling, "Fluorine Ion-Induced Enhancement of Oxide Removal Prior to
Silicon Epitaxial Growth", Appl. Phys. Lett.
V60, pp1232-1234, Mar 1992.
178.
A.K. Pfau, W. G. Oldham, and A. R. Neureuther,
"Exploration of Fabrication Techniques for Phase Shifting
Masks", SPIE VOL 1463, pp 124-134, 1991
179. A.
S. Weng, R. Gronsky, J. C.
Lou and W. G. Oldham, "SOI Interface Structures in Selective Epitaxial Growth", Proceedings, 1992
Materials Research Society Symposium, Vol 238,
pp707-712, 1992.
180. C. Galewski and W. G. Oldham, "Modeling of a High Throuput Hot-Wall Reactor for Selective Epitaxial
Growth of Silicon", IEEE Trans. Semicond.
Manufacturing, V5, pp169-179, August 1992.
181. A.K.
Pfau, W.N. Partlo, R. Hsu,
and W. G. Oldham, "Quartz inhomogeneity
effects in diffraction-limited deep
ultraviolet imaging", Applied Optics, vol. 31, pp
6658-61, Nov. 1992.
182. J.
Hutchinson, K. Kalpakjian, R. Schenker, W. G.
Oldham, "Evaluation of Liquid Silylated
Resists for 213nm Exposure" Proceedings SPIE Advances in Resist
Technology and Processing X, Vol 1925 pp414-425,
March 1993.
183. C.H.
Fields, W.G. Oldham, and R.J. Bojko "The
Use of Amorphous Silicon for Deep UV Masks" Proceedings SPIE
Optical/Laser Microlithography, Vol
1927 pp727-735, March 1993.
184. W.
N. Partlo and W. G. Oldham, "A Diffuser
speckle model: application to multiple moving
diffusers", Applied Optics, vol
32, pp 3009-14, June 1993.
185. J.
M. Hutchinson, W. N. Partlo, R. Hsu, and W. G.
Oldham, "213 nm lithography", Microelectronic
Engineering, vol. 21, pp 15-18, April 1993 (Microcircuit Engineering
92. International Conference on Microfabrication, Erlangen,
Germany, 21-24 Sept. 1992).
186. Y. Shacham-Diamand, A. Dedhia, D. Hoffstetter, and W. G. Oldham "Copper transport
in thermal SiO2", Journal of the Electrochemical
Society, vol.140, pp2427-32, August 1993.
187. C.H.
Fields, W.N. Partlo, and W.G.
Oldham, "Aerial Image Measurement on a Commercial
Stepper", TECHCON'93 Extended Abstract Vol, pp78-80,
Sept 1993
188. W.
N. Partlo, C. H. Fields, and W. G.
Oldham "Direct Aerial Image Measurement as a method of testing
high numerical aperture microlithographic
lenses", "J. Vac. Sci. and Technol. Vol B11, pp 2686-2691, Nov 1993.
189. Kent
M. Kalpakjian, M. A. Lieberman,and
W. G. Oldham, "High frequency reactive ion etching of silylated photoresist", J. Vac. Sci. and Technol.
Vol B12 pp 1351-1361, May 1994.
190. R.
Schenker, P. Schermerhorn, and W. G.
Oldham, "Deep-UV Damage to Fused Silica", J. Vac. Science and Technology B, Vol
12 pp 3275-79, 1994, paper given at 38th International Electron, Ion,
Photon Beams Conference, New Orleans LA, June 1994.
191. G. Wallraff, J. Hutchinson, W. Hinsberg,
F. Houle, P. Seidel, R. Johnson, and W. G.
Oldham, "Thermal and Acid-Catalyzed Deprotection
Kinetics in Deep UV Resist Materials", J. Vac.
Science and Technology B , Vol 12, pp 3857-62,
1994, paper given at 38th International Electron, Ion, Photon Beams
Conference, New Orleans LA, June 1994.
192. Y.
C. Shih, J. B. Liu, W. G. Oldham, and R. Gronsky "Epitaxial lateral overgrowth of silicon by chemical vapor
deposition on ultrathin oxide
layers" Appl Phys Lett.
Vol 65, pp 1142-1144, August 1994.
193. Y.
C. Shih, J. C. Lou, and W. G. Oldham, "Seam line defects in silicon-on-insulator
by merged epitaxial lateral
overgrowth, Appl. Phys. Lett. Vol 65, pp1638-1640,
Sept 1994.
194. R.
Schenker, L. Eichner, H. Vaidya,
W.G. Oldham, S Vaidya, "Comparison of
UV-damage properties for various fused silica types", Symposium
on Optical Materials for High Power Lasers, Denver, Oct. 1994.
195. Y.
C. Shih, G. G. Zang, C. M. Hu,
and W. G. Oldham, "Thin Dielectric Degradation during silicon
Selective Epitaxial Growth Process, Appl. Phys. Lett, V67, pp
2040-42, Oct, 1995
196. Bokor, J.; Neureuther, A.R.; Oldham, W.G. Advanced lithography for ULSI. IEEE Circuits and Devices Magazine, vol.12, (no.1):11-15, Jan. 1996.
197. Hutchinson, J.M.; Wallraff, G.M.; Hinsberg, W.D.; Opitz, J.; and others "Characterization and modeling of a chemically amplified resist for ArF lithography."(Advances in Resist Technology and Processing XII, Santa Clara, CA, USA, 20-22 Feb. 1995). Proceedings of the SPIE - The International Society for Optical Engineering, 1995, vol.2438:486-95.
198. Richard Schenker, Lou Eichner, Hem Vaidya, Sheila Vaidya, and William Oldham, "Degradation of fused silica at 193-nm and 213-nm," 1995 SPIE Microlithography Conf., Optical/Laser Microlithography VIII, Vol. 2440, pp. 118-125, 1995.
199.
Schenker, R.; Oldham, W., "Effects of compaction on 193 nm lithographic
system performance". Journal of Vacuum Science & Technology B
vol.14, no.6 Nov.-Dec. 1996. p.3709-13.
200. Fields,
C.H.; Oldham, W.G.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Stulen, R.H. Direct
aerial image measurements to evaluate the performance of an extreme ultraviolet
projection lithography system. Journal of Vacuum Science & Technology B
vol.14, no.6, Nov.-Dec. 1996. p.4000-3.
201. R. Schenker, F. Piao, W. Oldham, "Material Limitations to 193-nm Lithographic System Lifetimes," SPIE Vol. 2726, Optical Microlithography IX, 1996.
202.
Schenker, R.E.; Oldham, W.G. Ultraviolet-induced densification in fused silica.
Journal of Applied Physics, vol.82, no.3
, p.1065-71, Aug. 1997.
203. Oldham,
W.G.; Schenker, R.E. 193-nm lithographic system lifetimes as limited by UV
compaction. Solid State Technology, vol.40,
no.4 , PennWell Publishing, April 1997.
p.95-6, 98, 100, 102.
204.
Schenker, R.; Oldham, W.
Compaction-limited system lifetime in 193-mn optical lithography,
MICROELECTRONIC ENGINEERING, MAR, 1998, V42:141-144.
205.
Schenker, R.; Oldham, W. Damage-limited
lifetime of 193-nm lithography tools as a function of system variables, APPLIED
OPTICS, FEB 1, 1998, V37(N4):733-738.
206.
Schenker, R.E.; Oldham, W,G. Ultraviolet-induced
densification in fused silica, JOURNAL OF APPLIED PHYSICS, AUG 1, 1997,
V82(N3):1065-1071.
207. Schenker, R.; Piao, F.; Oldham, W.G. "Durability of experimental fused silicas to 193-nm-induced compaction", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.44-53.
208. Fields, C.H.; Ray-Chaudhuri, A.K.; Krenz, K.D.; Oldham, W.G.; Stulen, R.H. "Measurement of mid-spatial frequency scatter in extreme ultraviolet lithography systems using direct aerial image measurements", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3048, (Emerging Lithographic Technologies, SantaClara, CA, USA, 10-11 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.356-67.
209. Piao, F.; Schenker, R.; Oldham, W.G. "Temperature dependence of UV-induced compaction in fused silica", Proceedings of the SPIE - The International Society for Optical Engineering, vol.3051, (Optical Microlithography X, Santa Clara, CA, USA, 12-14 March 1997.) SPIE-Int. Soc. Opt. Eng, 1997. p.907-12.
210. F. Piao, W. G. Oldham, and W. G. Haller, "Thermal Annealing of Deep Ultraviolet (193 nm) Induced Compaction in Fused Silica", J. Vacuum Science and Tech. B, NOV-DEC, 1998, V16(N6):3419-3421.
211. N. Chokshi, Y. Shroff, W. G. Oldham, et al., "Maskless EUV Lithography,"
Int. Conf. Electron, Ion, and Photon Beam Technology and
Nanofabrication, Marco Island, FL, June 1999.
212. Choksi, N; Pickard, DS; McCord, M; Pease, RFW; Shroff, Y;
Chen, YJ; Oldham, W; Markle, D. " Maskless Extreme Ultraviolet
lithography." J. Vac Science & Tech. B, Nov-Dec, 1999,
V17(N6):3047-3051.
213. Fan, PA; Oldham, WG; Haller, EE. "Ultraviolet-induced Densification of Fused Silica."
J. Appl. Phys. , Apr 1, 2000, V87(N7):3287-3293.
214. Y.
Chen, Y. Shroff, W. G. Oldham, "Phase-lead Compensator to Improve the
Transient Performance of Comb Actuator,Technical
Proceedings of the Third International Conference on Modeling and Simulation of
Microsystems, P178-180, 2000.
215. Y. Chen, Y. Shroff, W. G. Oldham, "Transient and Resonant Behavior of Electrically-Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P7-12.
216. Y. Chen, Y. Shroff, W. G. Oldham, "Switching of a Double-Comb Actuator by Time-Lag Modulation and Electrical- Damping Control," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P157-160.
217. Y. Chen, Y. Shroff, W. G. Oldham, "Parasitic-Capacitance Induced Variations of the Transient Behavi or of Damped Microactuators," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P325-329.
218. Y. Chen, Y. Shroff, W.G. Oldham, "Transient Optimization of an Electrically-Damped Cantilever-Supported Microactuator and the Pull-In Analysis," International Mechanical Engineering Congress & Exposition (IMECE)-MEMS, Orlando, Nov 2000, P319-324.
219. Lee, SH; Naulleau, P; Goldberg, KA; Piao, F; Oldham, W; Bokor, J; "Phase-shifting point-diffraction interferometry at 193 nm. "APPLIED OPTICS, NOV 1, 2000, V39(N31):5768-5772.
220. Piao, F; Oldham, WG; Haller, EE. "The mechanism of radiation-induced compaction in vitreous silica. "JOURNAL OF NON-CRYSTALLINE SOLIDS, OCT, 2000, V276(N1-3):61-71.
221. Sang Hun Lee, Piao F, Naulleau P, Goldberg KA, Oldham W, Bokor J. “At-wavelength characterization of DUV-radiation-induced damage in fused silica”. [Conference Paper] SPIE-Int. Soc. Opt. Eng. Proceedings of Spie - the International Society for Optical Engineering, vol.3998, 2000, pp.724-31. USA.
222. Y. Shroff, Y. Chen, W. G. Oldham, "Fabrication of Parallel-Plate Nanomirror Arrays for EUV Maskless Lithography," The 45th International Conference on Electrons, Ions and Photon Beam Technology and Nanofabrication, Washington, May 30- June 1, 2001
223. W. G.
Oldham, Y. Shroff, Y. Chen, "Mirror Technology for EUV Maskless
Lithography," International Symposium on Microelectronic and MEMS
technology, Edinburgh, Scotland, May 30-June 1, 2001
224. Shroff Y. Chen YJ. Oldham W. “Fabrication
of parallel-plate nanomirror arrays for extreme
ultraviolet maskless lithography .”
[Article] Journal of Vacuum Science & Technology B. 19(6):2412-2415,
2001 Nov-Dec
225. W. G. Oldham and Y. Shroff ,“Mirror-based pattern generation for maskless lithography”, Microelectronic Engineering 73-74, pp 42-47, June 2004.
226. B. Nikolic, B. Wild, V. Dai, B. Warlick,
A. Zakhor, W. Oldham,
“Layout Decompression chip for maskless lithography”, SPIE-Int Soc. Opti. Eng. Proceedings
of Spie Vol 5374, pp
1092-9, 2004
227. Y.
Shroff, Y Chen, W. Oldham, “Image
Optimization for maskless lithography”,
SPIE-Int Soc. Opti.
Eng. Proceedings of Spie Vol
5374, pp 637-47, 2004
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