Kartik Ganapathi

I am a Ph.D. candicate in the Department of Electrical Engineering and Computer Sciences at University of California Berkeley. I work with Prof. Sayeef Salahuddin.

My research interests lie broadly in the area of semiconductor device physics. Specifically, my focus is on modeling and simulation of electronic transport in nanoscale transistors and quantum mechanics of open systems that are out of equilibrium. Over the past years, I have, through the non-equilibrium Green's function (NEGF) formalism, been investigating the opportunities and challenges involved in leveraging band-to-band tunneling phenomenon and layered material systems for next-generation low-power devices.

My CV can be found here.

You can reach me at kartik[AT]eecs[DOT]berkeley[DOT]edu.

Publications

Journals

• K. Ganapathi and S. Salahuddin, Zener Tunneling: Congruence between Semi-classical and Quantum Ballistic Formalisms, under review.

• K. Ganapathi, Y. Yoon and S. Salahuddin, Intrinsic Cut-off Frequency in Scaled Graphene Transistors, arXiv: 1110.6211v1 cond-mat.mes-hall.

• Y. Yoon, K. Ganapathi and S. Salahuddin, How Good Can Monolayer MoS2 Transistors Be?, Nano Letters, vol. 10, no. 9, pp. 3768-3773, 2011.

• K. Ganapathi and S. Salahuddin, Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High ON Current, IEEE Electron Device Letters, vol. 32, no. 5, pp. 689-691, 2011.

• H. Ko, K. Takei, R. Kapadia, S. Chuang, H. Fang, P. W. Leu, K. Ganapathi, E. Plis, H. S. Kim, S.-Y. Chen, M. Madsen, A. C. Ford, Y.-L. Chueh, S. Krishna, S. Salahuddin and A. Javey, Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors, Nature, vol. 468, no. 7321, pp. 286-289, 2010.

• K. Ganapathi, Y. Yoon and S. Salahuddin, Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance, Applied Physics Letters, vol. 97, no. 3, pp. 033504-033506, 2010.

Conference Proceedings / Presentations

• K. Ganapathi, M. Lundstrom and S. Salahuddin, Can Quasi-Saturation in the Output Characteristics of Short-Channel Graphene Field-Effect Transistors be Engineered?, under review.

• K. Ganapathi, Y. Yoon and S. Salahuddin, Monolayer MoS2 transistors-ballistic performance limit analysis, Proceedings of Device Research Conference, pp. 79-80, 2011.

• K. Ganapathi and S. Salahuddin, Atomistic Quantum Transport Simulation of InAs/In0.53Ga0.47As Vertical Heterojunction Tunneling Transistors, Materials Research Society Spring Meeting, April 2011.

• K. Ganapathi and S. Salahuddin, Zener Tunneling: Correspondence between Quantum and Semi-classical Formalisms, Bulletin of the American Physical Society, March 2011.

• K. Ganapathi and S. Salahuddin, Comparative analysis of the performance of InAs lateral and vertical band-to-band tunneling transistors, Proceedings of Device Research Conference, pp. 57-58, 2010.