Proceedings of SPIE -- Volume 3873
19th Annual Symposium on Photomask Technology, Frank E. Abboud, Brian J. Grenon, Editors, December 1999, pp. 814-821
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Lawrence Berkeley National Lab. and Univ. of California/Berkeley (USA)
Wepresent recent experimental results from an actinic (operates at theEUV wavelength) defect inspection system for extreme ultraviolet lithography maskblanks. A method to cross-register and cross-correlate between the actinicinspection system and a commercial visible-light scattering defect inspection systemis demonstrated. Thus, random, real defects detected using the visible-lightscattering inspection tool can be found and studied by ouractinic inspection tool. Several defects with sub-100 nm size (asclassified by the visible scattering tool) are found with theactinic inspection tool with a good signal to noise ratio.This result demonstrates the capability of the actinic inspection toolfor independent defect counting experiments at a sub-100 nm defectsensitivity level.