Chenming Hu: Publications

Books and Book Chapters

  1. R.M. White, C. Hu, "Solar Cells -- from Basics to Advanced Systems," McGraw-Hill, New York, 267 pages, 1983.
  2. L. Kasprzak, E. Takeda, C. Hu, editors, Reliability, special issue of IEEE Trans. on Electron Devices, 375 pages, December 1988.
  3. C. Hu, "Hot Carrier Effects," Chapter 3 of Advanced MOS Device Physics, N.G. Einspruch, Editor, Academic Press, 1989, pp. 119-160.
  4. C. Hu, editor, Nonvolatile Semiconductor Memories -- Trans. Technologies, Design, and Applications, IEEE Press, New York, 479 pages, 1991.
  5. C. Hu, editor, VLSI Reliability, special issue of Proc. of the IEEE, 141 pages, May 1993.
  6. C. Hu, "Devices and Technology Impact on Low Power Electronics," Chapter 2 of Low Power Design Methodologies, J.M. Rabaey and M. Pedram, Editors, Kluwer Academic Publishers, 1996.
  7. H.C. Shin, C. Hu, "Plasma Processing Damage in SiO2," Chapter 4.3 of Semiconductor Process Induced Damage, Realize, Inc., 1996 (Japanese).
  8. Y. Cheng, C. Hu, "MOSFET Modeling and BSIM User Guide," Kluwer Academic Publishers, 465 pages, 1999.
  9. W. Liu, C. Hu, "BSIM3v3 MOSFET Model," Chapter 1 of Silicon and Beyond--Advanced Device Models and Circuit Simulators, M.S. Shur, T.A. Fjeldly, Editors, World Scientific Publishing Co., pp. 1-31, 2000.
  10. Y.-C. Yeo, Q. Lu, C. Hu, "MOSFET Gate Oxide Reliability: Anode Hole Injection Model and its Applications," Chapter 5 of Selected Topics in Electronics and Systems, Vol. 23, Oxide Reliability- A Summary of Silicon Oxide Wearout, Breakdown, and Reliability, Ed. D. J. Dumin, World Scientific Publishing Co., pp. 233-270, 2002. 

Articles

  1. C. Hu, R.S. Muller, "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Electron Devices, Vol. ED-18, July 1971, pp. 418-425.
  2. M. Chang, C. Hu, J.R. Whinnery, "Light Amplification in a Thin Film," Digest of Topical Meeting on Integrated Optics , Las Vegas, NV, February 1972, Paper THA3-1.
  3. M. Chang, C. Hu, J.R. Whinnery, "Light Amplification in Thin Films," Applied Physics Letters, 1972, pp. 313-314.
  4. C. Hu, J.R. Whinnery, "A New Thermo-Optical Measurement Method and a Comparison with Other Methods," Applied Optics, Vol. 12, 1973, pp. 72-79.
  5. M. Chang, T.K. Gustafson, C. Hu, "Observation of Anti-Stoke Fluorescence in Organic Dye Solutions," IEEE Journal Quan. Elec., 1972, pp. 527-528.
  6. R. Jain, C. Hu, T.K. Gustafson, "Absorption Processes Associated with Anti-Stokes Fluorescence in Rhodamine B Solutions," Journal of Applied Physics, July, 1973, pp. 3157-3161.
  7. C. Hu, J.R. Whinnery, "Applications of Liquid Crystals in Integrated Optics," Digest of Conf. on Laser Engineering and Applications , Washington, D.C., 1973.
  8. C. Hu, J.R. Whinnery, N.M. Amer, "Optical Deflection in Thin Film Nematic Liquid Crystal Waveguides," IEEE Journal of Quantum Electronics, Vol. QE-10, 1973, pp. 218-222.
  9. C. Hu, J.R. Whinnery, "Nematic Liquid Crystal Optical Waveguides," Digest of Topical Meeting on Integrated Optics , New Orleans, January, 1973, Paper TUA6.
  10. C. Hu, J.R. Whinnery, "Field-Realigned Nematic Liquid Crystal Optical Waveguides," IEEE Journal of Quantum Electronics, Vol. QE-10, 1973, pp. 556-562.
  11. C. Hu, "Electro-Optical Modulation in Polycrystalline Films," NSF Optical Communication Systems Meeting , University of Illinois, November 1974, pp. 89-92.
  12. C. Hu, J.R. Whinnery, "Losses of a Nematic Liquid Crystal Waveguide," Journal of Optical Society of America, Vol. 64, 1973, pp. 1424-1432.
  13. C. Hu, "Electro-Optical Modulation in Grain Oriented ZnO Films," IEEE Journal of Quantum Electronics, Vol. QE-11, September, 1975, p. 64D.
  14. C. Hu, S. Kim, "Thin Film Dye Laser with Etched Cavity," Appl. Phys. Letters, Vol. 29, November, 1976, pp. 582-583.
  15. C. Hu, "Field Controlled Light Scattering in Nematic Liquid Crystals," Proc. of the IEEE , Vol. 64, December, 1976, pp. 1737-1738.
  16. C. Hu, K.J. Carney, "New Analysis of a Vertical-Junction High Voltage Solar Cell," Journal of Applied Physics, Vol. 48, January 1977, pp. 442-444.
  17. C. Hu, J. Edelberg, "Analysis of Stripe Geometry Junction Silicon Solar Cells," Solid State Electronics, Vol. 20, February, 1977, pp. 119-123.
  18. J.R. Whinnery, C. Hu, Y.S. Kwon, "Liquid Crystal Waveguides for Integrated Optics," IEEE Journal Quantum Elec., Vol. QE-13, April, 1977, pp. 262-267.
  19. C. Hu, "Some Considerations of the Optical Components of Light Fired Thyristors," Proc. of Light-Fired Thyristors Workshop , Elec. Power Research Inst., March, 1978.
  20. C. Hu, "Light Emitting Diode Charge Control Model and High Injection Effects," Proc. IEEE, Vol. 66, May, 1978, pp. 599-601.
  21. C. Hu, C. Drowley, "Open Circuit Voltage of High Intensity Silicon Cells," 13th Photovoltaic Specialist Conf. , Washington, D.C., June, 1978, pp. 786-790.
  22. C. Hu, "Determination of Nonuniform Diffusion Length and Electric Field in Semiconductors," IEEE Trans. Electron Dev., Vol. ED-25, July, 1978, pp. 822-825.
  23. C. Hu, C. Drowley, "Determination of Diffusion Length and Surface Recombination Lifetime with Optical Excitation," Solid State Elec., Vol. 21, July, 1978, pp. 965-968.
  24. C. Hu, "Optimum Doping Profile for Minimum Ohmic Resistance and High-Breakdown Voltage," IEEE Trans. Electron Dev., ED-26, March, 1979, pp. 243-244.
  25. C. Hu, "A Parametric Study of Power MOSFET's," Proc. Power Electronics Specialists Conf., San Diego, June 1979, pp. 385-395.
  26. C. Hu, Y. Shim, T. Klein, L. Elroy, "Current Field Characteristics of Oxides Grown from Poly-Si," Appl. Phys. Letters, July 15, 1979.
  27. C. Hu, W.G. Oldham, "Carrier Recombination Through Shallow Acceptors/Donors in Heavily Doped Silicon," Appl. Phys. Letters, October 1979, pp. 636-639.
  28. C. Hu, D.Y. Joh, Y. Shim, T. Klein, "Electron Trapping in Poly-Si Grown Oxides," Int'l Electron Devices Conf., Washington, D.C., December, pp. 229-232.
  29. C. Hu, "A Lucky Electron Model of Channel Hot Electron Emission," International Electron Devices Conf., Washington, D.C., December 1979, pp. 22-25.
  30. Y.S. Kim, C. Hu, C. Drowley, "A New Method of Measuring Lifetime and Surface Recombination Velocity," 14th IEEE Photovoltaic Specialist Conf., San Diego, CA, January 1980, pp. 596-600.
  31. H.C. Hsieh, C. Hu, C. Drowley, "A New Method of Analyzing Silicon Solar Cells," IEEE Trans. Electron Devices, April 1980, pp. 883-884.
  32. C. Hu, W. Ki, "Toward a Practical Computer Aid for Thyristor Circuit Design," IEEE Power Electronics Specialist Conf., Atlanta, GA, June 1980, pp. 174-179.
  33. C. Hu, M. Model, "A Model of Power Transistor Tun-off Dynamics," IEEE Power Electronics Specialist Conf., Atlanta, GA, June 1980, pp. 91-96.
  34. M-H Chi, C. Hu, "Errors in Threshold-Voltage Measurements of MOS Transistor for Dopant Profile Determinations," Solid State Electronics, Vol. 24, 1981, pp. 313-316.
  35. C. Drowley, C. Hu, "Arsenic Implanted Si Layers Annealed Using a Xe Arc Lamp," Applied Physics Letters, Vol. 38, June 1981, pp. 876-878.
  36. P. Ko, S. Tam, C. Hu, R.S. Muller, "Correlation Between Substrate and Gate Currents in MOSFETs," IEEE Trans. Electron Devices, October 1981, pp. 1260-1261.
  37. M.S. Liang, C. Hu, "Electron Trapping in Very Thin Thermal Silicon Dioxides," Tech. Digest of IEEE International Electron Devices Meeting, December 1981, pp. 396-399.
  38. P.K. Ko, R.S. Muller, C. Hu, "A Unified Model for Hot-Electron Currents in MOSFET's," Tech. Digest of IEEE International Electron Devices Meeting, December 1981, pp. 600-603.
  39. C. Hu, "Drift Collection of Alpha Generated Carriers and Design Implications," IEEE International Solid State Circuit Conf., February 1982, pp. 18-19.
  40. C. Hu, "Alpha-Particles-Induced Field and Enhanced Collection of Carriers," IEEE Electron Device Letters, EDL-3, February 1982, pp. 31-34.
  41. C.I. Drowley, C. Hu, T.I. Kamins, "A Model for Laser Melting of Polysilicon in Multilayer Structures," Abstracts of 16th Electrochemical Society Annual Meeting , Montreal, Canada, May 1982, pp. 234-235.
  42. C. Chang, M. Liang, T.Y. Chiu, C. Hu, W.G. Oldham, "Charge Transport in Oxide, Nitrided Oxide, and Nitride Films," IEEE VLSI Workshop , Hyannis, MA, May 1982.
  43. M. Chi, C. Hu, "Some Issues of Power MOSFETs," Record of IEEE Power Electronics Specialist Conf., June 1982, pp. 392-399.
  44. Y. Chen, C. Hu, "Optimum Doping Profile of Power MOSFET Epitaxial Layer," IEEE Trans. Electron Devices, ED-29, June 1982, pp. 986-987.
  45. R. Kagen, M. Chi, C. Hu, "Improving Switching Power Supply Efficiency by Using MOSFET Synchronous Rectifiers," Proc. Powercon 9 , July 1982, D-4, pp. 1-5.
  46. M. Chi, C. Hu, "Second Breakdown of Power MOSFET," IEEE Trans. Electron Devices, August 1982, pp. 1287-1293.
  47. S. Tam, P.K. Ko, F.C. Hsu, C. Hu, R.S. Muller, "Hot-Electron Induced Excess Carriers in N-Channel MOSFETs," IEEE Trans. Electron Devices, October 1982, p. 1703.
  48. F.C. Hsu, P.K. Ko, S. Tam, R.S. Muller, C. Hu, "Avalanche Breakdown of Short Channel MOSFET's," IEEE Trans. Electron Devices, October 1982, p. 1702.
  49. C.I. Drowley, C. Hu, "A Comparison of CW Laser and Electron-Beam Recrystallization of Polysilicon in Multilayer Structures," IEEE Conf. on Beam Processing , October 1982.
  50. S. Tam, P.K. Ko, C. Hu, R.S. Muller, "Correlation Between Substrate and Gate Currents in MOSFETs," IEEE Trans. Electron Devices, November 1982, pp. 1740-1744.
  51. F.C. Hsu, P.K. Ko, S. Tam, C. Hu, R.S. Muller, "An Analytical Breakdown Model for Short Channel MOSFETs," IEEE Trans. Electron Devices, November 1982, pp. 1735-1740.
  52. M.S. Liang, Y.T. Yeow, C. Chang, C. Hu, R.W. Brodersen, "MOSFET Degradation Due to Stressing of Thin Gate Oxide," Digest of 1982 International Elect. Devices Meeting , December 1982, pp. 50-53.
  53. F.C. Hsu, R.S. Muller, C. Hu, "Characteristics of Short-Channel MOSFET's in the Breakdown Regime," Digest of 1982 International Electron Devices Meeting , December 1982, pp. 282-285.
  54. S. Tam, F.C. Hsu, R.S. Muller, C. Hu, P.I. Ko, "Hot-Electron Induced Excess Carriers in MOSFET's," IEEE Electron Devices Letters, December 1982, pp. 376-378.
  55. K.W. Terrill, C. Hu, A.R. Neureuther, "Computer Analysis of the Significance of Surface Boundary Conditions on the Collection of Alpha-Induced Charge," Solid State Electronics, January 1983, pp. 15-18.
  56. D.S. Kuo, C. Hu, M.H. Chi, "dV/dt Breakdown in Power MOSFET's," IEEE Electron Devices Letters, January 1983, pp. 1-2.
  57. C. Hu, S. Tam, F.C. Hsu, R.S. Muller, P.K. Ko, "Correlating the Channel Substrate, Gate and Minority-Carrier Currents in MOSFETs," Digest of 1983 IEEE International Solid State Circuit Conf. (ISSCC) , February 1983, pp. 282-285.
  58. M.H. Chi, C. Hu, "An Intrinsic Power MOSFET Model," Proc. of Powercon 10, March 1983, H-2, pp. 1-4.
  59. C. Chang, R.W. Brodersen, C. Hu, "Direct and Fowler-Nordheim Tunneling in Thin Gate Oxide MOS Structures," Insulating Films on Semiconductors (INFOS83), J.F. Verweij, D.R. Walter (Eds.), Elsevier Science Publishers B.V. (North Holland), 1983, pp. 176-180.
  60. C. Chang, M.S. Liang, C. Hu, R.W. Brodersen, "Charge Tunneling and Impact on Thin Oxide Device Reliability," Proc. of Electrochemical Society Meeting, San Francisco, CA., May 1983, pp. 609-610.
  61. F.C. Hsu, R.S. Muller, C. Hu, "A Simplified Model of MOSFETs in the Breakdown Mode," IEEE Trans. Electron Devices, June 1983, pp. 571-576.
  62. S. Tam, F.C. Hsu, C. Hu, R.S. Muller, P. Ko, "Hot Electron Currents in Very Short Channel MOSFETs," IEEE Electron Device Letters, July 1983, pp. 249-251.
  63. M.S. Liang, C. Chang, Y.T. Yeow, C. Hu, R.W. Brodersen, "Creation and Termination of Substrate Deep Depletion in Thin Oxide MOS Capacitors by Charge Tunneling," IEEE Electron Devices Letters, EDL-4, No. 10, October 1983, pp. 350-352.
  64. S. Tam, F.C. Hsu, P.K. Ko, C. Hu, R.S. Muller, "Spatially Resolved Observation of Visible Light Emission from Si MOSFET's," IEEE Electron Device Letters, EDL-4, No. 10, October 1983, pp. 386-388.
  65. P.F. Byrne, N.W. Cheung, S. Tam, C. Hu, Y.C. Shih, J. Washburn, M. Strathman, "Megavolt Boron and Arsenic Implantation into Silicon," Applied Materials Research Conf. on Beam Processing , Boston, Mass., October 1983.
  66. F.C. Hsu, R.S. Muller, C. Hu, P.K. Ko, "A Simple Punchthrough Model for Short-Channel MOSFET's," IEEE Trans. Electron Devices, ED-30, No. 10, October 1983, pp. 1354-1359.
  67. C. Chang, R.W. Brodersen, M.S. Liang, C. Hu, "Direct Tunneling in Thin Gate-Oxide MOS Structures," IEEE Trans. on Electron Devices, ED-30, November 1983, pp. 1571-1572.
  68. Invited Paper, C. Hu, "Charge Tunneling, Trapping, Device Degradation in Thin SiO2," 1983 IEEE Surfaces and Interfaces Specialists Conf ., Fort Lauderdale, Florida, December 1-3, 1983.
  69. Invited Paper, C. Hu, "Hot-Electron Effects in MOSFET's," Tech. Digest of 1983 IEEE International Electron Devices Meeting (IEDM), Washington, D.C., December 1983, pp. 176-181.
  70. C. Chang, M.S. Liang, C. Hu, R.W. Brodersen, "Carrier-Tunneling Related Phenomena in Thin Oxide MOSFET's," Tech. Digest of IEEE International Electron Devices Meeting (IEDM), Washington, D.C., December 1983, pp. 194-197.
  71. M.S. Liang, C. Chang, W. Yang, C. Hu, R.W. Brodersen, "Hot-Carriers Induced Degradation in Thin Gate Oxide MOSFET's," Tech. Digest of IEEE International Electron Devices Meeting (IEDM), Washington, D.C., December 1983, pp. 186-189.
  72. C.S. Jeng, T. Wong, B. Joshi, C. Hu, "High Temperature and Extended Endurance Characteristics of EEROM," Tech. Digest of IEEE International Electron Devices Meeting (IEDM), Washington, D.C., December 1983, pp. 589-592.
  73. T.C. Ong, K.W. Terrill, S. Tam, C. Hu, "Photon Generation in Forward-biased Silicon PN Junctions," IEEE Electron Device Letters, EDL-4, No. 12, December 1983, pp. 460-462.
  74. B.J. Sheu, C. Hu, "Modeling the Switch-Induced Error Voltage on a Switched Capacitor," IEEE Trans. on Circuits and Systems, CAS-30, No. 12, December 1983, pp. 911-913.
  75. M.H. Chi, C. Hu, "The Operation of Power MOSFET in Reverse Mode," IEEE Trans. on Electron Devices, Vol. ED-340, December 1983, pp. 1825-1828.
  76. K. Terrill, C. Hu, A.R. Neureuther, "Computer Analysis, on the Collection of Alpha-Generated Charge for Reflecting and Absorbing Surface Conditions Around the Collector," Solid State Electronics, Vol. 27, January 1984, pp. 45-52.
  77. D. Giandomenico, D.S. Kuo, J. Choi, C. Hu, "Analysis and Prevention of Anomalous Oscillations in a Vertical Power MOSFET," Proc. of Powercon 11, April 1984, Dallas, Texas, pp. H-4, 1-9.
  78. B.J. Sheu, D.L. Scharfetter, C. Hu, D.O. Pederson, "A Compact IGFET Charge Model," IEEE Trans. Circuits and Systems, Vol. CAS-31, August 1984, pp. 745-748.
  79. S. Holland, I.C. Chen, C. Hu, T.P. Ma, "On Physical Models for Gate Oxide Breakdown," IEEE Electron Device Letters, Vol. EDL-5, August 1984, pp. 302-305.
  80. B.J. Sheu, C. Hu, "Switch-Induced Error Voltage on a Switched Capacitor," IEEE Journal of Solid State Circuits, Vol. SC-19, August 1984, pp. 519-525.
  81. S. Tam, P.K. Ko, C. Hu, "Lucky-Electron Model of Channel Hot Electron Injection in MOSFETs," IEEE Trans. Electron Devices, Vol. ED-31, September 1984, pp. 1116-1125.
  82. K. Terrill, C. Hu, "Substrate Potential Calculation for Latch-up Modeling," IEEE Trans. Electron Devices, Vol. ED-31, September 1984, pp. 1152-1155.
  83. M.S. Liang, C. Chang, Y.T. Yeow, C. Hu, R.W. Brodersen, "MOSFET Degradation Due to Stressing of Thin Oxide," IEEE Trans. Electron Devices, Vol. ED-31, September 1984, pp. 1238-1244.
  84. S. Tam, C. Hu, "Hot-Electron Induced Photo-Carrier Generation in Silicon MOSFETs," IEEE Trans. Electron Devices, Vol. ED-31, September 1984, pp. 1264-1273.
  85. Invited Paper, C. Hu, "Trends in Switching Power Semiconductor Devices," Proc. of 1984 International Electronic Devices and Materials Symp., Hsinchu, Taiwan, September 1984, pp. 105-110.
  86. B.J. Sheu, C. Hu, P.K. Ko, F-C. Hsu, "Source-and-Drain Series Resistance of LDD MOSFETs," IEEE Electron Device Letters, Vol. EDL-5, September 1984, pp. 365-367.
  87. P.F. Byrne, N.W. Cheung, S. Tam, C. Hu, Y.C. Shih, J. Washburn, M. Strathman, "Megavolt Boron and Arsenic Implantation into Silicon," Ion Implantation and Ion Beam Processing of Materials, G.K. Hubler, Ed., North-Holland Publishing Co., 1984, pp. 253-258.
  88. K.W. Terrill, P.F. Byrne, C. Hu, N.W. Cheung, "Complementary Metal-Oxide-Silicon Field-Effect Transistors Fabricated in 4 MeV Boron Implanted Silicon," Applied Physics Letters, Vol. 45, November 1, 1984, pp. 977-979.
  89. K.W. Terrill, C. Hu, P.K. Ko, "An Analytical Model for the Channel Electric Field in MOSFETs with Graded-Drain Structure," IEEE Electron Device Letters, Vol. EDL-5, November 1984, pp. 440-442.
  90. T.Y. Chan, P.K. Ko, C. Hu, "A Simple Method to Characterize Substrate Current in MOSFETs," IEEE Electron Device Letters, Vol. EDL-5, December 1984, pp. 505-507.
  91. M.S. Liang, J.Y. Choi, P.K. Ko, C. Hu, "Characterization of Very Thin Gate MOS Devices," Tech. Digest of 1984 IEEE International Electron Devices Meeting (IEDM), December 1984, pp. 152-155.
  92. P.K. Ko, S. Tam, C. Hu, S. Wong, C. Sodini, "Enhancement of Hot-Electron Currents in Graded-Gate-Oxide (GGO) MOSFETs," Tech. Digest of 1984 IEEE International Electron Devices Meeting (IEDM), December 1984, pp. 88-91.
  93. K.W. Terrill, P.F. Byrne, H.P. Zappe, N.W. Cheung, C. Hu, "A New Method for Preventing CMOS Latch-up," Tech. Digest of IEEE International Electron Devices Meeting (IEDM), December 1984, pp. 406-409.
  94. C. Hu, M-H Chi, V.M. Patel, "Optimum Design of Power MOSFETs," IEEE Trans. on Electron Devices, Vol. ED-31, December 1984, pp. 1693-1700.
  95. B.J. Sheu, C. Hu, P.K. Ko, F-C. Hsu, "Reply to Comments on Source-Drain Resistance of LDD MOSFETs,'" IEEE Electron Device Letters, Vol. EDL-5, December 1984, p. 535.
  96. C. Chang, R.W. Brodersen, C. Hu, "Quantum Yield of Electron Impact Ionization in Silicon," Journal of Applied Physics, Vol. 57, January 1985, pp. 302-309.
  97. C. Hu, S. Tam, F-C. Hsu, P.K. Ko, T.Y. Chan, K. W. Terrill, K. Terrill "Hot-Electron Induced MOSFET Degradation-Model, Monitor, Improvement," IEEE Trans. Electron Devices, Vol. ED-32, February 1985, pp. 375-385 and IEEE Journal Solid-State Circuits, Vol. SC-20, February l985, pp. 295-305.
  98. I.C. Chen, S. Holland, C. Hu, "Electrical Breakdown in Thin Gate and Tunneling Oxides," IEEE Trans. Electron Devices, Vol. ED-32, February 1985, pp. 413-422 and IEEE Journal Solid-State Circuits, Vol. SC-20, February l985, pp. 333-342.
  99. I.C. Chen, S. Holland, C. Hu, "A Quantitative Physical Model for Time-Dependent Breakdown in SiO2," Proc. of IEEE 23rd International Reliability Physics Symp. (IRPS), March 1985, pp. 24-31.
  100. D.S. Kuo, J.Y. Choi, D. Giandomenico, C. Hu, S.P. Sapp, K.A. Sassaman, R. Bregar, "Modeling the turn-off characteristics of the bipolar-MOS transistor" IEEE Electron Device Letters, Vol. EDL-16, May 1985, pp. 211-214.
  101. B.J. Sheu, C. Hu, P.K. Ko, T.Y. Chan, "On the High-Frequency and High-Speed Characteristics of MOS VLSI Circuits," 2nd International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1985, pp. 231-234.
  102. I.C. Chen, S. Holland, C. Hu, "Wearout of Thin Gate and Tunneling Oxides," 2nd International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1985, pp. 310-314.
  103. D. Giandomenico, D-S Kuo, C. Hu, "Oscillations in Multichip Power MOSFETs," Power Conversion and Intelligent Motion, Aug. l985, pp. 74-78.
  104. T.C. Ong, S. Tam, P.K. Ko, C. Hu, "Width Dependence of Substrate and Gate Currents in MOSFETs," IEEE Trans. on Electron Devices, Vol. ED-32, September 1985, pp. 1737-1740.
  105. T.Y. Chan, P.K. Ko, C. Hu, "Dependence of Channel Electric Field on Device Scaling," IEEE Electron Device Letters, Vol. EDL-6, October 1985, pp. 551-553.
  106. C. Hu, "A Model of Dielectric Breakdown," 1985 Wafer Reliability Assessment Workshop Report, October 1985, pp. 19-34.
  107. Invited Paper, C. Hu, "Thin Oxide Reliability," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., December 1985, pp. 368-371.
  108. H.P. Zappe, R.K. Gupta, K.W. Terrill, C. Hu, "Floating Well CMOS and Latchup," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., December 1985, pp. 517-520.
  109. T.Y. Chan, A.Y. Wu, P.K. Ko, C. Hu, R.R. Razouk, "Asymmetrical Characteristics in LDD and Minimum-Overlap MOSFETs," IEEE Electron Device Letters, Vol. ED-33, March 1986, pp. 18-19.
  110. M.S. Liang, J.Y. Choi, P.K. Ko, C. Hu, "Inversion-Layer Capacitance and Mobility of Very Thin Gate-Oxide MOSFETs," IEEE Trans. on Electron Devices, Vol. ED-33, March 1986, pp. 409-413.
  111. J. Lee, K. Mayaram, C. Hu, "A Theoretical Study of Gate/Drain Offset in LDD MOSFETs," IEEE Electron Device Letters, Vol. EDL-7, March 1986, pp. 152-154.
  112. I.C. Chen, S. Holland, C. Hu, "Hole Trapping and Breakdown in Thin SiO2," IEEE Electron Device Letters, Vol. EDL-7, March 1986, pp. 164-167.
  113. J. Lee, I.C. Chen, S. Holland, Y. Fong, C. Hu, "Oxide Defect Density, Failure Rate and Screen Yield," Digest of Tech. Papers, IEEE Symp. on VLSI Technology, San Diego, CA., May 1986, pp. 69-70.
  114. K. Mayaram, J. Lee, T.Y. Chan, C. Hu, "An Analytical Perspective of LDD MOSFETs," Digest of Tech. Papers, IEEE Symp. on VLSI Technology, San Diego, CA., May 1986, pp. 61-62.
  115. K.K. Young, T.Y. Chan, C. Hu, W.G. Oldham, "Hole Trapping and Hot-Carrier Induced Device Instability in Thin Nitride/Oxide IGFETs," Digest of Tech. Papers, IEEE Symp. on VLSI Technology, San Diego, CA., May 1986, pp. 65-66.
  116. S. Holland, C. Hu, "Correlation Between Breakdown Susceptibility in Thin Thermal Si02 with Process-Dependent Positive Charge Trapping," Proc. of the 5th International Symp. on Silicon Materials Science and Technology, (H.R. Huff, T. Abe, B. Kolbsen, eds.), The Electrochemical Society, May 1986, pp. 470-483.
  117. W.S. Feng, T.Y. Chan, C. Hu, "MOSFET Drain Breakdown Voltage," IEEE Electron Device Letters, Vol. EDL-7, July 1986, pp. 449-450.
  118. S. J. Hrinya, C. Hu, "Residential Time-of-Use Kilowatt-hour Meter," Electric Power Systems Research, Vol. 11, No. 1, August 1986, pp. 13-23.
  119. S. Holland, C. Hu, "Correlation Between Breakdown and Process-Induced Positive Charge Trapping in Thin Thermal Si02," Journal of the Electrochemical Society, Vol. 133, No. 8, August 1986, pp. 1705-1712.
  120. J. Lee, I.C. Chen, C. Hu, "Comparison Between CVD and Thermal Gate Oxide Dielectric Integrity," IEEE Electron Device Letters, Vol. EDL-7, Sept. 1986, pp. 506-509.
  121. D.S. Kuo, C. Hu, "Optimization of Epitaxial Layers for Power Bipolar-MOS Transistor," IEEE Electron Device Letters, Vol. EDL-7, Sept. 1986, pp. 510-512.
  122. A.T. Wu, T.Y. Chan, P.K. Ko, C. Hu, "A Source-Side Injection Erasable Programmable Read Only Memory (SI-EPROM) Device," IEEE Electron Device Letters, Vol. EDL-7, Sept. 1986, pp. 540-542.
  123. I.C. Chen, S. Holland, K.K. Young, C. Chang, C. Hu, "Substrate Hole Current and Oxide Breakdown," Applied Physics Letters, Vol. 49, Sept. 15, 1986, pp. 669-671.
  124. D-S Kuo, C. Hu, "Speed-Conductance Optimization for Power Bipolar-MOS Transistor," Conf. Record, IEEE Industry Applications Society Meeting, Denver, Colorado, September 28-Oct 3,1986, pp. 396-403.
  125. Invited Paper, S. Holland, I.C. Chen, J. Lee, Y. Fong, K.K. Young, C. Hu, "Time-Dependent Breakdown of Thin Oxides," Proc. of Electrochemical Society Symp. on Silicon Nitride and Silicon Dioxide Thin Insulating Films, San Diego, CA., October 1986, pp. 361-382.
  126. R.K. Gupta, I. Sakai, C. Hu, "Analysis of Latch-Up Holding Voltage for Shallow Trench CMOS," IEEE Electronics Letters, Vol. 22, No. 23, Nov. 1986, pp. 1261-1263.
  127. I.C. Chen, S. Holland, C. Hu, "Oxide Breakdown Dependence on Thickness and Hole Current -- Enhanced Reliability of Ultra Thin Oxides," Tech. Digest of International Electron Devices Meeting (IEDM), Los Angeles, CA., Dec. 1986, pp. 660-663.
  128. Y. Fong, I.C. Chen, J. Lee, S. Holland, C. Hu, "Dynamic Stressing of Thin Oxides," Tech. Digest of International Electron Devices Meeting (IEDM), Los Angeles, CA., Dec. 1986, pp. 664-667.
  129. A.T. Wu, T.Y. Chan, P.K. Ko, C. Hu, "A Novel High-Speed, 5-Volt Programming EPROM Structure with Source Side Injection," Tech. Digest, IEEE International Electron Device Meeting (IEDM), Los Angeles, CA., Dec. 1986, pp. 586-589.
  130. H.J. Park, P.K. Ko, C. Hu, "A Measurement-Based Charge Sheet Capacitance Model of Short-Channel MOSFET's for SPICE," Tech. Digest, IEEE International Electron Device Meeting (IEDM), Los Angeles, CA., Dec. 1986, pp. 40-43.
  131. M.P. Brassington, R.R. Razouk, C. Hu, "Effects of PECVD Nitride Passivation and Post-Passivation Anneals on Device Degradation," IEEE Surface and Interfaces Specialist Conf., Los Angeles, CA., Dec. 1986.
  132. Invited Paper, P.K. Ko, T.Y. Chan, A.T. Wu, C. Hu, "The Effects of Weak Gate-to-Drain (Source) Overlap on MOSFET Characteristics," Tech. Digest of International Electron Device Meeting (IEDM), Los Angeles, CA, Dec. 1986, pp. 292-295.
  133. D.S. Kuo, C. Hu, S.P. Sapp, "An Analytical Model for the Power Bipolar-MOS Transistor," Solid State Electronics, Vol. 29, No. 12, Dec. 1986, pp. 1229-1238.
  134. G. Chen, S. Sapp, N. Wylie, C. Hu, "A Novel Contact Process for Power MOSFETs," IEEE Electron Device Letters, EDL-7, No. 12, December 1986, pp. 672-673.
  135. H.P. Zappe, C. Hu, "Device Characteristics of MOSFET's in MeV Implanted Substrates," Nuclear Instruments and Methods in Physics Research B21 (1987), North Holland Publishing, Amsterdam, 1987, pp. 163-167.
  136. H.P. Zappe, R.K. Gupta, I. Sakai, C. Hu, "Operation of CMOS Devices with a Floating Well," IEEE Trans. Electron Devices, Vol. ED-34, February 1987, pp. 335-343.
  137. G. Samachisa, C-S Su, Y-S Kao, G. Smarandiou, T. Wong, C. Hu, "A 128K Flash EEPROM Using Double Polysilicon Technology," IEEE International Solid-State Circuits Conf. (ISSCC) Digest of Tech. Papers, Feb. 1987, pp. 76-77.
  138. T.Y. Chan, K.K. Young, C. Hu, "A True Single Transistor Oxide-Nitride-Oxide EEPROM," IEEE Electron Device Letters, EDL-8, No. 3, March 1987, pp. 93-95.
  139. J.Y. Choi, P.K. Ko, C. Hu, "Effect of Oxide Field on Hot-Carrier-Induced Metal-Oxide-Semiconductor Field-Effect Transistor Degradation," Applied Physics Letters, Vol. 50, No. 17, Apr. 27, 1987, pp. 1188-1190.
  140. I.C. Chen, C. Hu, "Accelerated Testing of Time-Dependent Breakdown of SiO2," IEEE Electron Device Letters, EDL-8, No. 4, Apr. 1987, pp. 140-142.
  141. K.K. Young, C. Hu, W.G. Oldham, "Charge Transport and Trapping Model for Scaled Nitride-Oxide Stacked Films," Applied Surface Science, (North Holland Publishing, Amsterdam), Vol. 30, 1987, pp. 171-179.
  142. H. Tsai, L. Wu, C. Wu, C. Hu, "The Effects of Thermal Nitridation Conditions on the Reliability of Thin Nitrided Oxide Films," IEEE Electron Device Letters, EDL-8, No. 4, Apr. 1987, pp. 143-145.
  143. Invited Paper, C. Hu, "Hot Electron Effects in VLSI MOSFETs," Tech. Digest of 3rd International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1987, pp. 79-84.
  144. I.C. Chen, S. Holland, C. Hu, "Electron Trap Generation and Defect in SiO2," Proc. International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1987, pp. 85-86.
  145. T.Y. Chan, K.K. Young, C. Hu, "An Oxide-Nitride EEPROM Device with One Transistor Per Bit," Proc. International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1987, pp. 251-254.
  146. A.T. Wu, T.Y. Chan, P.K. Ko, C. Hu, "Uniformity and Process Control of Gate Current Characteristics in Two Source-Side Injection EPROM Technologies," Proc. International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1987, pp. 246-250.
  147. T.Y. Chan, A.T. Wu, P.K. Ko, C. Hu, "Effects of the Gate-to-Drain/Source Overlap in MOSFET Characteristics and Its Impact on Submicron Technology," Tech. Digest, 3rd International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1987, pp. 101-105.
  148. I.C. Chen, S. Holland, C. Hu, "Electron Trap Generation by Recombination of Electrons and Holes in SiO2," Journal of Applied Physics, Vol. 61, No. 9, May 1987, pp. 4544-4548.
  149. I.C. Chen, J. Lee, C. Hu, "Accelerated Testing of Silicon Dioxide Wearout," Tech. Digest, Symp. on VLSI Technology, Karuizawa, Japan, May 1987, pp. 23-24.
  150. J.Y. Choi, P.K. Ko, C. Hu, "Hot-Carrier Induced MOSFET Degradation: AC versus DC Stressing," Tech. Digest Symp. on VLSI Technology, Karuizawa, Japan, May 1987, pp. 45-46.
  151. P. George, K. Hui, P. Ko, C. Hu, "A GaAs MESFET Model for Circuit Simulation, Proc. IEEE Custom Integrated Circuits Conf., May 1987, pp. 409-412.
  152. T.Y. Chan, A.T. Wu, P.K. Ko, C. Hu, "A Capacitance Method to Determine the Gate-to-Drain/Source Overlap Length of MOSFETs," IEEE Electron Device Letters, Vol. EDL-8, No. 6, June 1987, pp. 269-271.
  153. K. Mayaram, J. Lee, C. Hu, "A Model for the Electric Field in Lightly Doped Drain Structures," IEEE Trans. on Electron Devices, Vol. ED-34, No. 7, July 1987, pp. 1509-1518.
  154. T.Y. Chan, A.T. Wu, P.K. Ko, C. Hu, "Effects of the Gate-to-Drain/Source Overlap on MOSFET Characteristics," IEEE Electron Device Letters, Vol. EDL-7, No. 7, July 1987, pp. 326-328.
  155. J.Y. Choi, P.K. Ko, C. Hu, "Hot-Carrier-Induced MOSFET Degradation Under AC Stress," IEEE Electron Device Letters, Vol. EDL-7, No. 8, August 1987, pp. 333-335.
  156. D. Burnett, C. Hu, A. Kapoor, D. Nguyen, C. Yang, "Modeling of the AC Impedance of the Polysilicon-Silicon Interface," Proc. IEEE Bipolar Circuits and Technology Meeting, Sept. 1987, pp. 154-156.
  157. T.C. Ong, P.K. Ko, C. Hu, "Modeling of Substrate Current in P-MOSFETs," IEEE Electron Device Letters, Vol. EDL-8, No. 9, Sept. 1987, pp. 413-416.
  158. Invited Paper, C. Hu, "An Engineering Characterization of Defect-Related Breakdown of SiO2," Proc. of the First Workshop on Process-Related Electrically Active Defects in Semiconductor-Insulator Systems, Research Triangle Park, N.C., Sept. 1987, pp. 1-3.
  159. G. Samachisa, C.S. Su, Y.S. Kao, G. Smarandiou, C.Y.M. Wang, T. Wong, C. Hu, "A 128K Flash EEPROM Using Double-Polysilicon Technology," IEEE Solid-State Circuits, Vol. SC-22, No. 5, Oct. 1987, pp. 676-683.
  160. Best Paper Award, Y. Fong, C. Hu, "The Effects of High Electric Field Transients on Thin Gate Oxide MOSFETs," Proc. Electrical Overstress/Electrostatic Discharge Symp., Orlando, Florida, Oct. 1987, pp. 252-257.
  161. T.C. Ong, P.K. Ko, C. Hu, "50 Å Gate-Oxide MOSFET's at 77K," IEEE Trans. on Electron Devices, Vol. ED-34, No. 10, Oct. 1987, pp. 2129-2135.
  162. J. Chen, T.Y. Chan, I.C. Chen, P.K. Ko, C. Hu, "Sub-Breakdown Drain Leakage Current in MOSFETs," IEEE Electron Device Letters, Vol. EDL-8, No. 11, Nov. 1987, pp. 515-517.
  163. R.K. Gupta, I. Sakai, C. Hu, "Effects of Substrate Resistances on CMOS Latch-Up Holding Voltage," IEEE Trans. on Electron Devices, Vol. ED-34, No. 11, Nov. 1987, pp. 2309-2316.
  164. M.M. Kuo, K. Seki, P.M. Lee, J.Y. Choi, P.K. Ko, C. Hu, "Quasi-Static Simulation of Hot-Electron-Induced MOSFET Degradation Under AC (Pulse) Stress," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., Dec. 1987, pp. 47-50.
  165. T.Y. Chan, J. Chen, P.K. Ko, C. Hu, "The Impact of Gate-Induced Drain Leakage Current on MOSFET Scaling," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., Dec. 1987, pp. 718-721.
  166. M.C. Jeng, J. Chung, A.T. Wu, T.Y. Chan, J. Moon, G. May, P.K. Ko, C. Hu, "Performance and Hot-Electron Reliability of Deep-Submicron MOSFET's," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., Dec. 1987, pp. 710-713.
  167. H.J. Park, P.K. Ko, C. Hu, "A Non-Quasistatic MOSFET Model for SPICE," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., Dec. 1987, pp. 652-655.
  168. Y. Fong, A.T. Wu, R. Moazzami, P.K. Ko, C. Hu, "Oxide Grown on Textured Single-Crystal Silicon for Low Programming Voltage Non-Volatile Memory Applications," Tech. Digest of International Electron Device Meeting (IEDM), Washington, D.C., Dec. 1987, pp. 889-891.
  169. S. Holland, I.C. Chen, C. Hu, "Ultra-Thin Silicon-Dioxide Breakdown Characteristics of MOS Devices with n+ and p+ Polysilicon Gates," IEEE Electron Device Letters, Vol. EDL-8, No. 12, Dec. 1987, pp. 572-575.
  170. M.P. Brassington, R.R. Razouk, C. Hu, "Localized Interface Trap Generation in SILO-Isolated MOSFET's During PECVD Nitride Passivation," IEEE Trans. on Electron Devices, Vol. ED-35, No. 1, Jan. 1988, pp. 96-100.
  171. I.C. Chen, J.Y. Choi, T.Y. Chan, T.C. Ong, C. Hu, "The Effect of Channel Hot-Carrier Stressing on Gate Oxide Integrity in MOSFET," Proc. IEEE International Reliability Physics Symp., Monterey, CA., Apr. 1988, pp. 1-7.
  172. Best Paper Award, J. Lee, I.C. Chen, C. Hu, "Statistical Modeling of Silicon Dioxide Reliability," Proc. of IEEE International Reliability Physics Symp., Monterey, CA., Apr. 1988, pp. 131-138.
  173. J. Chung, M.C. Jeng, J.E. Moon, A.T. Wu, T.Y. Chan, P.K. Ko, C. Hu, "Deep Submicron MOS Device Fabrication Using a Photoresist-Ashing Technique," IEEE Electron Device Letters, Vol. EDL-9, No. 4, Apr. 1988, pp. 186-188.
  174. Y. Fong, A.T. Wu, P.K. Ko, C. Hu, "Oxides Grown on Textured Single-Crystal Silicon for Enhanced Conduction," Applied Physics Letters, Vol. 52, No. 14, April 1988, pp. 1139-1141.
  175. T.C. Ong, K. Seki, P.K. Ko, C. Hu, "Hot-Carrier Induced Degradation in P-MOSFET's Under AC Stress," IEEE Electron Device Letters, Vol. 9, No. 5, May 1988, pp. 211-213.
  176. B-K. Liew, N.W. Cheung, C. Hu, "Effects of High Current Pulses on Integrated Circuit Metallization Reliability," IEEE Intersociety Conf. on Thermal Phenomena in the Fabrication and Operation of Electronic Components, Los Angeles, May 1988, pp. 3-6.
  177. J. Lee, C. Hu, "LPCVD Thin Oxide Process," Digest of VLSI Technology Symp., San Diego, May 1988, pp. 49-50.
  178. B-K. Liew, N.W. Cheung, C. Hu, "Electromigration Interconnect Failure Under Pulse Test Conditions," Digest of Symp. on VLSI Technology, San Diego, May 1988, pp. 59-60.
  179. J. Lee, C. Hu, "Polarity Asymmetry of Oxides Grown on Polycrystalline Silicon," IEEE Trans. on Electron Devices, Vol. ED-35, No. 7, July, 1988, pp. 1063-1070.
  180. M.M. Kuo, M. Seki, P. Lee, J.Y. Choi, P.K. Ko, C. Hu, "Simulation of MOSFET Lifetime Under AC Hot Electron Stress," IEEE Trans. on Electron Devices, Vol. ED-35, No. 7, July 1988, pp. 1004-1011.
  181. H.P. Zappe, C. Hu, "Characteristics of CMOS Devices in High Energy Boron Implanted Substrates," IEEE Trans. on Electron Devices, Vol. 35, No. 7, July 1988, pp. 1029-1034.
  182. T.C. Ong, M. Levi, P.K. Ko, C. Hu, "Recovery of Threshold Voltage After Hot Carrier Stressing," IEEE Trans. on Electron Devices, Vol. 35, No. 7, July 1988, pp. 978-984.
  183. J. Lee, C. Hegarty, C. Hu, "Electrical Characteristics of MOSFETs Using Low-Pressure Chemical Vapor Deposited Oxide," IEEE Electron Device Letters, Vol. EDL-9, No. 7, July 1988, pp. 324-327.
  184. D. Burnett, C. Hu, "Hot Carrier Effects in Polysilicon Emitter Bipolar Transistors," Proc. IEEE Bipolar Circuits and Technology Meeting, October 1988, pp. 95-98.
  185. M.C. Jeng, P.K. Ko, C. Hu, "Modeling Deep-Submicrometer MOSFETs for Analog/Digital Circuit Simulations," Abstracts of Semiconductor Research Council (SRC) TECHCON, October 1988, Dallas, Texas, pp. 178-181.
  186. Best Presentation Award, C. Hu, P.K. Ko, P. Lee, J. Lee, N. Cheung, B.K. Liew, "IC Reliability Prediction," Abstracts of Semiconductor Research Council (SRC) TECHCON, October 1988, Dallas, Texas, pp. 240-243.
  187. B. Tien, C. Hu, "Determination of Carrier Lifetime from Rectifier Ramp Recovery Waveform," IEEE Electron Device Letters, EDL-9, No. 10, October 1988, pp. 553-555.
  188. Keynote Address, C. Hu, "Oxide Time Dependent Breakdown Testing Model," Wafer Level Reliability Workshop Report, Lake Tahoe, October 1988, pp. 1-26.
  189. K.K. Young, C. Hu, W.G. Oldham, "Transport and Trapping Characteristics in Thin Nitride-Oxide Stacked Films," IEEE Electron Device Letters, EDL-9, No. 11, November 1988, pp. 616-618.
  190. C. Hu, "Reliability by Design," Digest of Government Microcircuit Applications Conf., Las Vegas, Nevada, November 1988, pp. 381-384.
  191. I.C. Chen, J.Y. Choi, T.Y. Chan, C. Hu, "The Effect of Channel Hot Carrier Stressing on Gate Oxide Integrity in MOSFET," IEEE Trans. on Electron Devices, Vol. 35, No. 12, December 1988, pp. 2253-2258.
  192. J. Lee, I.C. Chen, C. Hu, "Modeling and Characterization of Oxide Reliability," IEEE Trans. on Electron Devices, Vol. 35, No. 12, December 1988, pp. 2268-2278.
  193. D. Burnett, C. Hu, "Modeling Hot-Carrier Induced Base Leakage in Polysilicon Emitter Bipolar Transistors," IEEE Trans. on Electron Devices, Vol. 35, No. 12, December 1988, pp. 2238-2247.
  194. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, "Flicker Noise Characteristics of Advanced MOS Technologies," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 34-37.
  195. H. Park, P. Ko, C. Hu, "A Charge Conserving Non-Quasistatic MOSFET Model for SPICE Transient Analysis," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 110-113.
  196. M.C. Jeng, P.K. Ko, C. Hu, "A Deep Submicron MOSFET Model for Analog/Digital Circuit Simulations," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 114-117.
  197. P.M. Lee, M.M. Kuo, K. Seki, P.K. Ko, C. Hu, "Circuit Aging Simulator (CAS)," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 134-137.
  198. J. Chung, M.C. Jeng, G. May, P.K. Ko, C. Hu, "Hot Electron Currents in Deep Submicron MOSFETs," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 200-203.
  199. M. Jeng, J. Chung, G. May, P. Ko, C. Hu, "Design Guidelines for Deep-Submicron MOSFETs," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 386-389.
  200. K. Mayaram, B. Tien, C. Hu, D. Pederson, "Simulation and Modeling for Soft Recovery of p-i-n Rectifiers," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 622-625.
  201. R. Moazzami, J. Lee, I. Chen, C. Hu, "Projecting the Minimum Acceptable Oxide Thickness for Time Dependent Dielectric Breakdown," Tech. Digest of International Electron Devices Meeting (IEDM), San Francisco, CA., December 1988, pp. 710-713.
  202. Invited Paper, C. Hu, "Engineering Model of Defect Induced Oxide Breakdown," Abstracts of 19th IEEE Semiconductor Interface Specialists Conf., San Diego, December 1988, pp. 85-86.
  203. J. Chung, M-C. Jeng, G. May, P.K. Ko, C. Hu, "Intrinsic Transconductance Extraction for Deep-Submicron MOSFETs," IEEE Trans. Electron Devices, Vol. 36, No. 1, January 1989, pp. 140-142.
  204. J.Y. Choi, P.K. Ko, C. Hu, W. Scott, "Hot-Carrier Induced MOSFET Degradation -- Oxide Charge versus Interface Traps," Journal of Applied Physics, Vol. 65, No. 1, 1 January 1989, pp. 354-360.
  205. T.C. Ong, P.K. Ko, C. Hu, "Hot-Carrier Effects in Depletion-Mode MOSFETs," Solid State Electronics, Vol. 32, No. 1, January 1989, pp. 33-36.
  206. P. George, P.K. Ko, C. Hu, "Modeling the Substrate Depletion Region for GaAs FETs Fabricated on Semi-Insulating Substrates," Solid State Electronics. Vol. 32, No. 2, February 1989, pp. 165-168.
  207. P. George, P.K. Ko, C. Hu, "A GaAs MESFET Model for Circuit Simulation," International Journal of Electronics, Vol. 66, No. 3, March 1989, pp. 379-397.
  208. H.J. Park, P.K. Ko, C. Hu, "A Non-Quasistatic MOSFET Model for SPICE -- Transient Analysis," IEEE Trans. on Electron Devices, Vol. 36. No. 5, March 1989, pp. 561-576.
  209. T.C. Ong, K. Seki, P.K. Ko, C. Hu, "P-MOSFET Gate Current and Device Degradation," Proc. International Reliability Physics Symp., Phoenix, AZ, April 1989, pp. 178-182.
  210. Y. Fong, C. Hu, "Internal ESD Transients in Input Protection Circuits," Proc. International Reliability Physics Symp., Phoenix, AZ, April 1989, pp. 77-81.
  211. Best Paper Award, J. Chung, M.C. Jeng, J.E. Moon, P.K. Ko, C. Hu, "Low-Voltage Hot Electron Degradation in Deep Submicrometer MOSFETs," Proc. International Reliability Physics Symp., Phoenix, AZ, April 1989, pp. 92-97.
  212. B.K. Liew, N.W. Cheung, C. Hu, "Electromigration Interconnect Lifetime Under AC and Pulse DC Stress," Proc. International Reliability Physics Symp., Phoenix, AZ, April 1989, pp. 215-219.
  213. S. Aronowitz, H.P. Zappe, C. Hu, "Interfacial Charge Modification Between SiO2 and Silicon," Appl. Phys. Letters, Vol. 54, No. 14, April 3, 1989, pp. 1317-1319.
  214. P. George, P.K. Ko, C. Hu, "Simulating the Effects of Single-Event and Radiation Phenomena on GaAs MESFET Integrated Circuits," Proc. IEEE Custom Integrated Circuits Conf., San Diego, CA., May 1989, pp. 9.7.1-9.7.4.
  215. J. Chen, T-Y. Chan, P.K. Ko, C. Hu, "Gate Current in Off-State MOSFET," IEEE Electron Device Letters, Vol. 10, No. 5, May 1989, pp. 203-205.
  216. R. Moazzami, C. Hu, "An Oxide Burn-In Model," Digest of VLSI Technology Symp., Kyoto, Japan, May 1989, pp. 77-78.
  217. T.C. Ong, P.K. Ko, C. Hu, "P-MOSFET Gate Current and Device Degradation," Proc. of International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 1989, pp. 193-196.
  218. K.K Hung, P.K. Ko, C. Hu, Y.C. Cheng, "An Automated System for Measurement of Random Telegraph Noise in MOSFETs," IEEE Transactions on Electron Devices, Vol. 36, No. 6, June 1989, pp. 1217-1219.
  219. S. Aronowitz, H.P. Zappe, C. Hu, "Effective Charge Modification Between SiO2 and Silicon," Journal of the Electrochemical Society, Vol. 136, No. 8, August 1989, pp. 2368-2370.
  220. T.C. Ong, P.K. Ko, C. Hu, "EEPROM as an Analog Memory Device," IEEE Trans. on Electron Devices, Vol. 36, No. 9, September l989, pp. 1840-1841.
  221. Keynote Address, C. Hu, "Submicron IC Reliability Research at Berkeley," Proc. Electrical Overstress/Electrostatic Discharge Symp.,  New Orleans, Louisiana, September 1989, pp. 1-6.  Symposium Keynote
  222. Invited Paper, C. Hu, "Reliability Issues of MOS and Bipolar IC's," Proc. IEEE International Conf. on Computer Design (ICCD), Cambridge, MA, October 1989, pp. 438-442.
  223. Invited Paper, C. Hu, "Submicron Device Reliability Research," Tech. Digest, International Conf. on VLSI and CAD (ICVC), Seoul, Korea, October 1989, pp. 425-429.
  224. R. Moazzami, J. Lee, C. Hu, "Temperature Acceleration of Time-Dependent Dielectric Breakdown," IEEE Trans. on Electron Devices. , Vol. 36, No. 11, November 1989, pp. 2462-2465.
  225. B.K. Liew, N.W. Cheung, C. Hu, "Effects of Self-Heating on Integrated Circuit Metallization Lifetimes," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., December 1989, pp. 323-326.
  226. E. Rosenbaum, P.M. Lee, R. Moazzami, P.K. Ko, C. Hu, "Circuit Reliability Simulator -- Oxide Reliability Module," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., December 1989, pp. 331-334.
  227. J. Chung, J. Chen, M. Levi, P.K. Ko, C. Hu, "The Effects of Off-Axis Substrate Orientation on MOSFET Characteristics," Tech. Digest of International Electron Devices Meeting (IEDM), Washington, D.C., December 1989, pp. 633-636.
  228. C. Lau, C. Hu, E.J. McCluskey, "Research in Advanced Electronic System Reliability," Naval Review, Vol. XLI, Three/1989, pp. 9-19.
  229. L.J. Palkuti, R.D. Ormond, C. Hu., J. Chung, "Correlation Between Channel Hot-Electron Degradation and Radiation-Induced Interface Trapping in MOS Devices," IEEE Trans. on Nuclear Sciences, Vol. 36, No. 6, December 1989, pp. 2140-2146.
  230. P.M. Lee, P.K. Ko, C. Hu, "Relating CMOS Inverter Lifetime to DC Hot-Carrier Lifetime of NMOSFETs," IEEE Electron Device Letters, Vol. 11, No. 1, January 1990, pp. 39-41.
  231. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, "Random Telegraph Noise of Deep-Submicron MOSFETs," IEEE Electron Device Letters, Vol. 11, No. 2, February 1990, pp. 90-92.
  232. Y. Fong, A.T. Wu, C. Hu, "Oxides Grown on Textured Single-Crystal Silicon -- Dependence on Process and Application of EEPROMs," IEEE Trans. on Electron Devices, Vol. 37, No. 3, March 1990, pp. 583-590.
  233. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, "A Unified Model for the Flicker Noise in Metal-Oxide-Semiconductor Field-Effect Transistors," IEEE Trans. on Electron Devices, Vol. 37, No. 3, March 1990, pp. 654-665.
  234. B.K. Liew, P. Fang, N.W. Cheung, C. Hu, "Reliability Simulator for Interconnect and Intermetallic Contact Electromigration," Proc. International Reliability Physics Symp., New Orleans, LA, March 1990, pp. 111-118.
  235. D. Burnett, C. Hu, "Hot-Carrier Reliability of Bipolar Transistors," Proc. 1990 International Reliability Physics Symp., New Orleans, LA, March 1990, pp. 164-169.
  236. S. Chiang, R. Wang, J. Chen, K. Hayes, J. McCollum, E. Hamdy, C. Hu, "Oxide Nitride-Oxide Antifuse Reliability," Proc. International Reliability Physics Symp., New Orleans, LA, March 1990, pp. 186-192.
  237. R. Moazzami, C. Hu, W.H. Shepherd, "Electrical Conduction and Breakdown in Sol-Gel Derived PZT Thin Films," Proc. International Reliability Physics Symp., New Orleans, LA., March 1990, pp. 231-236.
  238. K. Hui, C. Hu, P. George, P.K. Ko, "Impact Ionization in GaAs MOSFETs," IEEE Electron Device Letters, Vol. 11, No. 3, March 1990, pp. 113-115.
  239. J.D. Burnett, C. Hu, "Hot-Carrier Degradation in Bipolar Transistors at 300 and 110 K-effect on BiCMOS Inverter Performance," IEEE Trans. on Electron Devices, Vol. 37, No. 4, April 1990, pp. 1171-1173.
  240. K.K. Hung, P.K. Ko, C. Hu, Y.C. Cheng, "A Physics-Based MOSFET Noise Model for Circuit Simulators," IEEE Trans. Electron Devices, Vol. 37, No. 4, May 1990, pp. 1323-1333.
  241. B.K. Liew, N. Cheung, C. Hu, "Projecting Interconnect Electromigration Lifetime for Arbitrary Current Waveforms," IEEE Trans. on Electron Devices, Vol. 37, No. 5, May 1990, pp. 1343-1351.
  242. J.E. Moon, T. Garfinkel, J. Chung, M. Wong, P.K. Ko, C. Hu, "A New LDD Structure: Total Overlap with Polysilicon Spacer (TOPS)," IEEE Electron Device Letters, Vol. 11, No. 5, May 1990, pp. 221-223.
  243. R. Moazzami, C. Hu, W.H. Shepherd, "A Ferroelectric DRAM Cell for High Density NVRAMs," Digest of Tech. Papers of Symp. on VLSI Technology, Honolulu, Hawaii, June 1990, pp. 15-16.
  244. P. Fang, K.K. Hung, P.K. Ko, C. Hu, "Characterizing a Single Hot-Electron-Induced Trap in Submicron MOSFET Using Random Telegraph Noise," Digest of Tech. Papers of Symp. on VLSI Technology, Honolulu, Hawaii, June 1990, pp. 37-38.
  245. R. Moazzami, C. Hu, "Projecting Gate Oxide Reliability and Optimizing Burn-in," IEEE Trans. on Electron Devices, Vol. 37, No. 7, July 1990, pp. 1643-1650.
  246. J. Chung, M-C. Jeng, J. Moon, P.K. Ko, C. Hu, "Low Voltage Hot Electron Degradation in Deep Submicron MOSFETs," IEEE Trans. on Electron Devices, Vol. 37, No. 7, July 1990, pp. 1651-1657.
  247. T.C. Ong, P.K. Ko, C. Hu, "Hot-Carrier Current Modeling and Device Degradation in Surface Channel P-MOSFET," IEEE Trans. on Electron Devices, Vol. 37, No. 7, July 1990, pp. 1658-1666.
  248. Y. Fong, C. Hu, "High-Current Snapback Characteristics of MOSFETs," IEEE Trans. on Electron Devices, Vol. 37, No. 9, September 1990, pp. 2101-2103.
  249. P. George, K. Hui, P.K. Ko, C. Hu, "The Reduction of Backgating in GaAs MESFET's by Impact Ionization," IEEE Electron Device Letters, October 1990, pp. 434-436.
  250. R. Moazzami, W.H. Shepherd, C. Hu, "A Ferroelectric DRAM Cell for High Density NVRAM's," IEEE Electron Device Letters, October 1990, pp. 454-456.
  251. J. Chen, P. Fang, P.K. Ko, C. Hu, "Noise Overshoot at Drain Current Kink in SOI MOSFET," Proc. IEEE SOS/SOI Technology Conf., Key West, Florida, October 1990, pp. 40-41.
  252. P. George, P.K. Ko, C. Hu, "Model for Photo-Induced Long Term Drain Current Transients in GaAs MOSFETs," International Journal of Electronics, Vol. 68, No. 5, October 1990, pp. 721-728.
  253. H.P. Zappe, S. Aronowitz, C. Hu, "Oxide Implantation for Threshold Voltage Control," Solid-State Electronics, Vol. 33, No. 11, November 1990, pp. 1447-1453.
  254. M.C. Jeng, J.E. Chung, P.K. Ko, C. Hu, "The Effects of Source/Drain Resistance on Deep Submicron Device Performance," IEEE Trans. on Electron Devices, Vol. 37, No. 11, November 1990, pp. 2408-2410.
  255. J.E. Chung, M.C. Jeng, J.E. Moon, P.K. Ko, C. Hu, "Low-Voltage Hot-Electron Currents and Degradation in Deep-Submicrometer MOSFETs," Vol. 37, No. 7, pp. 1651-1657, November 1990.
  256. D. Burnett, T. Horiuchi, C. Hu, "Bipolar Circuit Reliability Simulation," Tech. Digest of IEEE International Electron Devices Meeting, San Francisco, CA., December 1990, pp. 181-184.
  257. R. Moazzami, C. Hu, W.H. Shepherd, "Endurance Properties of Ferroelectric PZT Thin Films," Tech. Digest of IEEE International Electron Devices Meeting, December 1990, pp. 417-420.
  258. J.E. Chung, K.N. Quader, C.G. Sodini, P.K. Ko, C. Hu, "The Effects of Hot-Electron Degradation on Analog MOSFET Performance," Tech. Digest of IEEE International Electron Devices Meeting, December 1990, pp. 553-556.
  259. J.E. Chung, M.C. Jeng, J.E. Moon, P.K. Ko, C. Hu, "Performance and Reliability Design Issues for Deep-Submicron MOSFET's," IEEE Trans. on Electron Devices, Vol. 38, No. 3, March 1991, pp. 545-554.
  260. J.E. Chung, J. Chen, P.K. Ko, M. Levi, C. Hu, "The Effects of Low-Angle Off-Axis Substrate Orientation on MOSFET Performance and Reliability," IEEE Trans. on Electron Devices, Vol. 38, No. 3, March 1991, pp. 627-633.
  261. H.J. Park, P.K. Ko, C. Hu, "A Charge Sheet Capacitance Model of Short Channel MOSFET's for SPICE," IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, Vol. 10, No. 3, March 1991, pp. 376-389.
  262. P. George, P.K. Ko, C. Hu, "The Influence of Substrate Compensation on Inter-Electrode Leakage and Back-Gating in GaAs MOSFETs," Solid State Electronics, Vol. 34, No. 3, March 1991, pp. 233-252.
  263. H.J. Park, P.K. Ko, C. Hu, "A Charge Conserving Non-Quasi-Static MOSFET Model for SPICE Transient Analysis," IEEE Computer Aided Design of Integrated Circuits and Systems, Vol. 10, No. 5, May 1991, pp. 629-642.
  264. Invited Paper, C. Hu, "IC Reliability Simulation," Proc. IEEE Custom Integrated Circuits Conf., San Diego, May 1991, pp. 4.1.1-4.1.4.
  265. R. Moazzami, C. Hu, "A High Quality Stacked Thermal/LPCVD Gate Oxide for ULSI," Proc. of Tech. Papers, 1991 International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 52-56.
  266. J.E. Moon, C. Galewski, T. Garfinkel, M. Wong, W.G. Oldham, P.K. Ko, C. Hu, "A Deep-Submicrometer Elevated Source/Drain LDD Structure Fabricated Using Hot-Wall Epitaxy," Proc. Tech. Papers, 1991 International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 117-121.
  267. P.M. Lee, T. Garfinkel, P.K. Ko, C. Hu, "Simulation of P- and N-MOSFET Hot Carrier Degradation in CMOS Circuits," Proc. of Tech. Papers, International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 191-195.
  268. H. Shin, R. Moazzami, C.C. King, C. Hu, T. Horiuchi, "Characterization of Thin Oxide Damage During Aluminum Etching and Photoresist Ashing Processes," Proc. of Tech. Papers, International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 210-213.
  269. E. Rosenbaum, R. Moazzami, C. Hu, "Implications of Waveform and Thickness Dependence of SiO2 Breakdown on Accelerated Testing," Proc. of Tech. Papers, International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 214-218.
  270. J. Chen, P.K. Ko, C. Hu, "Effects of the Field-Edge Transistor on SOI MOSFETs," Proc. of Tech. Papers, International Symp. on VLSI Technology, Systems, and Applications, Taipei, Taiwan, May 1991, pp. 219-223.
  271. S. Parke, J. Moon, P. Nee, J. Huang, C. Hu, P.K. Ko, "Gate-Induced Drain Leakage in LDD and Fully-Overlapped LDD MOSFETs," Symp. on VLSI Technology Digest of Tech. Papers, Oiso, Japan, May 1991, pp. 49-50.
  272. R. Moazzami, N. Akt, Y. Nissan-Cohen, W.H. Shepherd, M.P. Brassington, C. Hu, "Impact of polarization Relaxation on Ferroelectric Memory Performance," Symp. on VLSI Technology Digest of Tech. Papers Oiso, Japan, May 1991, pp. 61-62.
  273. V. Jain, D. Pramanik, K.Y. Chang, C. Hu, "Improved Sub-Micron CMOS Device Performance Due to Fluorine in CVD Tungsten Silicide," Symp. on VLSI Technology Digest of Tech. Papers, Oiso, Japan, May 1991, pp. 91-92.
  274. Invited Paper, P.M. Lee, P.K. Ko, C. Hu, "Circuit Reliability Simulation: An Overview," Proc. of International Workshop on VLSI Process and Device Modeling (VPAD), Oiso, Japan, May 1991, pp. 130-133.
  275. J.E. Chung, P.K. Ko, C. Hu, "A Model for Hot-Electron-Induced MOSFET Linear-Current Degradation Based on Mobility Reduction Due to Interface State Generation," IEEE Trans. on Electron Devices, Vol. 38, No. 6, June 1991, pp. 1362-1370.
  276. E. Rosenbaum, C. Hu, "High-Frequency Time-Dependent Breakdown of SiO2," IEEE Electron Device Letters, Vol. 12, No. 6, June 1991, pp. 267-269.
  277. P. Fang, K.K. Hung, P.K. Ko, C. Hu, "Hot-Electron Induced Traps Studied Through the Random Telegraph Noise," IEEE Electron Device Letters, Vol. 12, No. 6, June 1991, pp. 273-275.
  278. J. Tao, K.K. Young, C.A. Pico, N.W. Cheung, C. Hu, "Electromigration Characteristics of Al/W Via Contact Under Unidirectional and Bidirectional Current Conditions," Proc. 8th International IEEE VLSI Multilevel Interconnection Conf. (VMIC), June 1991, pp. 390-392.
  279. S. Chiang, R. Wang, T. Speers, J. McCollum, E. Hamdy, C. Hu, "Experimental Evidence for the Morphology of the Antifuse," Electronic Engineering , June, 1991, pp. 4548.
  280. H. Shin, C-C. King, T. Horiuchi, C. Hu, "Thin Oxide Charging Current During Plasma Etching of Aluminum," IEEE Electron Device Letters, Vol. 12, No. 8, August 1991, pp. 404-406.
  281. J. Chen, R. Solomon, T.Y. Chan, P.K. Ko, C. Hu, "A CV Technique for Measuring Thin SOI Film Thickness," IEEE Electron Device Letters, Vol. 12, No. 8, August 1991, pp. 453-455.
  282. Z.H. Liu, P. Nee, P.K. Ko, C. Hu, C. Sodini, B.J. Gross, T.P. Ma, Y.C. Cheng, "A Comparative Study of High-Field Endurance for Reoxidized-Nitrided Oxides and Fluorinated Oxides," Extended Abstracts of the International Conf. on Solid State Devices and Materials, Yokohama, Japan, August 1991, pp. 26-28.
  283. Best Paper Award, H. Shin, C-C. King, C. Hu, "Characterization of Thin Oxide Damage During Plasma Etching and Ashing Processes," American Vacuum Society Plasma Etch Symp., San Jose, Sept. 19, 1991, pp. 42-45.
  284. P.M. Lee, P.K. Ko, C. Hu, "A Simple Method to Predict Hot-Carrier Degradation in CMOS Inverter-Based Circuits," Proc. of IEICE Semiconductor Materials and Devices Workshop, Vol. 91, No. 244, September 26-27, 1991, pp. 57-63.
  285. J. Chen, K. Quader, P. Ko, C. Hu, "Hot Electron Gate Current and Degradation in P-Channel SOI MOSFETs," Proc. IEEE International SOI Conf., Vail, Colorado, October 1991, pp. 8-9.
  286. F. Assaderaghi, J. Chen, R. Solomon, T. Chan, P. Ko, C. Hu, "Time Dependence of Fully Depleted SOI MOSFET's Subthreshold Current," Proc. IEEE International SOI Conf., Vail, Colorado, October 1991, pp. 32-33.
  287. J. Chen, A. Lee, P. Fang, P. Ko, C. Hu, R. Solomon, T. Chan, "Interface Quality of SOI MOSFET's Reflected in Noise and Mobility," Proc. IEEE International SOI Conf., Vail, Colorado, October 1991, pp. 100-101.
  288. F. Assaderaghi, J. Chen, R. Solomon, T.Y. Chan, P.K. Ko, C. Hu, "Transient Behavior of Subthreshold Characteristics of Fully Depleted SOI MOSFET's," IEEE Electron Device Letters, Vol. 12, No. 10, October 1991, pp. 518-520.
  289. Keynote Address, C. Hu, "A Migration Path of Future Silicon MOSFET," 10th Symp. on Future Electron Devices (MITI, Japan), Tokyo, Japan, October 1991, pp. 185-191.
  290. H.P. Zappe, C. Hu, "A p-v-n Diode Model for CMOS Latchup," Solid-State Electronics, Vol. 34, No. 11, pp. 1275-1279, November 1991, pp. 1275-1279.
  291. E. Rosenbaum, R. Rofan, C. Hu, "Effect of Hot-Carrier Injection on n- and p-MOSFET Gate Oxide Integrity," IEEE Electron Device Letters, Vol. 12, No. 11, November 1991, pp. 599-601.
  292. R. Rofan, C. Hu, "Stress-Induced Oxide Leakage," IEEE Electron Devices Letters, Vol. 12, No. 11, November 1991, pp. 632-634.
  293. C. Hu, "MOS Devices," Semiconductor Technology University White Papers, Semiconductor Research Corporation, November 1991, pp. 167-190.
  294. C.J. Hegarty, J.C. Lee, C. Hu, ``Enhanced Conductivity and Breakdown of Oxides Grown on Heavily Implanted Substrates,'' Solid State Electronics , Vol. 34, No. 11, Nov. 1991, pp. 1207-1213.
  295. Z.H. Liu, J.H. Huang, J. Duster, P.K. Ko, C. Hu, M.C. Jeng, Y.C. Cheng, "Threshold Voltage Modeling for Deep-Submicrometer Conventional LDD MOSFETs at 300K and 85K," Proc. International Semiconductor Device Research Symp., Charlottesville, Virginia, December 4-6, 1991, pp. 411-414.
  296. J. Tao, K.K. Young, C.A. Pico. N.W. Cheung, C. Hu, "Electromigration Characteristics of Tungsten Plug Vias Under Pulse and Bidirectional Current Stressing," IEEE Electron Device Letters, Vol. 12, No. 12, December 1991, pp. 646-648.
  297. K.N. Quader, C. Li, R. Tu, E. Rosenbaum, P. Ko, C. Hu, "A New Approach for Simulation of Circuit Degradation Due to Hot-Electron Damage in NMOSFETs," Tech. Digest IEEE International Electron Devices Meeting, Washington, D.C., December 1991, pp. 337-340.
  298. J. Chen, F. Assaderaghi, H. Wann, P. Ko, C. Hu, "An Accurate Model of Thin Film SOI MOSFET Breakdown Voltage," Tech. Digest IEEE International Electron Devices Meeting, Washington, D.C., December 1991, pp. 671-674.
  299. Best Student Paper, E. Rosenbaum, Z. Liu, C. Hu, "The Effects of Oxide Stress Waveform on MOSFET Performance," Tech. Digest IEEE International Electron Devices Meeting, Washington, D.C., December 1991, pp. 719-722.
  300. Z.H. Liu, E. Rosenbaum, P. Ko, C. Hu, Y.C. Cheng, C.G. Sodini, B.J. Gross, T.P. Ma, "A Comparative Study of the Effects of Dynamic Stressing on High-Field Endurance and Stability of Reoxidized-Nitrided, Fluorinated and Conventional Oxides," IEEE International Electron Devices Meeting, Technical Digest, Washington, D.C., December 1991, pp. 723-726.
  301. E.M.A. Ravanelli, C. Hu, "Device-Circuit Mixed Simulation of VDMOS Charge Transients," Solid State Electronics, Vol. 34, No. 12, December 1991, pp. 1353-1360.
  302. Z.H. Liu, P. Nee, P.K. Ko, C. Hu, C.G. Sodini, B.J. Gross, T-P. Ma, Y.C. Cheng, "Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown for Reoxidized-Nitrided and Florinated Oxides," IEEE Electron Device Letters, Vol. 13, No. 1, January 1992, pp. 41-43.
  303. C. Hu, "IC Reliability Simulation," IEEE Journal Solid State Circuits, Vol. 27, No. 3, March 1992, pp. 241-246.
  304. J. Tao, K.K. Young, N.W. Cheung, C. Hu, "Comparison of Electromigration Reliability of Tungsten and Aluminum Vias Under DC and Time-Varying Current Stressing," Proc. IEEE International Reliability Physics Symp., March 1992, pp. 338-343.
  305. C. Jiang, C. Hu, C.H. Chen, P.N. Tseng, "Impact of Inter-Metal-Oxide Deposition Condition on NMOS and PMOS Transistor Hot Carrier Effect," Proc. IEEE International Reliability Physics Symp., March 1992, pp. 122-126.
  306. K. Quader, P. Fang, P.K. Ko, C. Hu, "Simulation of Hot-Carrier-Induced CMOS Circuit Degradation," Proc. IEEE International Reliability Physics Symp., March 1992, pp. 16-23.
  307. V. Jain, D. Pramanik, S.R. Nariani, C. Hu, ``Internal Passivation for Suppression of Device Instabilities Induced by Backend Processes,'' Proc. IEEE International Reliability Physics Symp., March 1992, pp. 11-15.
  308. H. Shin, C.C. King, C. Hu, "Thin Oxide Damage by Plasma Etching and Ashing Process," Proc. IEEE International Reliability Physics Symp., March 1992, 37-41.
  309. Tutorial, R. Moazammi, C. Hu, "Modeling and Characterizing SiO 2 Reliability," Tutorial Notes, International Reliability Physics Symp. , March 1992, p. 5.1.
  310. Invited Paper, C. Hu, "Simulating Hot-Carrier Effects on Circuit Performance," Semiconductor Science and Technology, Adam Hilger Publisher Vol. 7, pp. B555-B558, March 1992.
  311. C. Hu, "The Berkeley Reliability Simulator BERT: An IC Reliability Simulator," Microelectronics Journal, Vol. 233, No. 2. April, 1992, pp. 97-102.
  312. K.N. Quader, P.K. Ko, C. Hu, P. Fang, J.T. Yue, "Simulations of CMOS Circuit Degradation Due to Hot-Carrier Effects," Reliability Physics Symposium, 30th Annual Proceedings, pp. 16-23, April 1992.
  313. J. Chen, R. Solomon, T.Y. Chan, P.K. Ko, C. Hu, ``Parasitic Capacitances of SOI MOSFET's,'' Proc. of the Fifth International Symp. on Silicon-on-Insulator Technology and Devices, Electrochemical Society Proc. Vol. 92-13, May 1992, pp. 89-90.
  314. S.R. Nariani, K.Y. Chang, M. Biegel, C. Hu, "An ASIC-Compatible EEPROM Technology," Proc. of the IEEE Custom Integrated Circuits Conf., Boston, MA., May 1992, pp. 9.5.1- 9.5.4.
  315. Y. Fong, G.C. Liang, T. Van Duzer, C. Hu, "Channel Width Effect on MOSFET Breakdown," IEEE Transactions on Electron Devices, Vol.39, No.5, pp. 1265-1267, May, 1992.
  316. K. Schuegraf, C. King, C. Hu, "Ultra-Thin Silicon Dioxide Leakage Current and Scaling Limit,'' Proc. Symp. on VLSI Technology Digest , June 1992, pp. 18-19.
  317. S. Chiang, R. Wang, T. Speers, J. McCollum, E. Hamdy, C. Hu, "Conductive Channel in ONO Formed by Controlled Dielectric Breakdown," Proc. Symp. on VLSI Technology Digest , June 1992, pp. 20-21.
  318. C. Hu, "Built-in Reliability," Nikkei Microdevices (Japanese), June 1992, pp. 91-97.
  319. S.A. Parke, E. Moon, H-J. Wenn, P.K. Ko, C. Hu, "Design for Suppression of Gate-Induced Drain Leakage in LDD MOSFET's Using a Qusasi-Two Dimensional Analytical Model," IEEE Trans. Electron Devices, Vol. 39, No. 7, July 1992, pp. 1694-1703.
  320. Z. Liu, H.J. Wann, P.K. Ko, C. Hu, Y.C. Cheung, "Effects of N2O Anneal and Reoxidation on Thermal Oxide Characteristics," IEEE Electron Device Letters, Vol. 13, No. 8, Aug. 1992, pp. 402-404.
  321. J. Tao, N.W. Cheung, C. Hu, H.K. Kang, S.S. Wong, "Electromigration Performance of Electroless Plated Copper/Pd-Silicide Metallization," IEEE Electron Device Letters, Vol. 13, No. 8, Aug. 1992, pp. 433-435.
  322. R. Moazzami, C. Hu, W.H. Shepherd, "Electrical Characteristics of Ferroelectric PZT Thin Films for DRAM Applications," IEEE Trans. Electron Devices, Vol. 39, No. 9, Sept. 1992, pp. 2044-2049.
  323. Keynote Address, C. Hu, "Future Evolution of MOSFETs," American Vacuum Society Plasma Etch 1992 Symp., Santa Clara, CA., Sept. 17, 1992, pp. 1-4.
  324. K. Noguchi, H. Shin, C. Hu, "Gate Oxide Damage by Plasma Oxide Deposition and Via Etch," American Vacuum Society Plasma Etch 1992 Symp., Santa Clara, CA., Sept. 17, 1992, pp. 18-19.
  325. Y. Wei, Y. Loh, C. Wang, C. Hu, "MOSFET Drain Engineering for ESD Performance," Proc. Electrical Overstress/Electrostatic Discharge Symp., Dallas, TX., Sept. 16-18, 1992, pp. 143-148.
  326. Invited Paper, C. Hu, N.W. Cheung, J. Tao, B.K. Liew, "Modeling Electromigration Lifetime Under Pulsed and AC Current Stress," Proc. SPIE , San Jose, CA., Vol. 1805, Submicrometer Metallization, Sept. 1992, pp. 244-250.
  327. J. Chen, R. Solomon, T.Y. Chan, P.K. Ko, C. Hu, "Threshold Voltage and C-V Characteristics of SOI MOSFET's Related to Si Film Thickness Variation on SIMOX Wafers," IEEE Trans. on Electron Devices, Vol. 39, No. 19, Oct. 1992, pp. 2346-2353.
  328. J. Chen, F. Assaderaghi, P.K. Ko, C. Hu, "The Enhancement of Gate-Induced-Drain-Leakage (GIDL) Current in SOI MOSFET and Its Impact on SOI Device Scaling," Proc. IEEE International SOI Conf., Fort Lauderdale, FL., Oct. 6-8, 1992, pp. 84-85.
  329. F. Assaderaghi, J. Chen, P. Ko, C. Hu, "Measurement of Electron and Hole Saturation Velocities in Silicon Inversion Layers Using SOI MOSFETs," Proc. IEEE International SOI Conf., Fort Lauderdale, FL., Oct. 6-8, 1992, pp. 112-113.
  330. S.A. Parke, C. Hu, P.K. Ko, "Complimentary High Performance Lateral BJT's in a SIMOX C-BiCMOS Technology," Proc. IEEE International SOI Conf., Fort Lauderdale, FL., Oct. 6-8, 1992, pp. 142-143.
  331. H.J. Park, P.K. Ko, C. Hu, "A Non-Quasistatic MOSFET Model for SPICE-AC Analysis," IEEE Trans. on Computer-Aided Design of Integrated Circuits and Systems, Vol. 11, No. 10, October 1992. pp. 1247-1257.
  332. E. Nowak, E. Johnson, M. Hong, Y. Han, C. Wang, Y.T. Loh, C. Hu, "Optimization of Punchthrough Effects for Deep Submicron N-Channel MOSFETs," Proc. 3rd International Conf. Solid State and Integrated Circuit Technology, Beijing, CHINA, Oct. 1992, pp. 76-79.
  333. Y. Wei, L. Ding, C. Wang, C. Hu, "Performance of 3V CMOS Circuit," Proc. 3rd International Conf. Solid State and Integrated Circuit Technology , Beijing, CHINA, Oct. 1992, pp. 324-326.
  334. H. Shin, C. Hu, "Plasma-Etching Induced Damage in Thin Oxide," Proc. IEEE/SEMI Adv. Semiconductor Manufacturing Conf. , Minneapolis, MN., Oct. 1992, pp. 79-83.
  335. Z. Liu, H-J. Wann, P.K. Ko, Y.C. Cheng, C. Hu, "Improvement of Charge Trapping Characteristics of N2O-Annealed Thin Oxides," IEEE Electron Device Letters , Vol. 13, No. 10, October 1992, pp. 519-521.
  336. Plenary Session Address, C. Hu, "Silicon MOSFETs in the Next Twenty Years," Proc. International. Electron Devices and Materials Symp. , Taipei, Taiwan, November 1992, pp. 4-6.
  337. B-K. Liew, P. Fang, N.W. Cheung, C. Hu, "Circuit Reliability Simulator for Interconnect, Via, And Contact Electromigration," IEEE Trans. on Electron Devices, Vol. 39, No. 11, November 1992, pp. 2472-2479.
  338. J. Chen, F. Assaderaghi, P.K. Ko, C. Hu, "The Enhancement of Gate-Induced-Drain-Leakage (GIDL) Current in Short-Channel SOI MOSFET and It's Application in Measuring Lateral Bipolar Current Gain," IEEE Trans. Device Letter, Vol. 13, No. 11, November 1992, pp. 572-574.
  339. H. Shin, C. Hu, "Dependence of Plasma-Induced Oxide Charging Current on Al Antenna Geometry," IEEE Electron Device Letters, Vol. 13, No. 12, Dec. 1992, pp. 600-602.
  340. J. Chen, S. Parke, J. King, F. Assaderaghi, P.K. Ko, C. Hu, "High Speed SOI Technology with 12ps/18ps Gate Delay Operating at 5V/1.5V," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 35-38.
  341. R. Moazzami, C. Hu, "Stress-Induced Current in Thin Silicon Dioxide Films," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 139-142.
  342. H-J. Wann, P.K. Ko, C. Hu, "Gate-Induced Band-to-Band Tunneling Leakage Current in LDD MOSFET's," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 147-150.
  343. S. Parke, F. Assaderaghi, J. Chen, J. King, P.K. Ko, C. Hu, "A Versatile SOI BiCMOS Technology with Complementary Lateral BJT's," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 453-456.
  344. E.R. Minami, K.N. Quader, P.K. Ko, C. Hu, "Prediction of Hot-Carrier Degradation in Digital CMOS VLSI by Timing Simulator," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 539-542.
  345. C.C. Li, K.N. Quader, E.R. Minami, C. Hu, P.K. Ko, "A New Bi-Directional PMOSFET Hot-Carrier Degradation Model for Circuit Reliability Simulation," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 547-550.
  346. J.H. Huang, Z.H. Liu, M.C. Jeng, P.K. Ko, C. Hu, "A Physical Model for MOSFET Output Resistance," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 569-572.
  347. Invited Paper, C. Hu, "Interconnect Devices for Field Programmable Gate Array," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 591-594.
  348. S. Chiang, R. Farouhi, W. Chen, F. Hawley, J. McCollum, E. Hamdy, C. Hu, "Antifuse Structure Comparison for Field Programmable Gate Arrays," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 611-614.
  349. Z.H. Liu, J.T. Krick, H.J. Wann, P.K. Ko, C. Hu, Y.C. Cheng, "The Effects of Furnace N2O Annealing on MOSFETs," Tech. Digest International Electron Devices Meeting, San Francisco, CA., Dec. 1992, pp. 625-628.
  350. M.H. Kiang, J. Tao, W. Namjoong, C. Hu, M. Lieberman and N.W. Cheung, H-K Kang, S. Wong, "Planarized Copper Interconnects by Selective Electroless Plating," Proc. Materials Research Society Symp. , Boston, MA., Vol. 265, Materials Reliability in Microelectronics II, pp. 187-197, 1992.
  351. Z.H. Liu, C. Hu, J-H. Huang, T-Y. Chan, M-C. Jeng, P.K. Ko, Y.C. Cheng, "Threshold Voltage Model for Deep-Submicrometer MOSFET's," IEEE Trans. on Electron Devices, Vol. 40, No. 1, January 1993, pp. 86-95.
  352. S.A. Parke, C. Hu, P. Ko, "A High Performance Lateral Bipolar Transistor Fabricated on SIMOX," IEEE Electron Device Letters, Vol. 14, No. 1, January 1993, pp. 33-35.
  353. C. Hu, "Circuit Reliability Simulation," Proc. IEEE Symp. on VLSI Technology CAD, January 1993, Santa Clara, CA., pp. 430-500.
  354. P.K. Ko, J.H. Huang, Z.H. Liu, C. Hu, "BSIM3 for Analog and Digital Circuit Simulation," IEEE Symp. on VLSI Technology CAD , January 1993, pp. 400-429.
  355. R. Moazammi, C. Hu, "A High-Quality Stacked Thermal/ LPCVD Gate Oxide Technology for ULSI," IEEE Electron Device Letters, Vol. 14, No. 2, February 1993, pp. 72-73.
  356. H. Shin, K. Noguchi, X.Y. Qian, N. Jhan, G. Hills, C. Hu, "Spatial Distribution of Thin Oxide Charging in Reactive Ion Etcher and MERIE Etcher," IEEE Electron Device Letters, Vol. 14, No. 2, February 1993, pp. 88-90.
  357. K.F. Schuegraf, C. Hu, "Hole Injection Oxide Breakdown Model for Very Low Voltage Lifetime Extrapolation," Proc. IEEE International Reliability Physics Symp., Atlanta, GA., March 1993, pp. 7-12.
  358. C. Jiang, E. Johnson, J.J. Shaw, C. Hu, "AC Hot-Carrier Degradation in a Voltage Controlled Oscillator," Proc. IEEE International Reliability Physics Symp., Atlanta, GA., March 1993, pp. 53-56.
  359. H. Shin, K. Noguchi, C. Hu, "Thickness and Other Effects on Oxide and Interface Damage by Plasma Processing," Proc. IEEE International Reliability Physics Symp., Atlanta, GA., March 1993, pp. 272-279.
  360. Tutorial, C. Hu, "Simulating Hot Electron Effects on Circuit Performance," Tutorial Notes, IEEE International Reliability Physics Symp., March 1993, pp. 1C1-1C34.
  361. C. Hu, H. Shin, "Characterization and Modeling of Thin Oxide Damage by Plasma Etch," Sematech Plasma Damage Symp., Austin, Texas, April 1993, pp. W 3.1-27.
  362. J.C. Chen, Z. Liu, J.T. Krick, P.K. Ko, C. Hu, "Degradation of N2O Annealed MOSFET Characteristics in Response to Dynamic Oxide Stressing," IEEE Electron Device Letters, Vol. 14, No. 15, May 1993, pp. 225-227.
  363. S.A. Parke, C. Hu, P.K. Ko, "Bipolar -FET Hybride-Mode Operation of Quarter-Micrometer SOI MOSFET's," IEEE Electron Device Letters, Vol. 14, No. 15, May 1993, pp. 234-236.
  364. J. Tao, N.W. Cheung, C. Hu, "Electromigration Characteristics of Copper Interconnects," IEEE Electron Device Letters, Vol. 14, No. 15, May 1993, pp. 249-251.
  365. J.H. Huang, G.B. Zhang, Z.H. Liu, J. Duster, S.J. Wann, P. Ko, C. Hu, "Temperature Dependence of MOSFET Substrate Current," IEEE Electron Device Letters, Vol. 14, No. 15, May 1993, pp. 268-271.
  366. Y. Wei, Y. Loh, C. Wang, C. Hu, "I/O Device Drain Engineering for a 5V 0.6mm CMOS Technology," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 6-10.
  367. K.F. Schuegraf, C.C. King, C. Hu, "Impact of Polysilicon Depletion in Thin Oxide CMOS Technology," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 86-90.
  368. H-J. Wann, P.K. Ko, C. Hu, "A Channel Field Model of SOI MOSFET," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 133-37.
  369. K.N. Quader, W.Y. Chan, P.K. Ko, C. Hu, "Hot-Carrier Reliability of Mixed Mode Analog/Digital Technologies," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 168-172.
  370. S. Parke, F. Assaderaghi, C. Hu, P.K. Ko, "Nearly-Fully-Depleted (NFD) 0.15 mm SOI CMOS in a CBiCMOS Technology," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 227-231.
  371. F. Assaderaghi, K. Hui, S. Parke, J. Duster, P.K. Ko, C. Hu, "Study of Current Drive in Deep Sub-Micrometer SOI PMOSFET's," Proc. of Tech. Papers , IEEE International Symp. on VLSI Technology, Systems and Applications, Taipei, Taiwan, May 12-14, 1993, pp. 232-236.
  372. J.H. Huang, Z. H. Liu, M.C. Jeng, P. K. Ko, C. Hu, "A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation," Proc. IEEE Custom Integrated Circuit Conf., San Diego, CA., May 1993, pp. 14.2.1-14.2.4.
  373. K.N. Quader, E.R. Minami, W.J. Huang, P.K. Ko, C. Hu, "Hot-Carrier Reliability Design Guidelines for CMOS Logic Circuits," Proc. IEEE Custom Integrated Circuit Conf., San Diego, CA., May 1993, pp. 30.7.1-30.7.4.
  374. Tutorial, C. Hu, "Design for Reliability," Educational Session Notes, IEEE Custom Integrated Circuit Conf., San Diego, CA., May 1993, p. 2.1.
  375. K.N. Quader, P.K. Ko, C. Hu, "A New Insight into Correlation between DC and AC Hot Carrier Degradation of MOS Devices," IEEE Symp. on VLSI Technology, Kyoto, JAPAN, May 1993, pp. 13-14.
  376. K. Schuegraf, C. Hu, "Oxide Breakdown Model for Very Low Voltages," IEEE Symp. on VLSI Technology, Kyoto, JAPAN, May 1993, pp. 43-44.
  377. H.J. Wann, S. A. Parke, P.K. Ko, C. Hu, "Suppressing Flash EEPROM Erase Leakage with Negative Gate Bias and LDD Erase Junction," IEEE Symp. on VLSI Technology, Kyoto, JAPAN, May 1993, pp. 81-82.
  378. Invited Paper, C. Hu, "Towards ULSI Reliability by Design," Proc. of the 4th International Symp. on Ultra Large Scale Integration Science and Technology: Electrochemical Society (ECS), May 1993, Vol. 93-23, pp. 158-162.
  379. H. Shin, C. Hu, "Monitoring Plasma-Induced Damage to Thin Oxide," IEEE Trans. on Semiconductor Manufacturing, Vol. 6, No. 2, May 1993, pp. 96-102.
  380. Invited Paper, C. Hu, "Future CMOS Scaling and Reliability," Proc. of the IEEE, Vol. 81, No. 5, May 1993, pp. 682-689.
  381. V. Jain, D. Pramenik, C. Hu, "Novel Technique for Estimating Charge and Thickness Variations in Dielectrics Used for Planarization," Proc. of VLSI Multi-Level Interconnect, San Jose, CA, June 1993, pp. 535-538.
  382. F. Assaderaghi, S. Parke, J. King, J. Chen, P.K. Ko, C. Hu, "High-Performance Sub-Quarter-Micrometer PMOSFET's on SOI," IEEE Electron Device Letters, Vol. 14, No. 6, June 1993, pp. 298-300.
  383. J. Tao, K.K. Young, N.W. Cheung, C. Hu, "Electromigration Reliability of Tungsten and Aluminum Vias and Improvements under AC Current Stress," IEEE Trans. on Electron Devices, Vol. 40 No. 8, August 1993, pp. 1398-1405.
  384. H. Shin, N. Jha, X-Y. Qian, G.W. Hills, C. Hu, "Plasma Etching Charge-Up Damage to Thin Oxides," Solid State Technology, August 1993, pp. 29-36.
  385. Invited Paper, C. Hu, "Silicon-on-Insulator for High Speed ULSI," Extended Abstracts of the International Conf. on Solid State Devices and Materials, Chiba, Japan, August 1993, pp. 137-139.
  386. E.D. Nowak, C. Hu, "A Simple Method for Analyzing Bulk Versus Surface Punchthrough Current," Extended Abstracts of the International Conf. on Solid State Devices and Materials, Chiba, Japan, August 1993, pp. 488-490.
  387. J.S. Duster, Z.H. Liu, P.K. Ko, C. Hu, "Temperature Effects of the Inversion Layer Electron and Hole Mobility of MOSFETs from 85K to 500K," Extended Abstracts of the International Conf. on Solid State Devices and Materials, Chiba, Japan, August 1993, pp. 835-837.
  388. G.W. Hills, N. Jha, X.Y. Qian, H. Shin, K. Noguchi, and C. Hu, "Charging Studies in a Magnetically Enhanced Plasmas," Proc. 11th International Symposium on Plasma Chemistry, August 1993.
  389. H. Shin, C. Hu, "Plasma Etching Antenna Effect on Oxide-Silicon Interface Reliability," Solid State Electronics, Vol. 36, No. 9, September 1993, pp. 835-837.
  390. Y. Wei, Y. Loh, C. Wang, C. Hu, "Effect of Substrate Contact on ESD Failure of Advanced CMOS Integrated Circuits," 15th Annual Electrical Overstress/Electrostatic Discharge Symp., Lake Buena Vista, FL, September 1993, pp. 221 - 224.
  391. C. Hu, "Building-in Reliability," New ASIC Design Techniques 94 (Japanese), Nikkei Business Publications, Inc., Tokyo, Japan, 1993, pp. 145-148.
  392. F. Assaderaghi, C. Hu, P.K. Ko, J. Duster, D. Sinitsky, J. Bokor, "Direct Observation of Velocity Overshoot in Silicon Inversion Layers," TECHCON Extended Abstracts, September 1993, pp. 265-267.
  393. E.R. Minami, K.N. Quader, C. Hu, C. Li, E. Rosenbaum, P.K. Ko, "New Approaches to Digital MOS Circuit Reliability Simulation," TECHCON Extended Abstracts, September 1993, pp. 268-270.
  394. J.H. Huang, P.K. Ko, Z.H. Liu, C. Hu, M.C. Jeng, "A Robust Physical and Predictive Model for Deep-Submicrometer MOS Circuit Simulation," TECHCON Extended Abstracts, September 1993, pp. 355-357.
  395. C.K. Szeto, P.K. Ko, C. Hu, "Non-Quasistatic Modeling of the BJT Quasi-neutral base," IEEE Bipolar Circuits and Tech. Meeting, Sept. 1993, pp. 197-200.
  396. N. Jha, H. Shin, G.W. Hills, X.Y. Qian, and C. Hu, "Factors Affecting Charge-up in a Magnetically Enhanced RIE Polysilicon Etcher," Proc. Electrochemical Society, Vol. 93-12, September 1993.
  397. F. Assaderaghi, P.K. Ko, C. Hu, "Observation of Velocity Overshoot in Silicon Inversion Layer," IEEE Electron Device Letters, Vol. 14, No. 10, October 1993, pp. 484-486.
  398. H. Wann, J. King, J. Chen, P.K. Ko, C. Hu, "Hot-Carrier Currents of SOI MOSFETs," Proc. IEEE International SOI Conf. , October 1993, pp. 118-119.
  399. F. Assaderaghi, P.K. Ko, C. Hu, "Room Temperature Observation of Velocity Overshoot in Silicon Inversion Layers," Proc. IEEE International SOI Conf., October 1993, pp. 116-117.
  400. M. Chan, F. Assaderaghi, S.A. Parke, S.S. Yuen, P.K. Ko, C. Hu, "Recess Channel Structure for Reducing Source/Drain Series Resistance in Ultra Thin SOI MOSFETs," 1993 IEEE International SOI Conference Proceedings, October 1993, pp. 172-173.
  401. R.H. Tu, E. Rosenbaum, W.Y.